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Systems and methods for enhancing plasma processing of a semiconductor substrate

  • US 20020096258A1
  • Filed: 11/28/2001
  • Published: 07/25/2002
  • Est. Priority Date: 11/30/2000
  • Status: Active Grant
First Claim
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1. A plasma reactor system for processing a substrate, the plasma reactor comprising:

  • a processing chamber for containing a plasma, the plasma comprising at least one plasma product for processing the substrate;

    a gas inlet coupled to the processing chamber for providing gas to the processing chamber;

    a first power source;

    an induction coil, coupled to the first power source, to couple power from the first power source into the processing chamber to sustain the plasma;

    a plasma shaping member positioned within the processing chamber, the plasma shaping member having a recessed portion substantially above the center of the substrate and an extended portion outside the recessed portion; and

    a support for the substrate positioned such that the substrate is exposed to the at least one plasma product during processing.

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