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III-Phosphide and III-Arsenide flip chip light-emitting devices

  • US 20020093023A1
  • Filed: 03/11/2002
  • Published: 07/18/2002
  • Est. Priority Date: 06/03/1997
  • Status: Active Grant
First Claim
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1. A light-emitting semiconductor device comprising:

  • a stack of layers including an active region, said active region comprising a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof;

    a superstrate disposed on a first side of said stack, said superstrate substantially transparent to light emitted by said active region; and

    a first electrical contact and a second electrical contact electrically coupled to apply a voltage across said active region, said first electrical contact and said second electrical contact disposed on a second side of said stack opposite to said first side.

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