Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof

• US 20020086553A1
• Filed: 12/29/2000
• Published: 07/04/2002
• Est. Priority Date: 12/29/2000
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: OʼDonnell, Robert J., Chang, Christopher C., Daugherty, John E.
• Granted Patent: US 6,790,242 B2
• Time in Patent Office: Days
• US Class Current: 438/761
• CPC Class Codes: B01J 19/02 Apparatus characterised by being constructed of material selected for its chemically-resistant properties
• CPC Class Codes: B01J 2219/0204 comprising coatings on the surfaces in direct contact with the reactive components
• CPC Class Codes: B01J 2219/0263 Ceramic
• CPC Class Codes: B01J 2219/0277 Metal based
• CPC Class Codes: B01J 2219/0295 Synthetic organic materials
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: Y10S 423/39 Fullerene, e.g. c60, c70 derivative and related process
• CPC Class Codes: Y10S 423/40 Fullerene composition
• CPC Class Codes: Y10S 977/844 Growth by vaporization or dissociation of carbon source using a high-energy heat source, e.g. electric arc, laser, plasma, e-beam
• CPC Class Codes: Y10S 977/847 Surface modifications, e.g. functionalization, coating

Abstract

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a fullerene containing surface and process for manufacturing thereof.

Claims

1. A process for coating a surface of a component of semiconductor processing equipment, the process comprising:

(a) optionally depositing a first intermediate coating on a surface of a component of semiconductor processing equipment;

(b) optionally depositing a second intermediate coating on said first intermediate layer or on said surface; and

(c) depositing a fullerene containing coating on said component to form an outer erosion resistant surface.

2. The process for coating according to claim 1, wherein said surface of said component of semiconductor processing equipment comprises a metal, ceramic or polymer surface.

3. The process for coating according to claim 2, wherein said first intermediate coating is not optional.

4. The process for coating according to claim 3, wherein said first intermediate coating comprises a metal, ceramic or polymer coating.

5. The process for coating according to claim 1, wherein said component comprises a chamber wall of a plasma etching chamber.

6. The process for coating according to claim 1, further comprising forming a roughened surface on said component, said fullerene containing coating being deposited on said roughened surface.

7. The process for coating according to claim 1, wherein fullerenes present in said fullerene containing coating are C₆₀ fullerenes, C₇₀ fullerenes or mixtures thereof.

8. The process for coating according to claim 1, wherein said fullerene coating is deposited to a thickness ranging from about 0.001 to about 0.050 inches.

9. The process for coating according to claim 1, wherein fullerenes present in said fullerene containing coating are doped fullerenes.

10. The process for coating according to claim 1, wherein said fullerene containing coating is deposited by chemical vapor deposition, plasma spray coating, sublimation, laser vaporization, sputtering, sputtering deposition, ion beam coating, spray coating, dip coating, evaporation coating, roll-on coating or brush coating.

11. The process for coating according to claim 1, wherein one or more additional fullerene containing or intermediate coatings are applied to said component.

13. The component according to claim 12, wherein said surface (a) is a metal, ceramic or polymer surface.

14. The component according to claim 12, wherein said first intermediate coating is not optional.

15. The component according to claim 14, wherein said intermediate coating is a metal, ceramic or polymer coating.

16. The component according to claim 12, wherein said component comprises a chamber wall of a plasma etching chamber.

17. The component according to claim 12, wherein fullerenes present in said fullerene containing coating are C₆₀ fullerenes, C₇₀ fullerenes or mixtures thereof.

18. The component according to claim 10, wherein said fullerene containing coating has a thickness ranging from about 0.001 to about 0.050 inches.

19. The component according to claim 12, wherein fullerenes present in said fullerene containing coating are doped fullerenes.

20. The component according to claim 12, further comprising one or more additional fullerene containing or intermediate coatings.

21. The component according to claim 12, wherein fullerenes form a continuous matrix phase of said fullerene containing coating.

12. A component of semiconductor processing equipment comprising:

(a) a surface;

(b) an optional first intermediate coating on said surface;

(c) an optional second intermediate coating on said first intermediate coating or on said surface; and

(d) a fullerene containing coating on said component that forms an outer corrosion resistant surface.

22. A component of semiconductor processing equipment having at least one surface exposed to plasma in the equipment, the component comprising a fullerene containing material forming a surface exposed to plasma in the equipment.