Method of tisin deposition using a chemical vapor deposition process

• US 20020114886A1
• Filed: 12/21/2001
• Published: 08/22/2002
• Est. Priority Date: 07/06/1995
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kao, Chien-Teh, Chang, Mei, Chen, Fufa, Lai, Chiukin Steven, Mosely, Roderick Craig, Chou, Jing-Pei
• Application Number:
  US10/026,378
• Publication Number:
  US 20020114886A1
• Time in Patent Office: Days
• US Class Current: 427/255.391
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4581 characterised by material of construction or surface finish of the means for supporting the substrate
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: C23C 16/481 by radiant heating of the substrate
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 2237/336 Changing physical properties of treated surfaces
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01L 21/28512 on semiconductor bodies comprising elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76856 by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/76862 Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
• CPC Class Codes: H01L 21/76864 Thermal treatment

Abstract

A method of forming a titanium silicide nitride (TiSiN) layer is described. A titanium nitride (TiN) layer is deposited on a substrate, the process chamber is purged to remove reaction by-products therefrom and than the titanium nitride (TiN) layer is exposed to a silicon-containing gas to form the titanium suicide nitride (TiSiN) layer. Alternatively, the substrate may be exposed to the silicon-containing gas in a process chamber different from the one used for the titanium nitride (TiN) layer deposition.

Claims

1. A method of film deposition, comprising:

forming a titanium nitride (TiN) layer on a substrate in a process chamber;

removing reaction by-products generated during titanium nitride (TiN) layer formation from the process chamber; and

exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer.

2. The method of claim 1 wherein the reaction by-products are removed from the process chamber by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.

3. The method of claim 2 wherein the purge gas comprises one or more gases selected from the group consisting of nitrogen (N₂), hydrogen (H₂), helium (He), argon (Ar), neon (Ne) and xenon (Xe).

4. The method of claim 2 wherein the purge gas is provided to the process chamber for up to about 5 minutes.

5. The method of claim 1 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl₄) and ammonia (NH₃).

6. The method of claim 1 wherein the silicon-containing gas is selected from the group consisting of silane (SiH₄) and disilane (Si₂H₆).

7. The method of claim 6 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H₂), nitrogen (N₂), argon (Ar) and helium (He).

8. The method of claim 7 wherein the silicon-containing gas is mixed with hydrogen (H₂).

9. The method of claim 8 wherein the ratio of the silicon-containing gas to the hydrogen (H₂) is greater than 1.

10. The method of claim 1 further comprising treating the titanium nitride (TiN) layer with a hydrogen-containing plasma prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas.

11. The method of claim 10 wherein the titanium nitride (TiN) layer is treated after reaction by-products generated during titanium nitride (TiN) layer formation are removed from the process chamber.

12. The method of claim 10 wherein the titanium nitride (TiN) layer is treated before reaction by-products generated during titanium nitride (TiN) layer formation are removed from the process chamber.

13. The method of claim 10 wherein the hydrogen-containing plasma is generated by applying an electric field to a gas mixture comprising one or more gases selected from the group consisting of hydrogen (H₂), ammonia (NH₃), hydrazine (N₂H₄), nitrogen (N₂), argon (Ar) and helium (He).

14. The method of claim 10 wherein the titanium nitride (TiN) layer is treated with the hydrogen-containing plasma for about 5 seconds to about 100 seconds.

16. The method of claim 15 wherein the reaction by-products are removed from the process chamber in steps (b) and (d) by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.

17. The method of claim 16 wherein the purge gas comprises one or more gases selected from the group consisting of nitrogen (N₂), hydrogen (H₂), helium (He), argon (Ar), neon (Ne) and xenon (Xe).

18. The method of claim 16 wherein the purge gas is provided to the process chamber for up to about 5 minutes.

19. The method of claim 15 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl₄) and ammonia (NH₃).

20. The method of claim 15 wherein the silicon-containing gas is selected from the group consisting of silane (SiH₄) and disilane (Si₂H₆).

21. The method of claim 20 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H₂), nitrogen (N₂), argon (Ar) and helium (He).

