Versatile atomic layer deposition apparatus

• US 20020100418A1
• Filed: 03/11/2002
• Published: 08/01/2002
• Est. Priority Date: 05/12/2000
• Status: Abandoned Application

• Current Assignee: Garo J. Derderian, Gurtej Sandhu
• Original Assignee: Garo J. Derderian, Gurtej Sandhu
• Inventors: Sandhu, Gurtej, Derderian, Garo J.
• Application Number:
  US10/093,394
• Publication Number:
  US 20020100418A1
• Time in Patent Office: Days
• US Class Current: 118/719
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Abstract

An improved ALD apparatus is disclosed as having multiple deposition regions in which individual monolayer species are deposited on a substrate under different processing conditions in each region. Each deposition region is chemically separated from an adjacent deposition region. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent deposition regions. According to the number of deposition regions provided, a multitude of substrates could be simultaneously processed and run through the cycle of deposition regions until a desired thickness of deposited solid film is obtained.

Claims

1. An atomic layer deposition apparatus comprising:

a first atomic layer deposition region for depositing a first gas species on a first substrate as a monolayer;

a second atomic layer deposition region for depositing a second gas species on said first substrate as a monolayer, said first and second deposition regions being chemically isolated from one another; and

a loading assembly for moving said first substrate from said first deposition region to said second deposition region, thereby enabling deposition of a first atomic monolayer in said first deposition region, followed by deposition of a second atomic monolayer in said second deposition region.

2. The deposition apparatus of claim 1, wherein said first and second deposition regions are adjacent to one another and chemically isolated.

3. The deposition apparatus of claim 2, wherein said first and second deposition regions are chemically isolated from one another by a gas curtain.

4. The deposition apparatus of claim 3, wherein said gas curtain is formed of an inert gas.

5. The deposition apparatus of claim 2, wherein said first and second deposition regions are chemically isolated from one another by a physical barrier having a closeable opening through which said loading assembly can move a substrate.

6. The deposition apparatus of claim 1, wherein said loading assembly is further able to move said substrate from said second deposition region back to said first deposition region.

7. The deposition apparatus of claim 1 further comprising a plurality of first and second atomic layer deposition regions.

8. The deposition apparatus of claim 7, wherein said plurality of first and second deposition regions are grouped in pairs of first and second deposition regions, so that at least said first substrate and a second substrate can be treated simultaneously in respective pairs of first and second deposition regions.

9. The deposition apparatus of claim 8 further comprising a third pair of first and second atomic layer deposition regions for processing a third substrate in said third pair of first and second atomic layer deposition regions simultaneously with processing of said first and second substrates.

10. The deposition apparatus of claim 7, wherein said loading assembly is located at the center of said deposition regions.

11. The deposition apparatus of claim 1 further comprising at least one third atomic layer deposition region.

12. The deposition apparatus of claim 11, wherein said firsts second, and third deposition regions are adjacent to one another and chemically isolated.

13. The deposition apparatus of claim 12, wherein said first, second, and third deposition regions are chemically isolated from one another by a gas curtain.

14. The deposition apparatus of claim 13, wherein said gas curtain is formed of an inert gas.

15. The deposition apparatus of claim 11, wherein said first, second, and third deposition regions are chemically isolated from one another by a physical barrier having a closeable opening through which said loading assembly can move a substrate.

16. The deposition apparatus of claim 11, wherein said loading assembly is further able to move sequentially said first substrate among said first deposition region, said second deposition region, and said third deposition region.

17. The deposition apparatus of claim 16, wherein said loading assembly is further able to move sequentially another substrate among said first deposition region, said second deposition region, and said third deposition region.

19. The deposition apparatus of claim 18, wherein said loading assembly is further able to move said substrate through all of said plurality of atomic layer deposition regions.

20. The deposition apparatus of claim 18, wherein said loading assembly is further able to move said substrate through predetermined regions of said plurality of atomic layer deposition regions.

21. The deposition apparatus of claim 20, wherein said loading assembly moves said substrate between two adjacent atomic layer deposition regions.

22. The deposition apparatus of claim 20, wherein said loading assembly moves said substrate among three adjacent atomic layer deposition regions.

23. The deposition apparatus of claim 18, wherein said loading assembly is further able to move a second substrate through at least two of said plurality of atomic layer deposition regions in accordance with a second predefined pattern.

24. The deposition apparatus of claim 18, wherein said loading assembly is further able to move a plurality of substrates, each of said plurality of substrates residing in respective regions, to another of said plurality of regions.

