Semiconductor light-emitting device and process for producing the same
First Claim
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1. A semiconductor light-emitting device comprising:
- a substrate including a substrate surface positioned along a substrate surface plane;
a crystal layer including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane; and
a first conductive layer, an active layer, and a second conductive layer each formed along at least a portion of the crystal surface.
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Abstract
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
97 Citations
82 Claims
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1. A semiconductor light-emitting device comprising:
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a substrate including a substrate surface positioned along a substrate surface plane;
a crystal layer including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane; and
a first conductive layer, an active layer, and a second conductive layer each formed along at least a portion of the crystal surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 17, 19, 20, 21)
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15. An image display unit comprising:
a plurality of semiconductor light-emitting devices arranged so as to emit light in response to a signal, each of the semiconductor light-emitting devices comprising a substrate including a substrate surface positioned along a substrate surface plane, a crystal layer including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane, and a first conductive layer, an active layer, and a second conductive layer each formed along at least a portion of the crystal surface.
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16. A lighting system comprising:
a plurality of semiconductor light-emitting devices, each of the semiconductor light-emitting devices comprising a substrate including a substrate surface positioned along a substrate surface plane, a crystal layer including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane, and a first conductive layer, an active layer, and a second conductive layer each formed along at least a portion of the crystal surface.
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18. A process for producing a semiconductor light-emitting device, the process comprising the steps of:
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providing a substrate including a substrate surface oriented along a substrate surface plane;
forming a crystal seed layer on the substrate surface;
forming a masking layer on the crystal seed layer, wherein the masking layer includes an opening;
forming a crystal layer by selective growth of the crystal seed layer through the opening of the masking layer, wherein the crystal layer includes a crystal layer surface oriented along a crystal layer plane that diagonally intersects the substrate surface; and
forming each of a first conductive layer, an active layer, and a second conductive layer along at least a portion of the crystal layer surface.
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22. A semiconductor light-emitting device comprising:
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a substrate including a substrate surface positioned along a substrate surface plane;
a crystal layer including a crystal layer surface oriented along a crystal surface plane defined as a S-plane which diagonally intersects the substrate surface plane;
and a layer of a first conductivity type, an active layer, and a layer of a second conductivity type each formed along the S-plane. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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31. A semiconductor light-emitting device comprising:
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a substrate including a substrate surface positioned along a substrate surface plane;
a crystal layer comprising an approximately hexagonal pyramid, having a face oriented along an S-plane that diagonally intersects the substrate surface plane; and
a layer of a first conductivity type, an active layer, and a layer of a second conductivity type each formed along at least a portion of the approximately hexagonal pyramid. - View Dependent Claims (32)
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33. A semiconductor light-emitting device comprising:
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a substrate including a substrate surface positioned along a substrate surface plane;
a crystal layer comprising an approximately hexagonal prismoid, having a face oriented about an S-plane, and a top region oriented about a C-plane; and
a layer of a first conductivity type, an active layer, and a layer of a second conductivity type each formed along at least a portion of the approximately hexagonal prismoid. - View Dependent Claims (36, 38, 39, 40)
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34. An image display unit comprising:
a plurality of semiconductor light-emitting devices arranged so as to emit light in response to a signal, each of the semiconductor light-emitting devices comprising a substrate including a substrate surface positioned along a substrate surface plane, a crystal layer including a crystal surface oriented along a crystal surface plane defined as a S-plane which diagonally intersects the substrate surface plane, and a first conductive layer, an active layer, and a second conductive layer each formed along at least a portion of the crystal surface.
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35. A lighting system comprising:
a plurality of semiconductor light-emitting devices, each of the semiconductor light-emitting devices comprising a substrate including a substrate surface positioned along a substrate surface plane, a crystal layer including a crystal surface oriented along a crystal surface plane defined as a S-plane which diagonally intersects the substrate surface plane, and a first conductive layer, an active layer, and a second conductive layer each formed along at least a portion of the crystal surface.
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37. A process for producing a semiconductor light-emitting device, the process comprising the steps:
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providing a substrate including a substrate surface oriented along a substrate surface plane;
forming a masking layer on the substrate, wherein the masking layer includes an opening;
forming a crystal layer by selective growth through the opening of the masking layer, wherein the crystal layer includes a crystal layer surface oriented along a crystal layer plane defined as a S-plane which diagonally intersects the substrate surface plane; and
forming each of a first conductive layer, an active layer, and a second conductive layer along at least a portion of the crystal layer surface.
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41. A semiconductor light-emitting device comprising:
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a substrate including a substrate surface positioned along a substrate surface plane;
a crystal grown layer formed by selective growth and including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane;
an active layer which is formed along at least a portion of the crystal grown layer that emits light upon injection of an amount of current;
and a reflecting region which is formed substantially parallel to the crystal surface plane and reflects at least a portion of the light emerging from the active layer. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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52. A process for producing a semiconductor light-emitting device, the process comprising the steps of:
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providing a substrate including a substrate surface oriented along a substrate surface plane;
selectively growing a crystal layer including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane;
forming an active layer approximately parallel to the crystal surface plane; and
forming a reflecting region substantially parallel to the crystal surface plane.
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53. A semiconductor light-emitting device comprising:
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a substrate including a substrate surface oriented along a substrate surface plane;
a first grown layer including a first grown layer conductivity type formed on the substrate;
a masking layer formed on the first grown layer;
a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane;
a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane;
an active layer; and
a second cladding layer including a second cladding layer conductivity type, wherein at least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening. - View Dependent Claims (54, 55, 56, 57, 58, 60)
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59. A semiconductor light-emitting device comprising:
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a substrate;
a first grown layer including a first grown layer conductivity type formed on the substrate;
a masking layer formed on the first grown layer;
a second grown layer including a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane;
a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane;
an active layer; and
a second cladding layer including a second cladding layer conductivity type, wherein the first cladding layer, the active layer, and the second cladding layer are formed as to substantially cover the second grown layer.