22. The method of claim 21 wherein the silicon-containing gas is mixed with hydrogen (H₂).

23. The method of claim 22 wherein the ratio of the silicon-containing gas to the hydrogen (H₂) is greater than 1.

24. The method of claim 15 wherein the hydrogen-containing plasma is generated by applying an electric field to a gas mixture comprising one or more gases selected from the group consisting of hydrogen (H₂), ammonia (NH₃), hydrazine (N₂H₄), nitrogen (N₂), argon (Ar) and helium (He).

25. The method of claim 15 wherein the titanium nitride (TiN) layer is treated with the hydrogen-containing plasma for about 5 seconds to about 100 seconds.

27. The method of claim 26 wherein the reaction by-products are removed from the process chamber by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.

28. The method of claim 27 wherein the purge gas comprises one or more gases selected from the group consisting of nitrogen (N₂), hydrogen (H₂), helium (He), argon (Ar), neon (Ne) and xenon (Xe).

29. The method of claim 27 wherein the purge gas is provided to the process chamber for up to about 5 minutes.

30. The method of claim 26 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl₄) and ammonia (NH₃).

31. The method of claim 26 wherein the silicon-containing gas is selected from the group consisting of silane (SiH₄) and disilane (Si₂H₆).

32. The method of claim 31 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H₂), nitrogen (N₂), argon (Ar) and helium (He).

33. The method of claim 32 wherein the silicon-containing gas is mixed with hydrogen (H₂).

34. The method of claim 33 wherein the ratio of the silicon-containing gas to the hydrogen (H₂) is greater than 1.

35. The method of claim 26 further comprising treating the titanium nitride (TiN) layer with a hydrogen-containing plasma prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas.

36. The method of claim 35 wherein the titanium nitride (TiN) layer is treated after reaction by-products generated during titanium nitride (TiN) layer formation are removed from the process chamber.

37. The method of claim 35 wherein the titanium nitride (TiN) layer is treated before reaction by-products generated during titanium nitride (TiN) layer formation are removed from the process chamber.

38. The method of claim 35 wherein the hydrogen-containing plasma is generated by applying an electric field to a gas mixture comprising one or more gases selected from the group consisting of hydrogen (H₂), ammonia (NH₃), hydrazine (N₂H₄), nitrogen (N₂), argon (Ar) and helium (He).

39. The method of claim 35 wherein the titanium nitride (TiN) layer is treated with the hydrogen-containing plasma for about 5 seconds to about 100 seconds.

15. A method of film deposition, comprising:

(a) forming a titanium nitride (TiN) layer on a substrate in a process chamber;

(b) removing reaction by-products generated during titanium nitride (TiN) layer formation from the process chamber;

(c) treating the titanium nitride (TiN) layer with a hydrogen-containing plasma;

(d) removing reaction by-products generated during titanium nitride (TiN) layer formation from the process chamber; and

(e) exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer.

26. A method of forming a barrier layer for use in integrated circuit fabrication, comprising:

forming a titanium nitride (TiN) layer on a substrate in a process chamber;

removing reaction by-products generated during titanium nitride (TiN) layer formation from the process chamber;

exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer; and

forming a metal layer on the titanium silicide nitride (TiSiN) layer.

40. A method of film deposition, comprising:

forming a titanium nitride (TiN) layer on a substrate in a first process chamber;

moving the substrate with the titanium nitride (TiN) layer thereon into a second process chamber different from the first process chamber; and

exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer.

41. The method of claim 40 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl₄) and ammonia (NH₃).

42. The method of claim 40 wherein the silicon-containing gas is selected from the group consisting of silane (SiH₄) and disilane (Si₂H₆).

43. The method of claim 42 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H₂), nitrogen (N₂), argon (Ar) and helium (He).

44. The method of claim 43 wherein the silicon-containing gas is mixed with hydrogen (H₂).

45. The method of claim 44 wherein the ratio of the silicon-containing gas to the hydrogen (H₂) is greater than 1.

46. The method of claim 40 further comprising treating the titanium nitride (TiN) layer with a hydrogen-containing plasma prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas.

47. The method of claim 46 wherein the titanium nitride (TiN) layer is treated after moving the substrate into the second process chamber.

48. The method of claim 46 wherein the titanium nitride (TiN) layer is treated before moving the substrate into the second process chamber.

49. The method of claim 46 wherein the hydrogen-containing plasma is generated by applying an electric field to a gas mixture comprising one or more gases selected from the group consisting of hydrogen (H₂), ammonia (NH₃), hydrazine (N₂H₄), nitrogen (N₂), argon (Ar) and helium (He).

