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Cleaning of multicompositional etchant residues

  • US 20020117472A1
  • Filed: 02/23/2001
  • Published: 08/29/2002
  • Est. Priority Date: 02/23/2001
  • Status: Active Grant
First Claim
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1. A substrate processing apparatus comprising:

  • a chamber comprising a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas;

    a controller to operate the substrate support, gas supply, gas energizer, and gas exhaust, to set (i) etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber, and (ii) cleaning process conditions in the chamber to clean the etchant residues, the process conditions comprising a volumetric flow ratio of O2 to CF4 of from about 1;

    1 to about 1;

    40.

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