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Methods of forming capacitor structures, and capacitor structures

  • US 20020090777A1
  • Filed: 01/05/2001
  • Published: 07/11/2002
  • Est. Priority Date: 01/05/2001
  • Status: Active Grant
First Claim
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1. A method of forming a capacitor structure, comprising:

  • forming a first electrical node;

    forming a layer of metallic aluminum over the first electrical node;

    transforming at least some the metallic aluminum within the layer of metallic aluminum to AlN or AlON;

    wherein the listed compounds are described in terms of chemical constituents rather than stoichiometry;

    the transformed layer being a dielectric material over the first electrical node; and

    forming a second electrical node that is electrically separated from the first electrical node by at least the dielectric material;

    the first electrical node, second electrical node and dielectric material together defining at least a portion of a capacitor structure.

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