System and method for modulated ion-induced atomic layer deposition (MII-ALD)
First Claim
1. A system for ion-induced deposition of a film onto a substrate, said system comprising:
- a main chamber containing a plasma generation chamber for generating a plasma;
said main chamber also containing a deposition chamber for depositing said film on said substrate;
a distribution showerhead located between said plasma generation chamber and said deposition chamber;
said plasma generation chamber coupled to receive at least one feed gas to form said plasma for generation of ions;
said plasma generation chamber also coupled to receive at least one feed gas to react with said plasma for generation of radicals; and
said deposition chamber coupled to receive at least one precursor gas to react with said ions and said radicals to form said film on said substrate.
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Abstract
The present invention relates to an enhanced sequential or non-sequential atomic layer deposition (ALD) apparatus and technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method; and, 4) providing a means of improved radical generation and delivery.
It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. [37 C.F.R. § 1.72(b)].
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Citations
73 Claims
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1. A system for ion-induced deposition of a film onto a substrate, said system comprising:
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a main chamber containing a plasma generation chamber for generating a plasma;
said main chamber also containing a deposition chamber for depositing said film on said substrate;
a distribution showerhead located between said plasma generation chamber and said deposition chamber;
said plasma generation chamber coupled to receive at least one feed gas to form said plasma for generation of ions;
said plasma generation chamber also coupled to receive at least one feed gas to react with said plasma for generation of radicals; and
said deposition chamber coupled to receive at least one precursor gas to react with said ions and said radicals to form said film on said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73)
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12. A system for isolating a plasma when depositing a film onto a substrate comprising:
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a main chamber containing a plasma generation chamber for generating said plasma and a deposition chamber for depositing said film;
a distribution showerhead located between said plasma generation chamber and said deposition chamber;
said plasma generation chamber coupled to receive at least one feed gas for ion generation and at least one feed gas for radical generation; and
said deposition chamber coupled to receive at least one precursor gas.
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46. A system for generating a plasma for depositing a film onto a substrate, said system comprising:
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a plasma generation source;
a plasma generation chamber coupled to said plasma generation source;
a deposition chamber; and
a distribution showerhead separating said plasma generation chamber from said deposition chamber.
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59. A method for depositing a film onto a substrate in an evacuated chamber comprising:
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introducing at least one ion generating feed gas into said chamber;
introducing at least one radical generating gas into said chamber;
generating a plasma;
generating ions from said ion generating feed gas and said plasma;
generating radicals from said radical generating gas and said plasma;
introducing at least one reactant gas into said chamber;
adsorbing at least one monolayer of said reactant gas on said substrate;
exposing said substrate to said ions and said radicals;
modulating said ions; and
reacting said monolayer with said ions and said radicals to deposit said film.
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Specification