Manufacturing method of compound semiconductor wafer
First Claim
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1. A manufacturing method of a compound semiconductor wafer, comprising:
- a step (a) of forming a closed-ring protector film covering a part of a top surface and a side surface of a substrate;
a step (b) of conducting, after said step (a), epitaxial growth of a compound semiconductor film including nitrogen in a composition thereof on the top surface and the side surface of said substrate at a region where it is not covered with said protector film; and
a step (c) of removing said substrate after said step (b), wherein said protector film formed in said step (a) has a function of interfering with the epitaxial growth of said compound semiconductor film formed in said step (b).
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Abstract
A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and the compound semiconductor film are separated from each other by irradiation of laser light, polishing of the substrate, etching, cutting, etc. Consequently, the resulting compound semiconductor film is used as a free-standing wafer.
33 Citations
21 Claims
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1. A manufacturing method of a compound semiconductor wafer, comprising:
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a step (a) of forming a closed-ring protector film covering a part of a top surface and a side surface of a substrate;
a step (b) of conducting, after said step (a), epitaxial growth of a compound semiconductor film including nitrogen in a composition thereof on the top surface and the side surface of said substrate at a region where it is not covered with said protector film; and
a step (c) of removing said substrate after said step (b), wherein said protector film formed in said step (a) has a function of interfering with the epitaxial growth of said compound semiconductor film formed in said step (b). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A manufacturing method of a compound semiconductor wafer, comprising:
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a step (a) of conducting epitaxial growth of a compound semiconductor film including nitrogen in a composition thereof on a substrate;
a step (b) of removing at least a portion of said compound semiconductor film located on a side surface of said substrate; and
a step (c) of removing said substrate after said step (b). - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A manufacturing method of a compound semiconductor wafer, comprising:
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a step (a) of depositing a film covering a top surface and a side surface of a substrate;
a step (b) of removing said film until at least the top surface of said substrate is exposed, thereby flattening said substrate and said film at the top to form a closed-ring protector film covering at least the side surface of said substrate;
a step (c) of conducting, after said step (b), epitaxial growth of a compound semiconductor film including nitrogen in a composition thereof on the top surface of said substrate at a region where it is not covered with said protector film; and
a step (d) of removing said substrate after said step (c), wherein said protector film formed in the step (b) has a function of interfering with the epitaxial growth of the compound conductor film formed in said step (c). - View Dependent Claims (21)
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Specification