Light emitting device

• US 20020113241A1
• Filed: 03/25/2002
• Published: 08/22/2002
• Est. Priority Date: 07/24/2000
• Status: Active Grant

• Current Assignee: Futaba Corporation
• Original Assignee: TDK Corporation
• Inventors: Kubota, Yuichi, Arai, Michio
• Granted Patent: US 6,781,148 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H05B 33/04 Sealing arrangements , e.g. against humidity
• CPC Class Codes: H05B 33/10 Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

The invention aims to provide a light emitting device comprising a base material or protective member which has improved light transmittance, heat resistance, passivation (gas barrier, oligomer release prevention and minimized outgassing), anti-water or moisture-absorption, stability against chemical degradation, dimensional and shape stability, anti-surface-reflection, electrical insulation, UV degradation resistance, and weather resistance, and is highly productive due to possible film formation under atmospheric pressure, and hence, a light emitting device featuring high reliability, ease of manufacture and low cost. The object is attained by a light emitting device comprising a base material (1) having flexibility, light transparency and heat resistance, a lower electrode (4) having light transmittance, a light emitting layer (4), and an upper electrode (4) formed on the base material, the device further comprising a silica film and/or a siliceous film (3) which is formed on the substrate side as viewed from the light emitting layer (4) or on opposite sides of the substrate by applying polysilazane and subjecting it to oxidative treatment.

Claims

1. A light emitting device comprising a base material having at least light transparency and heat resistance, a lower electrode having light transmittance, a light emitting layer, and an upper electrode formed on the base material,

said device further comprising a silica film and/or a siliceous film which is formed on the substrate side as viewed from the light emitting layer or on opposite sides of the substrate by applying polysilazane and subjecting it to oxidative treatment.

2. The light emitting device of claim 1 wherein said base material is formed of a glass or resin material.

3. The light emitting device of claim 1 wherein the silica film and/or the siliceous film is disposed at least between said base material and said light emitting layer.

4. The light emitting device of claim 3 wherein TFT'"'"'s are formed on said base material and the light emitting layer is disposed on the TFT'"'"'s.

5. The light emitting device of claim 1 wherein the silica film and/or the siliceous film is disposed at least on opposite sides of the substrate.

6. The light emitting device of claim 1 wherein the silica film and/or the siliceous film has been subjected to oxidative treatment under heated and/or humidified conditions.

7. The light emitting device of claim 1 wherein said polysilazane and/or a modified product thereof has a structural unit of the following structural formula:

8. The light emitting device of claim 7 wherein the total number of carbon atoms in the alkyl groups is up to 6.

9. The light emitting device of claim 7 or 8 wherein said silica film and/or said siliceous film is obtained by converting a polysilazane having a number average molecular weight of 100 to 50,000 and/or a modified product thereof into a ceramic.

10. The light emitting device of claim 1 which is an EL device.