Diamond coatings on reactor wall and method of manufacturing thereof

• US 20020086501A1
• Filed: 12/29/2000
• Published: 07/04/2002
• Est. Priority Date: 12/29/2000
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Chang, Christopher C., Daugherty, John E., OʼDonnell, Robert J.
• Granted Patent: US 6,537,429 B2
• Time in Patent Office: Days
• US Class Current: 438/481
• CPC Class Codes: B01J 19/0073 Sealings sealings for pressure vessels per se F16J15/00
• CPC Class Codes: B01J 19/02 Apparatus characterised by being constructed of material selected for its chemically-resistant properties
• CPC Class Codes: B01J 2219/0231 of diamond
• CPC Class Codes: B01J 2219/025 characterised by the construction materials of the reactor vessel proper
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/27 Diamond only
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01J 37/32495 Means for protecting the vessel against plasma
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.

Claims

1. A process of coating a surface of a component of semiconductor processing equipment, the processing comprising:

(a) optionally depositing a first intermediate coating on a surface of a component of semiconductor processing equipment;

(b) optionally depositing a second intermediate coating on said first intermediate layer or on said surface; and

(c) depositing a diamond containing coating having a thickness of at least 0.001 inches on said component to form an outer erosion resistant surface.

2. The coating process according to claim 1, wherein said surface of said component comprises a metal, ceramic or polymer surface.

3. The coating process according to claim 2, wherein said surface is anodized aluminum.

4. The coating process according to claim 1, wherein said first intermediate coating is not optional.

5. The coating process according to claim 4, wherein said first intermediate coating comprises a metal, ceramic or polymer coating.

6. The coating process according to claim 1, wherein said component comprises a chamber wall of a plasma etching chamber.

7. The coating process according to claim 1, further comprising forming a roughened surface on said component, said diamond containing coating being deposited on said roughened surface.

8. The coating process according to claim 1, wherein said diamond containing coating comprises an amorphous tetrahedral carbon.

9. The coating process according to claim 1, wherein said diamond containing coating comprises at least one material other than diamond or a diamond-like material.

10. The coating process according to claim 9, wherein said other material is a metal, ceramic or polymer.

11. The coating process according to claim 10, wherein said other material includes titanium or silicon.

12. The coating process according to claim 11, wherein said other material comprises titanium carbide, titanium boride, titanium nitride, silicon carbide, silicon boride, silicon nitride or mixtures thereof.

13. The coating process according to claim 9, wherein said diamond containing coating is doped with said at least one material other than diamond or a diamond-like material.

14. The coating process according to claim 9, wherein said diamond containing coating is in the form of a composite of said diamond or diamond-like material and said material other than diamond or diamond-like material.

15. The coating process according to claim 1, wherein said diamond containing coating is deposited by chemical vapor deposition, plasma spray coating, sublimation, laser vaporization, sputtering, sputtering deposition, ion beam coating, spray coating, dip coating, evaporation coating, roll-on coating or brush coating.

17. The component according to claim 16, wherein the surface is a metal, ceramic or polymer surface.

18. The component according to claim 17, wherein said surface is anodized aluminum.

19. The component according to claim 16, wherein said first intermediate coating is not optional.

20. The component according to claim 16, wherein said component comprises a chamber wall of a plasma etching chamber.

21. The component according to claim 12, wherein said diamond containing coating comprises an amorphous tetrahedral carbon.

22. The component according to claim 16, wherein said diamond containing coating comprises at least one material other than diamond or a diamond-like material.

23. The component according to claim 22, wherein said other material is a metal, ceramic or polymer.

24. The component according to claim 23, wherein said other material includes titanium or silicon.

25. The component according to claim 24, wherein said other material comprises titanium carbide, titanium boride, titanium nitride, silicon carbide, silicon boride, silicon nitride or mixtures thereof.

26. The component according to claim 22, wherein said diamond containing coating is doped with said at least one material other than diamond or a diamond-like material.

27. The component according to claim 22, wherein said diamond containing coating is in the form of a composite of said diamond or diamond-like material and said material other than diamond or diamond-like material.

28. The component according to claim 16, further comprising one or more additional diamond containing or intermediate coatings.

29. The component according to claim 16, wherein diamond or a diamond-like material form a continuous matrix phase of said diamond containing coating.

16. A component of semiconductor processing equipment comprising:

(a) a surface;

(b) an optional first intermediate coating on said surface;

(c) an optional second intermediate coating on said first intermediate coating or on said surface; and

(d) a diamond containing coating having a thickness of at least 0.001 inches on said component that forms an outer corrosion resistant surface.

30. A component of semiconductor processing equipment having at least one surface exposed to plasma in the equipment, the component comprising a diamond containing material forming a surface at least 0.001 inches thick exposed to plasma in the equipment.

31. The component according to claim 30, wherein said entire component is made of said diamond containing material.