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Atomically thin highly resistive barrier layer in a copper via

  • US 20020117399A1
  • Filed: 02/23/2001
  • Published: 08/29/2002
  • Est. Priority Date: 02/23/2001
  • Status: Abandoned Application
First Claim
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1. A process of filling copper into a vertical interconnection hole extending through an inter-level dielectric layer formed in a substrate and having sides and a bottom, comprising the steps of:

  • coating sides and a bottom of said hole with a barrier layer of a metal oxide or nitride having an electrical resistivity greater than 500 microohm-cm;

    sputtering a copper target opposed to said substrate under conditions such that a copper layer is deposited on said sides of said hole while simultaneously said barrier layer is removed from said bottom of said hole; and

    then electroplating copper into said hole.

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