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Control of laser machining

  • US 20020088780A1
  • Filed: 10/26/2001
  • Published: 07/11/2002
  • Est. Priority Date: 10/26/2000
  • Status: Active Grant
First Claim
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1. A method of machining a semiconductor material using a laser beam in which a formation is machined in the material to a width S using a laser beam of intensity IB and in which the beam is controlled to machine the material with a kerf K, characterised in that, the beam is controlled to scan n times, n being n≧

  • 1 and, where n>

    1, each subsequent scan is laterally offset and parallel to a preceding scan, and n is ≧

    S/K.

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