Thin-film semiconductor device and method of manufacturing the same
First Claim
1. A method of manufacturing a thin-film semiconductor device, comprising:
- the step of preparing a member having, on a separation layer, a semiconductor film having a semiconductor element and/or semiconductor integrated circuit;
the step of forming kerfs from the semiconductor film side of the member; and
the separation step of, after the kerf formation step, separating a desired region of the semiconductor element and/or semiconductor integrated circuit from the member.
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Abstract
This invention provides a method of manufacturing a thin-film semiconductor device by a smaller number of processes with reduced influence on a device formation layer at the time of separation. This manufacturing method includes the step of preparing a member having, on a separation layer, a semiconductor film having a semiconductor element and/or semiconductor integrated circuit, the step of forming kerfs from the semiconductor film side of the member, and the separation step of, after the kerf formation step, separating a desired region of the semiconductor element and/or semiconductor integrated circuit from the member.
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Citations
22 Claims
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1. A method of manufacturing a thin-film semiconductor device, comprising:
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the step of preparing a member having, on a separation layer, a semiconductor film having a semiconductor element and/or semiconductor integrated circuit;
the step of forming kerfs from the semiconductor film side of the member; and
the separation step of, after the kerf formation step, separating a desired region of the semiconductor element and/or semiconductor integrated circuit from the member. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A thin-film semiconductor device obtained by processing a member having, on a separation layer, a semiconductor film having a semiconductor element and/or semiconductor integrated circuit, wherein the process comprises
the kerf formation step of forming kerfs from the semiconductor film side of the member, and the separation step of, after the kerf formation step, separating a desired region of the semiconductor element and/or semiconductor integrated circuit from the member.
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21. A method of manufacturing a semiconductor device, comprising:
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preparing a member which has a separation layer on a base and a semiconductor film having a plurality of chip regions on the separation layer;
forming kerfs in the semiconductor film to partition the plurality of chip regions; and
forming cracks in the separation layer to separate each of the partitioned chip regions from the base.
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22. A semiconductor device obtained by processing a member having a separation layer on a base and a plurality of chip regions on the separation layer,
wherein the process comprises forming kerfs in the semiconductor film to partition the plurality of chip regions, and forming cracks in the separation layer to separate each of the partitioned chip regions from the base.
Specification