Nonvolatile semiconductor memory device and method of operation thereof
First Claim
1. A nonvolatile semiconductor memory device comprising:
- a channel forming region comprised of a first conductivity type semiconductor, two source and drain regions comprised of a second conductivity type semiconductor sandwiching the channel forming region between them, a gate insulating film provided on said channel forming region, a gate electrode provided on said gate insulating film, and a charge storing means which is formed in said gate insulating film dispersed in the plane facing said channel forming region and in the direction of thickness and is injected with hot electrons at the time of operation from said source and drain regions.
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Accused Products
Abstract
A MONOS type memory transistor increased in injection efficiency or storing a plurality of bits of data by local injection or a charge into part of a plane area of distribution of a charge storing means, comprised of a channel forming region of a first conductivity type, source and drain regions of a second conductivity type, gate insulating films formed on the channel forming region, gate electrodes, and a charge storing means (charge traps) formed in the gate insulating film and dispersed in a plane facing the channel forming region and the thickness direction and in which hot electrons caused by a band-to-band tunneling current are injected from the source and drain regions, where in the gate insulating film, between a first storage region and a second storage region into which electrons are locally injected, there is a third region into which hot electrons are not injected.
21 Citations
40 Claims
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1. A nonvolatile semiconductor memory device comprising:
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a channel forming region comprised of a first conductivity type semiconductor, two source and drain regions comprised of a second conductivity type semiconductor sandwiching the channel forming region between them, a gate insulating film provided on said channel forming region, a gate electrode provided on said gate insulating film, and a charge storing means which is formed in said gate insulating film dispersed in the plane facing said channel forming region and in the direction of thickness and is injected with hot electrons at the time of operation from said source and drain regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of operating a nonvolatile semiconductor memory device comprising:
- a channel forming region comprised of a first conductivity type semiconductor, source and drain regions comprised of a second conductivity type semiconductor with said channel forming region in between, a gate insulating film provided on said channel forming region and including inside it a charge storing means dispersed in a plans facing said channel forming region and thickness direction, and a gate electrode provided on the gate insulating film;
said method comprising a stop of injecting hot electrons into said charge storing means from said source and drain regions when writing data to the device. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
- a channel forming region comprised of a first conductivity type semiconductor, source and drain regions comprised of a second conductivity type semiconductor with said channel forming region in between, a gate insulating film provided on said channel forming region and including inside it a charge storing means dispersed in a plans facing said channel forming region and thickness direction, and a gate electrode provided on the gate insulating film;
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40. A method of operating a nonvolatile semiconductor memory device as set forth in clam 38, wherein said gate insulating film comprises:
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a bottom insulating film on said channel forming region; and
mutually insulated small particle conductors formed on the bottom film and functioning as said charge storing means.
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Specification