Method of producing a semiconductor integrated circuit device and the semiconductor integrated circuit device
First Claim
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1. A method of producing a semiconductor integrated circuit device comprising the steps of:
- (a) forming a first conductive film over a semiconductor substrate and then forming a first insulating film over the first conductive film;
(b) forming a plurality of gate electrodes and a cap insulating film covering an upper part of the gate electrodes by etching the first conductive film and the first insulating film;
(c) forming a third insulating film over the semiconductor substrate including sidewalls and an upper part of the cap insulating film;
(d) forming a fourth insulating film over the third insulating film;
(e) forming a first hole part by etching the fourth insulating film;
(f) etching the third insulating film exposed in a bottom of the first hole part by a predetermined amount after the step (e);
(g) forming a fifth insulating film having a film thickness not fully burying a space between the plurality of the gate electrodes over the fourth insulating film and sidewalls and the bottom of the first hole part; and
(h) forming a second hole part by applying anisotropic etching to the fifth insulating film.
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Abstract
An amount of a semiconductor substrate cut due to etching in the bottom of a contact hole formed by the SAC technique is reduced. Silicon oxide films are dry etched under the conditions of increasing the etching selective ratio of the silicon oxide films to an insulating film. Then, the conditions are changed to those increasing the etching selective ratio of the insulating film to the silicon oxide films and the insulating film is etched by a predetermined amount.
6 Citations
54 Claims
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1. A method of producing a semiconductor integrated circuit device comprising the steps of:
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(a) forming a first conductive film over a semiconductor substrate and then forming a first insulating film over the first conductive film;
(b) forming a plurality of gate electrodes and a cap insulating film covering an upper part of the gate electrodes by etching the first conductive film and the first insulating film;
(c) forming a third insulating film over the semiconductor substrate including sidewalls and an upper part of the cap insulating film;
(d) forming a fourth insulating film over the third insulating film;
(e) forming a first hole part by etching the fourth insulating film;
(f) etching the third insulating film exposed in a bottom of the first hole part by a predetermined amount after the step (e);
(g) forming a fifth insulating film having a film thickness not fully burying a space between the plurality of the gate electrodes over the fourth insulating film and sidewalls and the bottom of the first hole part; and
(h) forming a second hole part by applying anisotropic etching to the fifth insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of producing a semiconductor integrated circuit device comprising the steps of:
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(a) forming a first conductive film over a semiconductor substrate and then forming a first insulating film over the first conductive film;
(b) forming a plurality of gate electrodes and a cap insulating film covering an upper part of the gate electrodes by etching the first conductive film and the first insulating film;
(c) forming a second insulating film by oxidizing sidewalls of the plurality of gate electrodes and a surface of the semiconductor substrate between the plurality of gate electrodes;
(d) forming a third insulating film over the semiconductor substrate including an upper part of the second insulating film and an upper part and sidewalls of the cap insulating film;
(e) forming a fourth insulating film over the third insulating film;
(f) forming a first hole part by etching the fourth insulating film;
(g) etching the third insulating film exposed in a bottom of the first hole part using the second insulating film as an etching stopper after the step (f);
(h) forming a fifth insulating film having a film thickness not fully burying a space between the plurality of gate electrodes over the fourth insulating film and sidewalls and the bottom of the first hole part;
(i) applying anisotropic etching to the fifth insulating film to expose the second insulating film; and
(j) forming a second hole part by removing the second insulating film exposed from the fifth insulating film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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18. A method of producing a semiconductor integrated circuit device comprising the steps of:
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(a) forming a first conductive film over a semiconductor substrate and then forming a first insulating film over the first conductive film;
(b) forming a plurality of gate electrodes and a cap insulating film covering an upper part of the gate electrodes by etching the first conductive film and the first insulating film;
(c) forming a third insulating film over the semiconductor substrate including an upper part and sidewalls of the cap insulating film;
(d) forming a fourth insulating film over the third insulating film;
(e) forming a first hole part by etching the fourth insulating film;
(f) etching the third insulating film exposed in a bottom of the first hole part by a predetermined amount after the step (e);
(g) forming a fifth insulating film having a film thickness not fully burying a space between the plurality of the gate electrodes over the fourth insulating film and sidewalls and the bottom of the first hole part;
(h) forming a second hole part by applying anisotropic etching to the fifth insulating film; and
(i) forming a second conductive film inside the second hole part, wherein the third insulating film is overlapped with the fifth insulating film in the bottom of the second hole part.
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29. A method of producing a semiconductor integrated circuit device comprising the steps of:
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(a) forming a first conductive film over a semiconductor substrate and then forming a first insulating film over the first conductive film;
(b) forming a plurality of gate electrodes and a cap insulating film covering an upper part of the gate electrodes by etching the first conductive film and the first insulating film;
(c) forming a second insulating film by oxidizing sidewalls of the plurality of gate electrodes and a surface of the semiconductor substrate between the plurality of gate electrodes;
(d) forming a third insulating film over the semiconductor substrate including an upper part of the second insulating film and an upper part and sidewalls of the cap insulating film;
(e) forming a fourth insulating film over the third insulating film;
(f) forming a first hole part by etching the fourth insulating film;
(g) etching the third insulating film exposed in a bottom of the first hole part using the second insulating film as an etching stopper after the step (f);
(h) forming a fifth insulating film having a film thickness not fully burying a space between the plurality of gate electrodes over the fourth insulating film and sidewalls and the bottom of the first hole part;
(i) applying anisotropic etching to the fifth insulating film to expose the second insulating film;
(j) forming a second hole part by removing the second insulating film exposed from the fifth insulating film; and
(k) forming a second conductive film inside the second hole part, wherein the third insulating film is overlapped with the fifth insulating film in a bottom of the second hole part.
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40. A semiconductor integrated circuit device comprising:
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a plurality of gate electrodes formed over a semiconductor substrate;
a cap insulating film formed over the plurality of gate electrodes;
a second hole part formed between the plurality of gate electrodes, the second hole part reaching the semiconductor substrate;
a third insulating film configuring at least a part of sidewalls of the cap insulating film, sidewalls of the gate electrodes and sidewalls of the second hole part;
a fourth insulating film formed over the third insulating film;
a fifth insulating film configuring the sidewalls of the second hole part; and
a second conductive film formed inside the second hole part, wherein the third insulating film is overlapped with the fifth insulating film in a bottom of the second hole part. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54)
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Specification