Method of manufacturing display device

• US 20020102758A1
• Filed: 01/31/2002
• Published: 08/01/2002
• Est. Priority Date: 01/31/2001
• Status: Active Grant

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Sakaguchi, Kiyofumi, Yonehara, Takao
• Granted Patent: US 6,891,578 B2
• Time in Patent Office: Days
• US Class Current: 438/30
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: G02F 2202/105 single crystal Si
• CPC Class Codes: G02F 2203/01 transmissive

Abstract

A thin-film semiconductor device used for a display region and peripheral circuit region and a method of manufacturing the same are provided. A method of manufacturing a display device includes the step of preparing a member having, on a separation layer, a semiconductor film having a first region with a switching element and a second region with a peripheral circuit, the step of forming an image display portion on the first region, and the separation step of separating the first and second regions from the member.

Claims

1. A method of manufacturing a display device, comprising:

the step of preparing a member having, on a separation layer, a semiconductor film having a first region with a switching element and a second region with a peripheral circuit;

the step of forming an image display portion on the first region; and

the separation step of separating the first and second regions from the member together with the image display portion.

2. The method according to claim 1, wherein the member is obtained by forming a porous layer on a surface of a semiconductor substrate, forming the semiconductor film on a surface of the porous layer, and then forming the first and second regions.

3. The method according to claim 2, wherein the semiconductor film is formed on the surface of the porous layer after forming a protective film on inner walls of pores in the porous layer.

4. The method according to claim 1, wherein the member is obtained by forming the first and second regions on a surface of a semiconductor substrate and implanting ions from the surface side to a predetermined depth to form the separation layer.

5. The method according to claim 2, wherein the semiconductor substrate is a single-crystal silicon substrate or a compound semiconductor substrate.

6. The method according to claim 4, wherein the semiconductor substrate is a single-crystal silicon substrate or a compound semiconductor substrate.

7. The method according to claim 1, wherein the separation step is executed by injecting a fluid formed from a liquid or gas to or near a side surface of the separation layer.

8. The method according to claim 1, wherein the separation step is executed under a static pressure.

9. The method according to claim 1, wherein the member is formed again using a remaining member which remains after the first and second regions are separated from the member.

10. A display device comprising:

a semiconductor film laid out on a separation surface and having a first region with a switching element and a second region with a peripheral circuit; and

an image display portion laid out on the first region.