Process window based optical proximity correction of lithographic images
First Claim
1. A method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate, the method comprising:
- providing a mask pattern of a feature to be created on the substrate using the mask;
establishing target dimensional bounds of the pattern;
determining simulated achievable dimensional bounds of the pattern;
comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern; and
determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern.
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Abstract
A method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate. The method comprises initially providing a mask pattern of a feature to be created on the substrate using the mask. The method then includes establishing target dimensional bounds of the pattern, determining simulated achievable dimensional bounds of the pattern, comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern, and determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern. In its preferred embodiment, the feature is an integrated circuit to be lithographically produced on a semiconductor substrate.
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Citations
25 Claims
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1. A method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate, the method comprising:
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providing a mask pattern of a feature to be created on the substrate using the mask;
establishing target dimensional bounds of the pattern;
determining simulated achievable dimensional bounds of the pattern;
comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern; and
determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of creating a pattern for a mask adapted for use in lithographic production of integrated circuits on a semiconductor substrate, the method comprising:
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providing a mask pattern of a feature to be created on the semiconductor substrate using the mask; and
modifying lithography process exposure dose and focus conditions and/or the mask pattern to maximize the usable range of exposure dose and focus conditions in the lithographic production.
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22. A method of creating a pattern for a mask adapted for use in lithographic production of integrated circuits on a semiconductor substrate, the method comprising:
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providing a mask pattern of a feature to be created on the semiconductor substrate using the mask;
establishing target dimensional bounds of the pattern; and
modifying the mask pattern such that the resulting image of the mask pattern created on the semiconductor substrate falls within the target dimensional bounds of the pattern.
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23. A method of creating a pattern for a mask adapted for use in lithographic production of integrated circuits on a semiconductor substrate, the method comprising:
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providing a mask pattern of a feature to be created on the semiconductor substrate using the mask;
determining simulated achievable dimensional bounds of the pattern; and
modifying the mask pattern such that the resulting image of the mask pattern created on the semiconductor substrate falls within the simulated achievable dimensional bounds of the pattern.
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24. A computer program product for creating a pattern for a mask adapted for use in lithographic production of integrated circuits on a semiconductor substrate, the mask pattern being of a feature to be created on the substrate using the mask, said computer program product having:
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computer readable program code means for establishing target dimensional bounds of the pattern;
computer readable program code means for;
determining simulated achievable dimensional bounds of the pattern;
comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern; and
computer readable program code means for determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern.
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25. A program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine to perform method steps for creating a pattern for a mask adapted for use in lithographic production of integrated circuits on a semiconductor substrate, the mask pattern being of a feature to be created on the substrate using the mask, said method steps comprising:
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establishing target dimensional bounds of the pattern;
determining simulated achievable dimensional bounds of the pattern;
comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern; and
determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern.
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Specification