Control of laser machining
First Claim
1. A method of machining a semiconductor material using a laser beam in which a formation is machined in the material to a width S using a laser beam of intensity IB and in which the beam is controlled to machine the material with a kerf K, characterised in that, the beam is controlled to scan n times, n being n≧
- 1 and, where n>
1, each subsequent scan is laterally offset and parallel to a preceding scan, and n is ≧
S/K.
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Accused Products
Abstract
A UV laser beam is used to machine semiconductor. The beams intensity (IB) is chosen so that it lies in a range of such values for which there is an increasing (preferably linear) material removal rate for increasing IB. An elongate formation such as a trough or a slot is machined in n scans laterally offset (O_center), for each value of z-integer in the z direction.
28 Citations
29 Claims
-
1. A method of machining a semiconductor material using a laser beam in which a formation is machined in the material to a width S using a laser beam of intensity IB and in which the beam is controlled to machine the material with a kerf K,
characterised in that, the beam is controlled to scan n times, n being n≧ - 1 and, where n>
1, each subsequent scan is laterally offset and parallel to a preceding scan, and n is ≧
S/K. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 26)
- 1 and, where n>
-
25. A laser machining apparatus comprising a laser source, means for directing a laser beam from the source at a semiconductor material to machine with a kerf K to a width S, and a controller for controlling parameters of the laser beam,
characterised in that, the controller comprises means for directing the laser beam in a plurality of n parallel passes, said passes being laterally offset, and wherein n is greater than or equal to S/K.
Specification