Method for the manufacture of micro-mechanical components

• US 20020086455A1
• Filed: 12/20/2001
• Published: 07/04/2002
• Est. Priority Date: 12/21/2000
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Franosch, Martin, Wittmann, Reinhard, Pusch, Catharina
• Granted Patent: US 6,605,487 B2
• Time in Patent Office: Days
• US Class Current: 438/51
• CPC Class Codes: B81C 1/00047 Cavities
• CPC Class Codes: B81C 1/00476 removing a sacrificial layer B81C1/00912 takes precedence
• CPC Class Codes: B81C 2201/016 Passivation

Abstract

A method for the manufacture of micro-mechanical components from a stack of layers having at least a substrate, a sacrificial layer and a layer which is to be undercut includes forming at least one etch hole in the layer, which is to be undercut, and providing at least one passivation layer for controlling a selective depositing of a cover material which closes each of the etch holes after a step of etching the sacrificial layer. The passivation layer makes it possible that the undercut layer elements do not become excessively thick or grow together with the substrate due to the deposition of the cover material.

Claims

1. A method for the manufacture of micro-mechanical components with at least one undercut layer element, said method comprising the steps of providing a layer stack that has a sacrificial layer, applied on a substrate and a first layer, which is to be undercut, applied on the sacrificial layer;

forming at least one etch hole in the first layer;

isotropically etching the sacrificial layer so that the at least one undercut layer element is created;

creating a passivation layer on the surface region between the at least one undercut layer element and the substrate; and

selectively depositing a cover material relative to the passivation layer so that each etch hole is closed.

2. A method according to claim 1, wherein the passivation layer is composed of a material selected from a group consisting of silicon oxide and silicon nitride.

3. A method according to claim 1, which includes the step of removing the passivation layer from an upper side of the at least one undercut layer element before the step of depositing the cover material.

4. A method according to claim 3, wherein the step of removing the passivation layer on the upper surface of the at least one undercut layer element comprises isotropic etching.

5. A method according to claim 4, wherein the step of forming at least one etch hole forms an etch hole with a slanting funnel-shaped sidewall.

6. A method according to claim 4, wherein the step of isotropically etching has an etch rate on the surface of the substrate which is more than 10% below an etch rate on the upper surface of the at least one undercut layer element.

7. A method according to claim 3, wherein the step of depositing the cover material deposits a cover material which is the same as the material forming the first layer.

8. A method according to claim 1, wherein the substrate is composed of a semiconductor material.

9. A method according to claim 1, wherein the sacrificial layer is selected from a group consisting of silicon oxide, undoped polysilicon, silicon nitride and polygermanium.

10. A method according to claim 1, wherein the first layer is composed of a material selected from a group consisting of silicon, polysilicon, epitaxially grown silicon, silicon nitride, silicon oxide and silicon carbide.

11. A method according to claim 1, wherein the step of forming at least one etch hole includes structuring the first layer.

13. A method according to claim 12, wherein the step of providing a stack provides a stack which includes a second passivation layer applied on the sacrificial layer between the sacrificial layer and the first layer and the step of forming at least one etch hole forms an etch hole through both the second passivation layer and the first layer.

14. A method according to claim 13, which includes applying a third passivation layer on the first layer prior to the step of selectively depositing the cover material, so that the cover material is deposited selectively relative to the third passivation layer.

15. A method according to claim 13, wherein the second passivation layer is composed of a material selected from a group consisting of silicon nitride and silicon oxide.

16. A method according to claim 13, wherein the first and second passivation layers have a layer thickness less than 1000 nm.

17. A method according to claim 16, wherein the first and second passivation layers have a layer thickness of less than 50 nm.

18. A method according to claim 12, wherein the first passivation layer is a material selected from a group consisting of silicon nitride, silicon oxide, polysilicon and monocrystalline silicon.

20. A method according to claim 19, which includes, prior to the step of selectively depositing the cover material, forming another passivation layer on an upper surface of the first layer, so that the cover material is deposited selectively relative to the two passivation layers.

21. A method according to claim 19, wherein the passivation layer is a material selected from a group consisting of silicon nitride and silicon oxide.

12. A method for manufacturing micro-mechanical components with at least one undercut layer element, said method comprising the steps of providing a layer stack having a substrate, with a first passivation layer on said substrate, a sacrificial layer being applied on the first passivation layer, and a first layer, which is to be undercut, being applied on the sacrificial layer;

forming at least one etch hole through the first layer;

isotropically etching the sacrificial layer to create the at least one undercut layer element; and

selectively depositing a cover material relative to the first passivation layer so that each etch hole is closed.

19. A method for manufacturing micro-mechanical components with undercut layer elements, said method comprising the steps of providing a layer stack having a substrate, a sacrificial layer applied on the substrate, a passivation layer applied on the sacrificial layer and a first layer, which is to be undercut, applied on the passivation layer;

creating at least one etch hole through the first layer and through the passivation layer;

isotropically etching the sacrificial layer so that the at least one undercut layer element is generated;

selectively depositing a cover material relative to the passivation layer, so that each etch hole is closed.