X-ray image sensor and method for fabricating the same
First Claim
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1. An X-ray image sensor, comprising:
- a substrate;
a gate electrode on the substrate;
a first insulation film on the substrate that covers the gate electrode;
an amorphous silicon film formed on the first insulation film over the gate electrode;
a doped amorphous silicon film defining a channel region for the amorphous silicon film on the amorphous silicon film;
source and drain electrodes on the doped amorphous silicon film that are spaced apart from each other;
a ground line on the first insulation film and that is spaced apart from the source and gate electrodes;
a second insulation film covering the ground line, the source and drain electrodes, amorphous silicon film, the channel region, and the first insulation film, the second insulation film including a first contact hole that exposes a portion of the ground line and a second contact hole that exposes a portion of the source electrode;
a first capacitor electrode on the second insulation film, the first capacitor electrode having an electrical connection with the ground line through the first contact hole;
an electron transport electrode on the second insulation film, the electron transport electrode having an electrical connection with the source electrode through the second contact X hole;
a dielectric layer covering the second insulation film, the first capacitor electrode, and the electron transport electrode, the dielectric layer having a third contact hole that exposes a portion of the electron transport electrode; and
a second capacitor electrode on the dielectric layer, the second capacitor electrode having an electrical connection with the electron transport electrode through the third contact hole.
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Accused Products
Abstract
An X-ray image sensor having a photoelectric conversion part that converts X-ray photons into electric charges. The X-ray image sensor includes a pixel electrode for collecting the electric charges and a storage capacitor for storing the electric charges collected by the pixel electrode. The storage capacitor includes a first capacitor electrode, the pixel electrode, and a dielectric layer that is deposited on the first capacitor electrode. The pixel electrode contacts an electron transport electrode via a hole through the dielectric layer. A switching TFT controls the release of electric charges in the storage capacitor to an external circuit. The switching TFT is comprised of a gate electrode, a first insulation film, a drain electrode, and a source electrode that contacts the electron transport electrode.
55 Citations
16 Claims
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1. An X-ray image sensor, comprising:
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a substrate;
a gate electrode on the substrate;
a first insulation film on the substrate that covers the gate electrode;
an amorphous silicon film formed on the first insulation film over the gate electrode;
a doped amorphous silicon film defining a channel region for the amorphous silicon film on the amorphous silicon film;
source and drain electrodes on the doped amorphous silicon film that are spaced apart from each other;
a ground line on the first insulation film and that is spaced apart from the source and gate electrodes;
a second insulation film covering the ground line, the source and drain electrodes, amorphous silicon film, the channel region, and the first insulation film, the second insulation film including a first contact hole that exposes a portion of the ground line and a second contact hole that exposes a portion of the source electrode;
a first capacitor electrode on the second insulation film, the first capacitor electrode having an electrical connection with the ground line through the first contact hole;
an electron transport electrode on the second insulation film, the electron transport electrode having an electrical connection with the source electrode through the second contact X hole;
a dielectric layer covering the second insulation film, the first capacitor electrode, and the electron transport electrode, the dielectric layer having a third contact hole that exposes a portion of the electron transport electrode; and
a second capacitor electrode on the dielectric layer, the second capacitor electrode having an electrical connection with the electron transport electrode through the third contact hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating an X-ray image sensor, comprising:
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forming a gate electrode on a substrate;
forming a first insulation film over the substrate and the gate electrode;
forming an amorphous silicon film on the first insulation film and over the gate electrode;
forming a doped amorphous silicon film on the amorphous silicon film;
forming source and drain electrodes on the doped amorphous silicon film such that the source and drain electrodes are spaced apart from each other;
forming a channel region on the amorphous silicon layer by eliminating the doped amorphous silicon film between the source and drain electrodes;
forming a ground line on the first insulation film such that the ground line is spaced from the source and gate electrodes;
forming a second insulation film over the ground line, the channel region, the source and drain electrodes, and the first insulation film;
forming first and second contact holes through the second insulation film such that a portion of the ground line is exposed by the first contact hole and a portion of the source electrode is exposed by the second contact hole;
forming a first capacitor electrode on the second insulation film such that the first capacitor electrode is electrically connected to the ground line through the first contact hole;
forming an electron transport electrode on the second insulation film, the electron transport electrode having an electrical connection with the source electrode through the second contact hole;
forming a dielectric layer over the second insulation film, the first capacitor electrode and the electron transport electrode;
forming a third contact hole through the dielectric layer;
forming a second capacitor electrode on the dielectric layer such that the second capacitor electrode has an electrical connection with the electron transport electrode through the third contact hole;
forming a light-sensitive material on the pixel electrode; and
forming an X-ray transparent conductive electrode on the light-sensitive material . - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification
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Current AssigneeLG Display Co., Ltd.
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Original AssigneeJong-Sung Kim
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InventorsKim, Jong-Sung
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/59
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CPC Class CodesH01L 27/14609 Pixel-elements with integra...H01L 27/14676 X-ray, gamma-ray or corpusc...H01L 27/1469 Assemblies, i.e. hybrid int...H01L 27/14692 Thin film technologies, e.g...
