High-frequency power amplifier
First Claim
1. A high-frequency power amplifier comprising:
- a plurality of high-frequency amplifier sections, each being composed of bipolar transistors;
a plurality of capacitors each corresponding to one of said high-frequency power amplifier sections, one end of each capacitor being connected to bases of the bipolar transistors of the corresponding high-frequency power amplifier section, and the other end thereof being connected to a high-frequency power supply; and
a plurality of bias circuits each corresponding to one of said high-frequency power amplifier sections, applying a bias voltage to the bases of the bipolar transistors of the corresponding high-frequency power amplifier section, wherein each bias circuit is located close to the corresponding one of said high-frequency power amplifier sections, and includes a bias voltage lowering section lowering the bias voltage in response to a increase in temperature of the bipolar transistors.
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Accused Products
Abstract
The present invention includes: a plurality of high-frequency amplifier sections, each being composed of bipolar transistors; capacitors, each corresponding to one of the high-frequency amplifier sections, one end of each capacitor being connected to the bases of the bipolar transistors in the corresponding high-frequency amplifier section, and the other end thereof being connected to a high-frequency power supply; and bias circuits, each corresponding to one of the high-frequency amplifier sections, supplying a bias voltage to the bases of the bipolar transistors of the corresponding high-frequency amplifier section. Each bias circuit has a bias voltage lowering section, which is located close to the bipolar transistors of the corresponding high-frequency amplifier section to reduce the bias voltage in response to a rise in temperature of the bipolar transistors.
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Citations
12 Claims
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1. A high-frequency power amplifier comprising:
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a plurality of high-frequency amplifier sections, each being composed of bipolar transistors;
a plurality of capacitors each corresponding to one of said high-frequency power amplifier sections, one end of each capacitor being connected to bases of the bipolar transistors of the corresponding high-frequency power amplifier section, and the other end thereof being connected to a high-frequency power supply; and
a plurality of bias circuits each corresponding to one of said high-frequency power amplifier sections, applying a bias voltage to the bases of the bipolar transistors of the corresponding high-frequency power amplifier section, wherein each bias circuit is located close to the corresponding one of said high-frequency power amplifier sections, and includes a bias voltage lowering section lowering the bias voltage in response to a increase in temperature of the bipolar transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A high-frequency power amplifier comprising:
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a plurality of high-frequency amplifier sections, each being composed of bipolar transistors;
a plurality of capacitors each corresponding to one of said high-frequency power amplifier sections, one end of each capacitor being connected to bases of the bipolar transistors of the corresponding high-frequency amplifier section, and the other end thereof being connected to a high-frequency power supply; and
a plurality of bias circuits each corresponding to one of said high-frequency power amplifier sections, applying a bias voltage to the bases of the bipolar transistors of the corresponding high-frequency power amplifier section, wherein each of said bias circuits has a function to control a base current supplied to the bases of the bipolar transistors in the corresponding high-frequency section so as not to exceed a predetermined value. - View Dependent Claims (10, 11, 12)
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Specification