Sputter chamber shield
First Claim
1. A method of preparing a shield to use in a ZnS—
- SiO2 deposition process chamber, comprising;
providing a baseplate configured to cover an interior surface of the process chamber;
roughening the baseplate; and
providing a coating over the baseplate and a greater surface roughness and adhesion strength than the roughened baseplate.
2 Assignments
0 Petitions
Accused Products
Abstract
Particulate contamination can occur in physical vapor deposition (PVD) systems when sputtered target material accumulates on the walls of the processing chamber and flakes off onto the workpiece. In a method for preparing a shield to reduce particulate contamination, sheet metal is formed to conform to the surfaces of the deposition chamber. The base metal is roughened, such as by sand blasting. A layer of coating material, whose coefficient of thermal expansion (CTE) is similar to that of the target material, is applied to the roughened base metal surface by a thermal spraying process. The surface of the coating is very rough, more than five times rougher than the underlying base metal texture. When the coating CTE and surface roughness are chosen carefully, shield performance can be optimized, resulting in longer processing times between shield replacements, reduced PVD chamber maintenance and less down time in these systems.
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Citations
27 Claims
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1. A method of preparing a shield to use in a ZnS—
- SiO2 deposition process chamber, comprising;
providing a baseplate configured to cover an interior surface of the process chamber;
roughening the baseplate; and
providing a coating over the baseplate and a greater surface roughness and adhesion strength than the roughened baseplate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 25, 26, 27)
- SiO2 deposition process chamber, comprising;
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13. A shield for a deposition chamber configured for depositing layers on a compact disc substrate, comprising:
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a baseplate having a surface roughness between about 60 μ
inch Ra and 250 μ
inch Ra; and
a coating directly over the baseplate having a surface roughness greater than about 600 μ
inch Ra.
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24. A sputtering reactor for producing compact discs, comprising:
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a process chamber defined by a plurality of walls and a ZnS—
SiO2 sputtering target; and
a shield including a coating with a surface roughness greater than about 800 μ
inch Ra covering at least some surfaces of the process chamber walls, the coating having a coefficient of thermal expansion between about 2×
10−
6 inch/F. and 7.5×
10−
6 inch/F.
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Specification
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- Resources
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Current AssigneeSTEAG HamaTech AG (Singulus Technologies AG)
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Original AssigneeSTEAG HamaTech AG (Singulus Technologies AG)
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InventorsJiang, Mingwei, Shkolnikov, Mikhail
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Application NumberUS09/989,508Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current427/446CPC Class CodesC23C 14/06 characterised by the coatin...C23C 14/564 Means for minimising impuri...C23C 4/00 Coating by spraying the coa...C23C 4/02 Pretreatment of the materia...