25. The deposition apparatus of claim 24, wherein said loading assembly is further able to move sequentially said plurality of substrates through all said deposition regions.

26. The deposition apparatus of claim 24, wherein said loading assembly is further able to move said plurality of substrates through predetermined regions of said deposition regions.

27. The deposition apparatus of claim 18, wherein said loading assembly is located at the center of said deposition regions.

28. The deposition apparatus of claim 18, wherein said deposition regions are adjacent to one another and chemically isolated.

29. The deposition apparatus of claim 28, wherein said deposition regions are chemically isolated from one another by a gas curtain.

30. The deposition apparatus of claim 29, wherein said gas curtain is formed of an inert gas.

31. The deposition apparatus of claim 28, wherein said deposition regions are chemically isolated from one another by a physical barrier having a closeable opening through which said loading assembly can move a substrate.

18. An atomic layer deposition apparatus comprising:

a plurality of atomic layer deposition regions, each for depositing a respective gas species on a first substrate as a monolayer, each of said plurality of regions being chemically isolated from one another; and

a loading assembly for moving said first substrate through at least two of said plurality of atomic layer deposition regions in accordance with a first predefined pattern.

32. A method of operating an atomic layer deposition apparatus, said deposition apparatus comprising a first deposition region and a second deposition region, said first and second deposition regions being chemically isolated from one another, said method comprising the steps of:

positioning a wafer in said first deposition region;

introducing a first gas species into said first deposition region and depositing said first gas species on said wafer as a first atomic monolayer;

moving said wafer from said first deposition region to said second deposition region; and

introducing a second gas species into said second deposition region and depositing said second gas species on said wafer as a second atomic monolayer.

33. The method of claim 32 further comprising the step of moving said wafer back and forth between said first and second deposition regions and depositing a respective gas species in each of said deposition regions.

34. The method of claim 32, wherein said first and second deposition regions are adjacent to each other.

35. The method of claim 32 further comprising the step of simultaneously processing at least two wafers among said first and second deposition regions and depositing a respective gas species in each of said deposition regions.

36. The method of claim 32, wherein said least two wafers are sequentially moved among said first and second deposition regions.

38. The method of claim 37, wherein said step of depositing said first monolayer species further comprises introducing a first gas species into said first deposition region.

39. The method of claim 37, wherein said step of depositing said second monolayer species further comprises introducing a second gas species into said second deposition region.

40. The method of claim 37 further comprising the step of moving said substrate back and forth between said first and second deposition regions and depositing a respective gas species in each of said deposition regions.

41. The method of claim 37 wherein a plurality of first and second deposition regions are provided, and said method further comprising depositing said first and second monolayer species on respective substrates in respective pairs of first and second deposition regions, said first and second deposition regions of each pair being adjacent to one another.

42. The method of claim 41, wherein a plurality of substrates, each of said plurality of substrates residing in respective regions, are moved sequentially from said first deposition regions to said second deposition regions.

43. The method of claim 40 further comprising the step of moving said substrate from said first deposition region, to said second deposition region, and to a third deposition region.

44. The method of claim 43 further comprising the step of processing simultaneously at least two substrates, each of said two substrates residing in respective regions, among all said first, second, and third deposition regions.

45. The method of claim 43, wherein said least two substrates, each of said two substrates residing in respective regions, are moved sequentially to said first deposition region, to said second deposition region, and to said third deposition region.

47. The method of claim 46 further comprising the step of sequentially moving said plurality of wafers through at least two of said plurality of deposition regions in accordance with a predefined pattern.

48. The method of claim 46 further comprising the step of sequentially moving said plurality of wafers through all said deposition regions.

49. The method of claim 46 further comprising the step of sequentially moving said plurality of wafers through predetermined regions of said deposition regions.

37. A method of conducting atomic layer deposition comprising the steps of:

depositing a first monolayer species on a substrate in a first deposition region;

moving said substrate from said first deposition region to a second deposition region, which is chemically isolated from said first deposition region; and

depositing a second monolayer species on said substrate in said second deposition region.

46. A method of operating an atomic layer deposition apparatus, said deposition apparatus comprising a plurality of deposition regions, said deposition regions being chemically isolated from one another, said method comprising the steps of:

positioning a plurality of wafers in respective deposition regions;

introducing a first gas species into some of said plurality of deposition regions and depositing said first gas species on at least one of said plurality of wafers as a first atomic monolayer;

moving said plurality of wafers from said some of said plurality of deposition regions to other deposition regions; and

introducing a second gas species into said other deposition regions and depositing said second gas species on at least one of said plurality of wafers as a second atomic monolayer.