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High-frequency power amplifier

  • US 20020097097A1
  • Filed: 01/18/2002
  • Published: 07/25/2002
  • Est. Priority Date: 01/19/2001
  • Status: Active Grant
First Claim
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1. A high-frequency power amplifier comprising:

  • a plurality of high-frequency amplifier sections, each being composed of bipolar transistors;

    a plurality of capacitors each corresponding to one of said high-frequency power amplifier sections, one end of each capacitor being connected to bases of the bipolar transistors of the corresponding high-frequency power amplifier section, and the other end thereof being connected to a high-frequency power supply; and

    a plurality of bias circuits each corresponding to one of said high-frequency power amplifier sections, applying a bias voltage to the bases of the bipolar transistors of the corresponding high-frequency power amplifier section, wherein each bias circuit is located close to the corresponding one of said high-frequency power amplifier sections, and includes a bias voltage lowering section lowering the bias voltage in response to a increase in temperature of the bipolar transistors.

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