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61. A semiconductor light-emitting device comprising:
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a substrate;
a first grown layer of a first grown layer conductivity type formed on the substrate;
a masking layer formed on the first grown layer;
a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane;
a first cladding layer of a first cladding layer conductivity type formed along at least a portion of the crystal surface plane;
an active layer; and
a second cladding layer of a second cladding layer conductivity type, wherein the first cladding layer, the active layer, and the second cladding layer are formed substantially parallel to the crystal surface plane such that an end region of at least one of the first cladding layer, the active layer, and the second cladding layer contacts the masking layer. - View Dependent Claims (62)
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63. An image display unit comprising:
a plurality of semiconductor light-emitting devices arranged so as to emit light in response to a signal, each of the semiconductor light-emitting devices comprising a substrate, a first grown layer of a first conductivity type formed on the substrate, a masking layer formed on the first grown layer, a second grown layer of the first conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane, a first cladding layer of the first conductivity type formed along at least a portion of the crystal surface plane, an active layer, and a second cladding layer of a second conductivity type, wherein the first cladding layer, the active layer, and the second cladding layer are formed substantially parallel to the crystal surface plane such that an end region of at least one of the first cladding layer, the active layer, and the second cladding layer extends to the masking layer in proximity to the opening.
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64. A lighting system comprising:
a plurality of semiconductor light-emitting devices, each of the semiconductor light-emitting devices comprising a substrate, a first grown layer including a first conductivity type formed on the substrate, a masking layer formed on the first grown layer, a second grown layer including the first conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane, a first cladding layer including the first conductivity type formed along at least a portion of the crystal surface plane, an active layer, and a second cladding layer of a second conductivity type, wherein the first cladding layer, the active layer, and the second cladding layer are formed substantially parallel to the crystal surface plane such that an end region of at least one of the first cladding layer, the active layer, and the second cladding layer extends to the masking layer in proximity to the opening. - View Dependent Claims (65)
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66. A process for producing a semiconductor light-emitting device, the process comprising the steps of:
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providing a substrate including a substrate surface oriented along a substrate surface plane;
forming a first grown layer on the substrate;
forming a masking layer having an opening on the first grown layer;
selectively growing a second grown layer through the opening in the masking layer, wherein the second grown layer includes a crystal surface oriented along a crystal surface plane; and
forming a cladding layer of a first conductivity type, an active layer, and a cladding layer of a second conductivity type each substantially parallel to the crystal surface plane extending to the masking layer in proximity of the opening. - View Dependent Claims (67, 69, 70, 71, 72, 73, 74, 75, 76, 77)
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68. A semiconductor light-emitting device comprising:
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a substrate including a substrate surface oriented along a substrate surface plane; and
an active layer formed along at least a portion of a selectively grown crystal layer via a window region along the substrate surface plane such as to be disposed between a first conductive layer and a second conductive layer and oriented along an active layer plane that is not parallel to the substrate surface plane, and wherein an area of the active layer is larger than at least one of an area of the window region and a projected area of the crystal layer derived from projecting the crystal layer to the substrate surface plane in a normal direction.
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78. A semiconductor light-emitting device comprising
a substrate including a substrate surface oriented along a substrate surface plane; - and
an active layer formed by selective growth such as to be disposed between a first conductive layer and a second conductive layer and oriented along an active layer plane that is not parallel to the substrate surface plane, and wherein a portion of the active layer is directed away from the active layer plane towards the substrate.
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79. A semiconductor light-emitting device comprising:
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a substrate including a substrate surface oriented along a substrate surface plane; and
an active layer formed along at least a portion of a selectively grown crystal layer such as to be disposed between a first conductive layer and a second conductive layer and oriented along an active layer plane that is not parallel to the substrate surface plane, and wherein an area of the active layer greater than or equal to a sum of a projected area of the crystal layer derived from projecting the crystal layer to the substrate in a normal direction and an area in which at least one of the conductive layers contacts a respective electrode formed on the substrate.
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80. A process for producing a semiconductor light-emitting device, the process comprising the steps of:
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forming an underlying layer on a substrate;
forming a masking layer having a window region on the underlying layer;
selectively growing a crystal grown layer through the window region; and
forming a first conductive layer, an active layer, and a second conductive layer on a surface of the crystal grown layer, wherein the active layer includes a crystal surface with a surface area larger than a projected area derived from projecting the crystal surface toward the substrate in a normal direction.
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81. A process for producing a semiconductor light-emitting device, the process comprising the steps of:
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providing a first substrate including a first substrate surface oriented along a first substrate surface plane;
forming a crystal seed layer on the first substrate surface;
forming a masking layer on the crystal seed layer, wherein the masking layer includes an opening;
forming a crystal layer by selective growth of the crystal seed layer through the opening of the masking layer, wherein the crystal layer includes a crystal layer surface oriented along a crystal layer plane that diagonally intersects the first substrate surface plane;
forming each of a first conductive layer, an active layer, and a second conductive layer along at least a portion of the crystal layer surface;
embedding each of the first conductive layer, the active layer and the second conductive layer and the second conductive layer in a resin material layer formed on a second substrate;
removing the second substrate by laser abrasion;
separating the crystal seed layer and masking layer from a substrate region of the substrate; and
forming an electrode on at least a portion of the substrate region.
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82. The method as claimed in 81, wherein the crystal seed layer and the masking layer are separated by peeling off.
Specification