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Ferromagnetic tunnel magnetoresistive devices and magnetic head

  • US 20020085319A1
  • Filed: 08/31/2001
  • Published: 07/04/2002
  • Est. Priority Date: 12/26/2000
  • Status: Active Grant
First Claim
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1. A ferromagnetic tunnel magnetoresistive element, comprising:

  • a first ferromagnetic layer;

    a first insulating barrier layer formed on the first ferromagnetic layer;

    a second ferromagnetic layer formed on the first insulating barrier layer;

    a second insulating barrier layer formed on the second ferromagnetic layer; and

    a third ferromagnetic layer formed on the second insulating barrier layer, wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic layer and the third ferromagnetic layer, and a terminal for applying a second bias voltage between the second ferromagnetic layer and the first or third ferromagnetic layer.

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