50. The method of claim 46 wherein the titanium nitride (TiN) layer is treated with the hydrogen-containing plasma for about 5 seconds to about 100 seconds.

51. A method of film deposition, comprising:

(a) forming a titanium nitride (TiN) layer on a substrate in a first process chamber;

(b) removing reaction by-products generated during titanium nitride (TiN) layer formation from the first process chamber;

(c) treating the titanium nitride (TiN) layer with a hydrogen-containing plasma;

(d) moving the substrate with the titanium nitride (TiN) layer thereon into a second process chamber different from the first process chamber; and

(e) exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer.

52. The method of claim 51 wherein the reaction by-products are removed from the first process chamber in step (b) by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.

53. The method of claim 52 wherein the purge gas comprises one or more gases selected from the group consisting of nitrogen (N₂), hydrogen (H₂), helium (He), argon (Ar), neon (Ne) and xenon (Xe).

54. The method of claim 52 wherein the purge gas is provided to the process first chamber for up to about 5 minutes.

55. The method of claim 51 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl₄) and ammonia (NH₃).

56. The method of claim 51 wherein the silicon-containing gas is selected from the group consisting of silane (SiH₄) and disilane (Si₂H₆).

57. The method of claim 56 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H₂), nitrogen (N₂), argon (Ar) and helium (He).

58. The method of claim 57 wherein the silicon-containing gas is mixed with hydrogen (H₂).

59. The method of claim 58 wherein the ratio of the silicon-containing gas to the hydrogen (H₂) is greater than 1.

60. The method of claim 51 wherein the hydrogen-containing plasma is generated by applying an electric field to a gas mixture comprising one or more gases selected from the group consisting of hydrogen (H₂), ammonia (NH₃), hydrazine (N₂H₄), nitrogen (N₂), argon (Ar) and helium (He).

61. The method of claim 51 wherein the titanium nitride (TiN) layer is treated with the hydrogen-containing plasma for about 5 seconds to about 100 seconds.

62. A method of forming a barrier layer for use in integrated circuit fabrication, comprising:

forming a titanium nitride (TiN) layer on a substrate in a first process chamber;

moving the substrate with the titanium nitride (TiN) layer thereon into a second process chamber different from the first process chamber;

exposing the titanium nitride (TiN) layer to a silicon-containing gas to convert the titanium nitride (TiN) layer to a titanium silicide nitride (TiSiN) layer; and

forming a metal layer on the titanium silicide nitride (TiSiN) layer.

63. The method of claim 62 wherein the titanium nitride (TiN) layer is formed from a reaction of titanium tetrachloride (TiCl₄) and ammonia (NH₃).

64. The method of claim 62 wherein the silicon-containing gas is selected from the group consisting of silane (SiH₄) and disilane (Si₂H₆).

65. The method of claim 64 wherein the silicon-containing gas is mixed with one or more gases selected from the group consisting of hydrogen (H₂), nitrogen (N₂), argon (Ar) and helium (He).

66. The method of claim 65 wherein the silicon-containing gas is mixed with hydrogen (H₂).

67. The method of claim 66 wherein the ratio of the silicon-containing gas to the hydrogen (H₂) is greater than 1.

68. The method of claim 62 further comprising treating the titanium nitride (TiN) layer with a hydrogen-containing plasma prior to exposing the titanium nitride (TiN) layer to the silicon-containing gas.

69. The method of claim 68 wherein the titanium nitride (TiN) layer is treated after the substrate with the titanium nitride (TiN) layer thereon is moved into the second process chamber.

70. The method of claim 68 wherein the titanium nitride (TiN) layer is treated before the substrate with the titanium nitride (TiN) layer thereon is moved into the second process chamber.

72. The method of claim 68 wherein the hydrogen-containing plasma is generated by applying an electric field to a gas mixture comprising one or more gases selected from the group consisting of hydrogen (H₂), ammonia (NH₃), hydrazine (N₂H₄), nitrogen (N₂), argon (Ar) and helium (He).

73. The method of claim 68 wherein the titanium nitride (TiN) layer is treated with the hydrogen-containing plasma for about 5 seconds to about 100 seconds.