Method and resulting device for manufacturing for double gated transistors
First Claim
1. A process for forming an integrated circuit device structure, said process comprising:
- forming a plurality of first gate structures on a thickness of material on a donor substrate, the donor substrate comprising a cleave region underlying the plurality of gate structures, the cleave region comprising a deposited layer, each of the gate structures having a substantially planar upper surface;
joining the donor substrate to a handle substrate where the plurality of gate structures including the planar upper surface face the handle substrate;
separating the thickness of material at the cleave region from the donor substrate to define a handle substrate comprising the plurality of gate structures and the overlying thickness of material; and
forming a plurality of second gate structures on the thickness of material, at least one of the first gate structures facing one of the second gate structures to form a channel region therebetween.
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Abstract
A process for forming an integrated circuit device structure. The process includes forming a first gate layer on a thickness of material on a donor substrate. The donor substrate has a cleave region underlying the gate layer. The process also includes joining the donor substrate to a handle substrate where the gate layer face the handle substrate; and separating the thickness of material at the cleave region from the donor substrate to define a handle substrate comprising the gate layer and an overlying thickness of material. The process forms a plurality of second gate structures on the thickness of material, where at least one of the first gate structures facing one of the second gate structures forming a channel region therebetween.
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Citations
20 Claims
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1. A process for forming an integrated circuit device structure, said process comprising:
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forming a plurality of first gate structures on a thickness of material on a donor substrate, the donor substrate comprising a cleave region underlying the plurality of gate structures, the cleave region comprising a deposited layer, each of the gate structures having a substantially planar upper surface;
joining the donor substrate to a handle substrate where the plurality of gate structures including the planar upper surface face the handle substrate;
separating the thickness of material at the cleave region from the donor substrate to define a handle substrate comprising the plurality of gate structures and the overlying thickness of material; and
forming a plurality of second gate structures on the thickness of material, at least one of the first gate structures facing one of the second gate structures to form a channel region therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A multi-gate MOS transistor structure comprising:
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a handle substrate;
a gate region defined overlying the handle substrate;
a first gate dielectric region defined overlying the gate region;
a cleaved region forming a channel region defined overlying the first gate dielectric region and defined overlying the first gate region, the cleaved region having a thickness of less than 250 nm and having a uniformity of 1-10%;
a second gate dielectric region defined overlying the channel region;
a second gate region defined overlying the second gate dielectric region and defined overlying the channel region, whereupon the second gate opposes the first gate and has the channel region defined between the first gate and the second gate. - View Dependent Claims (12, 14, 15, 16, 17, 18, 19, 20)
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13. A process for forming an integrated circuit device structure, said process comprising:
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forming a first gate layer on a thickness of material on a donor substrate, the donor substrate comprising a cleave region underlying the first gate layer, the first gate layer having a substantially planar upper surface;
joining the donor substrate to a handle substrate where the first gate layer including the planar upper surface face the handle substrate;
separating the thickness of material at the cleave region from the donor substrate to define a handle substrate comprising the first gate layer and the overlying thickness of material;
forming a second gate layer overlying the thickness of material to define a sandwiched structure including the first gate layer, the detached thickness of material, and second gate layer; and
patterning the sandwiched structure to define a first gate structure from the first gate layer defined opposite of a second gate structure from the second gate layer using at least an etching process where upon a channel region is defined from the detached and patterned thickness of material defined between the first gate structure and the second gate structure.
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Specification