Ferromagnetic tunnel magnetoresistive devices and magnetic head
First Claim
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1. A ferromagnetic tunnel magnetoresistive element, comprising:
- a first ferromagnetic layer;
a first insulating barrier layer formed on the first ferromagnetic layer;
a second ferromagnetic layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the second ferromagnetic layer; and
a third ferromagnetic layer formed on the second insulating barrier layer, wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic layer and the third ferromagnetic layer, and a terminal for applying a second bias voltage between the second ferromagnetic layer and the first or third ferromagnetic layer.
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Abstract
The present invention provides a ferromagnetic tunnel magnetoresistive film which is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage.
In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage V1, applied to one of the tunnel junctions. By employing half-metallic ferromagnets 11 and 12 in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.
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Citations
32 Claims
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1. A ferromagnetic tunnel magnetoresistive element, comprising:
- a first ferromagnetic layer;
a first insulating barrier layer formed on the first ferromagnetic layer;
a second ferromagnetic layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the second ferromagnetic layer; and
a third ferromagnetic layer formed on the second insulating barrier layer,wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic layer and the third ferromagnetic layer, and a terminal for applying a second bias voltage between the second ferromagnetic layer and the first or third ferromagnetic layer. - View Dependent Claims (2, 3, 4, 5)
- a first ferromagnetic layer;
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6. A magnetic head provided with a magnetoresistive element comprising:
- a first ferromagnetic layer;
a first insulating barrier layer formed on the first ferromagnetic layer;
a second ferromagnetic layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the second ferromagnetic layer; and
a third ferromagnetic layer formed on the second insulating barrier layer,wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic layer and the third ferromagnetic layer, and a terminal for applying a second bias voltage between the second ferromagnetic layer and the first or third ferromagnetic layer. - View Dependent Claims (7, 8, 9, 10)
- a first ferromagnetic layer;
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11. A ferromagnetic tunnel magnetoresistive element, comprising:
- a first half-metallic ferromagnetic layer;
a first insulating barrier layer formed on the first half-metallic ferromagnetic layer;
a ferromagnetic metal layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the ferromagnetic metal layer; and
a second half-metallic ferromagnetic layer formed on the second insulating barrier layer,wherein the element further comprises a terminal for applying a first bias voltage between the first half-metallic ferromagnetic layer and the second half-metallic ferromagnetic layer, and a terminal for applying a second bias voltage between the ferromagnetic metal layer and the first or second half-metallic ferromagnetic layer. - View Dependent Claims (12, 13, 15, 16, 17, 19, 21)
- a first half-metallic ferromagnetic layer;
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14. A ferromagnetic tunnel magnetoresistive element, comprising:
- a first ferromagnetic metal layer;
a first insulating barrier layer formed on the first ferromagnetic metal layer;
a half-metallic ferromagnetic layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the half-metallic ferromagnetic layer; and
a second ferromagnetic metal layer formed on the second insulating barrier layer,wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and a terminal for applying a second bias voltage between the half-metallic ferromagnetic layer and the first or second ferromagnetic metal layer.
- a first ferromagnetic metal layer;
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18. A ferromagnetic tunnel magnetoresistive element, comprising:
- a first antiferromagnetic layer;
a half-metallic ferromagnetic layer formed on the first antiferromagnetic layer;
a first insulating barrier layer formed on the first half-metallic ferromagnetic layer;
a first ferromagnetic metal layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the first ferromagnetic metal layer;
a second ferromagnetic metal layer formed on the second insulating barrier layer; and
a second antiferromagnetic layer formed on the second ferromagnetic metal layer,wherein the element further comprises a terminal for applying a first bias voltage between the half-metallic ferromagnetic layer and the second ferromagnetic metal layer, and a terminal for applying a second bias voltage between the first ferromagnetic metal layer and the half-metallic ferromagnetic layer or the second ferromagnetic metal layer.
- a first antiferromagnetic layer;
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20. A ferromagnetic tunnel magnetoresistive element, comprising:
- a first antiferromagnetic layer;
a first ferromagnetic metal layer formed on the first antiferromagnetic layer;
a first insulating barrier layer formed on the first ferromagnetic metal layer;
a second ferromagnetic metal layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the second ferromagnetic metal layer;
a third ferromagnetic metal layer formed on the second insulating barrier layer; and
a second antiferromagnetic layer formed on the third ferromagnetic metal layer,wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic metal layer and the third ferromagnetic metal layer, and a terminal for applying a second bias voltage between the second ferromagnetic metal layer and the first or third ferromagnetic metal layer.
- a first antiferromagnetic layer;
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22. A magnetic head provided with a magnetoresistive element comprising:
- a first half-metallic ferromagnetic layer;
a first insulating barrier layer formed on the first half-metallic ferromagnetic layer;
a ferromagnetic metal layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the ferromagnetic metal layer; and
a second half-metallic ferromagnetic layer formed on the second insulating barrier layer,wherein the element further comprises a terminal for applying a first bias voltage between the first and second half-metallic ferromagnetic layers, and a terminal for applying a second bias voltage between the ferromagnetic metal layer and the first or second half-metallic ferromagnetic layer. - View Dependent Claims (23, 24, 26, 27, 28, 30, 32)
- a first half-metallic ferromagnetic layer;
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25. A magnetic head provided with a magnetoresistive element comprising:
- a first ferromagnetic metal layer;
a first insulating barrier layer formed on the first ferromagnetic metal layer;
a half-metallic ferromagnetic layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the half-metallic ferromagnetic layer; and
a second ferromagnetic layer formed on the second insulating barrier layer,wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and a terminal for applying a second bias voltage between the half-metallic ferromagnetic layer and the first or second ferromagnetic metal layer.
- a first ferromagnetic metal layer;
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29. A magnetic head provided with a magnetoresistive element comprising:
- a first antiferromagnetic layer;
a half-metallic ferromagnetic layer formed on the first antiferromagnetic layer;
a first insulating barrier layer formed on the first half-metallic ferromagnetic layer;
a first ferromagnetic metal layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the first ferromagnetic metal layer;
a second ferromagnetic metal layer formed on the second insulating barrier layer; and
a second antiferromagnetic layer formed on the second ferromagnetic metal layer,wherein the element further comprises a terminal for applying a first bias voltage between the half-metallic ferromagnetic layer and the second ferromagnetic metal layer, and a terminal for applying a second bias voltage between the first ferromagnetic metal layer and the half-metallic ferromagnetic layer or the second ferromagnetic metal layer.
- a first antiferromagnetic layer;
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31. A magnetic head provided with a magnetoresistive element comprising:
- a first antiferromagnetic layer;
a first ferromagnetic metal layer formed on the first antiferromagnetic layer;
a first insulating barrier layer formed on the first ferromagnetic metal layer;
a second ferromagnetic metal layer formed on the first insulating barrier layer;
a second insulating barrier layer formed on the second ferromagnetic metal layer;
a third ferromagnetic metal layer formed on the second insulating barrier layer; and
a second antiferromagnetic layer formed on the third ferromagnetic metal layer,wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic metal layer and the third ferromagnetic metal layer, and a terminal for applying a second bias voltage between the second ferromagnetic metal layer and the first or third ferromagnetic metal layer.
- a first antiferromagnetic layer;
Specification