Method of manufacturing semiconductor device

• US 20020094612A1
• Filed: 01/17/2002
• Published: 07/18/2002
• Est. Priority Date: 01/18/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Murakami, Satoshi, Nakamura, Osamu, Yamazaki, Shunpei, Dairiki, Koji, Kajiwara, Masayuki
• Granted Patent: US 6,858,480 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/3226 of silicon on insulator
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78624 the source and the drain regions being asymmetrical
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added, are formed in a semiconductor film having a crystalline structure, using a mask, and gettering for segregating a metal element contained in the semiconductor film to the impurity region by heat treatment. Thereafter, pattering is conducted using the mask, whereby a semiconductor layer made of the semiconductor film having a crystalline structure is formed.

Claims

1. A method of manufacturing a semiconductor device, comprising steps of:

adding a metal element to a semiconductor film having an amorphous structure;

crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;

selectively adding a rare gas element to the semiconductor film having a crystalline structure to form an impurity region;

gettering the metal element to the impurity region to selectively remove to or reduce the metal element in the semiconductor film having a crystalline structure; and

removing the impurity region.

2. A method according to claim 1, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element.

3. A method according to claim 1, wherein the selectively adding a rare gas element is conducted in an atmosphere containing a rare gas element and water vapor.

4. A method according to claim 1, further comprising a step of irradiating the semiconductor film with strong light or laser light from a front surface or a reverse surface to activate the impurity element after the removing the impurity region.

5. A method according to claim 1, further comprising a step of oxidizing a surface of the semiconductor film having a crystalline structure with a solution containing ozone after the crystallizing.

6. A method according to claim 1, wherein the crystallizing is conducted by heat treatment.

7. A method according to claim 1, wherein the crystallizing is conducted by irradiation of the semiconductor film having an amorphous structure with strong light.

8. A method according to claim 7, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

9. A method according to claim 1, wherein the crystallizing is conducted by heat treatment and irradiation of the semiconductor film having an amorphous structure with strong light.

10. A method according to claim 9, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

11. A method according to claim 1, wherein the gettering is conducted by heat treatment.

12. A method according to claim 1, wherein the gettering is conducted by irradiation of the semiconductor film with strong light.

13. A method according to claim 12, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

14. A method according to claim 1, wherein the gettering is conducted by heat treatment and irradiation of the semiconductor film with strong light.

15. A method according to claim 14, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

16. A A method according to claim 1, wherein the metal element is one kind or a plurality of kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

17. A method according to claim 1, wherein the rare gas element is one kind or a plurality of kinds of elements selected from He, Ne, Ar, Kr, and Xe.

19. A method according to claim 18, wherein the impurity region and apart of the semiconductor film having a crystalline structure are removed in the selectively removing the semiconductor film.

20. A method according to claim 18, wherein the second mask is provided at a position on an inner side of the ends of the first mask.

21. A method according to claim 18, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element.

22. A method according to claim 18, wherein the selectively adding a rare gas element is conducted in an atmosphere containing a rare gas element and water vapor.

23. A method according to claim 18, further comprising a step of irradiating the semiconductor film with strong light or laser light from a front surface or a reverse surface to activate the impurity element after the removing the semiconductor film.

24. A method according to claim 18, further comprising a step of oxidizing a surface of the semiconductor film having a crystalline structure with a solution containing ozone after the crystallizing.

25. A method according to claim 18, wherein the crystallizing is conducted by heat treatment.

26. A method according to claim 18, wherein the crystallizing is conducted by irradiation of the semiconductor film having an amorphous structure with strong light.

27. A method according to claim 26, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

28. A method according to claim 18, wherein the crystallizing is conducted by heat treatment and irradiation of the semiconductor film having an amorphous structure with strong light.

29. A method according to claim 18, wherein the gettering is conducted by heat treatment.

30. A method according to claim 18, wherein the gettering is conducted by irradiation of the semiconductor film with strong light.

31. A method according to claim 30, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

32. A method according to claim 18, wherein the gettering is conducted by heat treatment and irradiation of the semiconductor film with strong light.

33. A A method according to claim 18, wherein the metal element is one kind or a plurality of kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

34. A method according to claim 18, wherein the rare gas element is one kind or a plurality of kinds of elements selected from He, Ne, Ar, Kr, and Xe.

36. A method according to claim 35, wherein the impurity region and a part of the semiconductor film having a crystalline structure are removed in the selectively removing the semiconductor film.

37. A method according to claim 35, wherein the second mask is provided at a position on an inner side of the ends of the first mask.

38. A method according to claim 35, wherein one kind or a plurality of kinds of elements selected from the group consisting of H, H₂, O, O₂, and P are added in addition to the rare gas element.

39. A method according to claim 35, wherein the selectively adding a rare gas element is conducted in an atmosphere containing a rare gas element and water vapor.

40. A method according to claim 35, further comprising a step of irradiating the semiconductor film with strong light or laser light from a front surface or a reverse surface to activate the impurity element after the removing the semiconductor film.

41. A method according to claim 35, further comprising a step of oxidizing a surface of the semiconductor film having a crystalline structure with a solution containing ozone after the crystallizing.

42. A method according to claim 35, wherein the crystallizing is conducted by heat treatment.

43. A method according to claim 35, wherein the crystallizing is conducted by irradiation of the semiconductor film having an amorphous structure with strong light.

44. A method according to claim 43, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

45. A method according to claim 35, wherein the crystallizing is conducted by heat treatment and irradiation of the semiconductor film having an amorphous structure with strong light.

46. A method according to claim 35, wherein the gettering is conducted by heat treatment.

47. A method according to claim 35, wherein the gettering is conducted by irradiation of the semiconductor film with strong light.

48. A method according to claim 47, wherein the strong light is emitted from a lamp selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp, and a high-pressure mercury lamp.

49. A method according to claim 35, wherein the gettering is conducted by heat treatment and irradiation of the semiconductor film with strong light.

50. A A method according to claim 35, wherein the metal element is one kind or a plurality of kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

51. A method according to claim 35, wherein the rare gas element is one kind or a plurality of kinds of elements selected from He, Ne, Ar, Kr, and Xe.

18. A method of manufacturing a semiconductor device comprising steps of:

adding a metal element to a semiconductor film having an amorphous structure;

crystallizing the semiconductor film having an amorphous structure to form a semiconductor film having a crystalline structure;

forming a first mask on the semiconductor film having a crystalline structure;

selectively adding a rare gas element to the semiconductor film having a crystalline structure to form an impurity region;

gettering the metal element to the impurity region to selectively remove or reduce the metal element in the semiconductor film having a crystalline structure;

forming a second mask on the semiconductor film having a crystalline structure; and

selectively removing the semiconductor film.

35. A method of manufacturing a semiconductor device comprising steps of:

forming a first mask on a semiconductor film having an amorphous structure;

selectively adding a metal element to the semiconductor film having an amorphous structure;

crystallizing the semiconductor film to form a semiconductor film having a crystalline structure;

selectively adding a rare gas element to the semiconductor film having a crystalline structure to form an impurity region;

gettering the metal element to the impurity region to selectively remove or reduce the metal element in the semiconductor film having a crystalline structure;

forming a second mask on the semiconductor film having a crystalline structure; and

selectively removing the semiconductor film.