Semiconductor device and process for producing the same
First Claim
1. A semiconductor device including one or more intermetal insulating films, each intermetal insulating film containing at least silicon atoms, oxygen atoms, and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 14% or less.
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Accused Products
Abstract
An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
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Citations
33 Claims
- 1. A semiconductor device including one or more intermetal insulating films, each intermetal insulating film containing at least silicon atoms, oxygen atoms, and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 14% or less.
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5. A process for producing a semiconductor device comprising
a step of forming an intermetal insulating film using a mixed gas comprising a vapor of monomethyltriethoxysilane represented by the formula: - RSi(OR′
)3, wherein R is a methyl group and R′
is an ethyl group, and a non-oxidizing gas by means of a plasma chemical vapor deposition method, anda step of forming wires. - View Dependent Claims (6, 7, 8, 9)
- RSi(OR′
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10. A process for producing a semiconductor device which comprises
a step of forming an intermetal insulating film using a mixed gas comprising a vapor of methylethoxysilane represented by the formula: - RnSi(OR′
)4−
n, wherein R is a methyl group, R′
is an ethyl group, and n is 0 to 2, said vapor being mixed so as to make R 0.75 to 1.5 per silicon, and a non-oxidizing gas by means of a plasma chemical vapor deposition method, anda step of forming wires. - View Dependent Claims (11, 12, 13, 14, 16, 17, 18, 19)
- RnSi(OR′
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15. A process for producing a semiconductor device which comprises
a step of forming an intermetal insulating film using a mixed gas comprising (a) a vapor of monomethyltriethoxysilane represented by the formula: - RSi(OR′
)3, wherein R and R′
are each methyl group, or (b) a vapor of methylmethoxysilane represented by the formula;
RnSi(OR′
)4−
n, wherein R and R′
are each methyl group, and n is 0 to 2, said vapor being mixed so as to make R 0.75 to 1.5 per silicon, and a non-oxidizing gas by means of a plasma chemical vapor deposition method, anda step of forming wires.
- RSi(OR′
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20. A process for producing a semiconductor device which comprises
a step forming an intermetal insulating film containing at least silicon atoms, oxygen atoms, and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 14% or less, a step of forming one or more trenches or holes in the intermetal insulating film, a step of depositing a metal film so as to fill the trenches or holes, and a step of removing the metal film from portions other than insides of the trenches or holes by chemical-mechanical polishing process.
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22. A process for producing a semiconductor device which comprises
a step forming an intermetal insulating film containing at least silicon atoms, oxygen atoms, and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 10% or less, a step of forming one or more trenches or holes in the intermetal insulating film, a step of depositing a metal film so as to fill the trenches or holes, and a step of removing the metal film from portions other than insides of the trenches or holes by chemical-mechanical polishing process.
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24. A process for producing a semiconductor device which comprises
a step of forming a first wire by dry etching of a metal film, a step of forming a first insulating film containing at least silicon atoms, oxygen atoms, and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 14% or less, a step of forming a coated insulating film, a step of forming a second insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 14% or less, a step of forming holes in a stack comprising the first insulating film, the coated insulating film and the second insulating film so as to expose a surface of the first wire, a step of filling a metal film in the holes, and a step of removing the metal film from outside of the holes.
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26. A process for producing a semiconductor device which comprises
a step of forming a first wire by dry etching of a metal film, a step of forming a first insulating film containing at least silicon atoms, oxygen atoms, and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 10% or less, a step of forming a coated insulating film, a step of forming a second insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 10% or less, a step of forming holes in a stack comprising the first insulating film, the coated insulating film and the second insulating film so as to expose a surface of the first wire, a step of filling a metal film in the holes, and a step of removing the metal film from outside of the holes.
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28. A semiconductor device including one or more wiring layers, each layer having a plurality of inlaid wires and intermetal insulating films between individual inlaid wires, said intermetal insulating film being a single layer film of a low dielectric constant film having a dielectric constant lower than that of a silicon oxide film.
- 31. A semiconductor device including one or more wiring layers, each layer having a plurality of inlaid wires and intermetal insulating films between individual inlaid wires, said intermetal insulating film being a stack of a plurality of insulating films, the uppermost insulating film being a low dielectric constant film having a dielectric constant lower than that of a silicon oxide film.
Specification