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Sequential pulse deposition

  • US 20020110991A1
  • Filed: 02/13/2001
  • Published: 08/15/2002
  • Est. Priority Date: 02/13/2001
  • Status: Active Grant
First Claim
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1. A method of forming a film on a substrate, comprising:

  • flowing a precursor gas into a reaction chamber containing the substrate;

    flowing a reactant gas into the reaction chamber; and

    wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber.

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