Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor

• US 20020105009A1
• Filed: 07/12/2001
• Published: 08/08/2002
• Est. Priority Date: 07/13/2000
• Status: Abandoned Application

• Current Assignee: Isothermal Systems Research Inc.
• Original Assignee: Isothermal Systems Research Inc.
• Inventors: Smetana, Bruce A., Eden, Richard C.
• Application Number:
  US09/905,187
• Publication Number:
  US 20020105009A1
• Time in Patent Office: Days
• US Class Current: 257/138
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 23/4824 Pads with extended contours, e.g. grid structure, branch structure, finger structure
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 24/17 of a plurality of bump connectors
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/41725 Source or drain electrodes for field effect devices with monocrystalline semiconductor on source/drain region H01L29/0843
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/0101 : Neon [Ne]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01037 : Rubidium [Rb]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01043 : Technetium [Tc]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/01094 : Plutonium [Pu]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H02M 3/33507 : with automatic control of the output voltage or current, e.g. flyback converters H02M3/33561, H02M3/33569 take precedence
• CPC Class Codes: H02M 3/33576 : having at least one active switching element at the secondary side of an isolation transformer
• CPC Class Codes: H02M 3/33592 : having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
• CPC Class Codes: Y02B 70/10 : Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor are described. One exemplary aspect provides integrated circuitry including a monolithic semiconductive substrate; a power semiconductor switching device comprising a plurality of field effect transistors formed using the monolithic semiconductive substrate and having a plurality of electrical contacts including a plurality of gate contacts, a plurality of source contacts coupled in parallel and a plurality of drain contacts coupled in parallel; and auxiliary circuitry formed using the monolithic semiconductive substrate and configured to couple with at least one of the electrical contacts of the power field effect transistors

Claims

1. Integrated circuitry comprising:

a monolithic semiconductive substrate;

a power semiconductor switching device comprising a plurality of field effect transistors formed using the monolithic semiconductive substrate and having a plurality of electrical contacts including a plurality of gate contacts, a plurality of source contacts coupled in parallel and a plurality of drain contacts coupled in parallel; and

auxiliary circuitry formed using the monolithic semiconductive substrate and configured to couple with at least one of the electrical contacts of the power field effect transistors.

2. The circuitry of claim 1 wherein the field effect transistors comprise planar field effect transistors.

3. The circuitry of claim 1 wherein the auxiliary circuitry comprises a gate driver amplifier configured to provide a control signal to the electrical contacts of the field effect transistors comprising the gate contacts.

4. The circuitry of claim 1 wherein the auxiliary circuitry comprises a power converter controller configured to provide a control signal to the electrical contacts of the field effect transistors comprising the gate contacts.

5. The circuitry of claim 1 wherein the gate contacts are coupled in parallel.

6. The circuitry of claim 1 wherein the auxiliary circuitry comprises an application specific integrated circuit.

7. The circuitry of claim 1 wherein the auxiliary circuitry comprises a zero-current switching/timing circuit.

8. The circuitry of claim 1 wherein the auxiliary circuitry comprises a load protection circuit.

9. The circuitry of claim 1 wherein the auxiliary circuitry comprises an active snubber circuit.

10. The circuitry of claim 1 wherein the power semiconductor switching device and the auxiliary circuitry are formed upon a die.

11. The circuitry of claim 1 wherein the field effect transistors comprise MOSFET devices.

13. The method of claim 12 wherein providing comprises providing the substrate comprising a semiconductor die.

14. The method of claim 12 wherein the forming the power field effect transistor comprises forming a plurality of planar field effect transistors electrically coupled in parallel.

15. The method of claim 12 wherein the forming auxiliary circuitry comprises forming a gate driver amplifier configured to provide a control signal to a gate contact of the power field effect transistor.

16. The method of claim 12 wherein the forming auxiliary circuitry comprises forming a power converter controller configured to provide a control signal to a gate contact of the power field effect transistor.

17. The method of claim 12 wherein the forming auxiliary circuitry comprises forming the auxiliary circuitry comprising application specific integrated circuitry.

18. The method of claim 12 wherein the formings individually comprise forming the power field effect transistor and the auxiliary circuitry comprising CMOS devices.

19. The method of claim 12 wherein the forming auxiliary circuitry comprises forming the auxiliary circuitry comprising zero-current switching timing circuitry.

20. The method of claim 12 wherein the forming auxiliary circuitry comprises forming the auxiliary circuitry comprising active snubber circuitry.

21. The method of claim 12 wherein the forming auxiliary circuitry comprises forming the auxiliary circuitry comprising load protection circuitry.

22. The method of claim 12 wherein the forming the power field effect transistor comprises forming a plurality of MOSFET devices.

12. A method of forming a power transistor comprising:

providing a monolithic semiconductive substrate having a surface;

forming a power field effect transistor using the monolithic substrate and having a source contact and a drain contact adjacent to the surface; and

forming auxiliary circuitry using the monolithic semiconductive substrate, the forming comprising coupling the auxiliary circuitry with at least one contact of the power field effect transistor.