Surface mountable chip type semiconductor device and manufacturing method

• US 20020117762A1
• Filed: 02/25/2002
• Published: 08/29/2002
• Est. Priority Date: 02/27/2001
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Ikegami, Gorou
• Granted Patent: US 6,608,372 B2
• Time in Patent Office: Days
• US Class Current: 257/782
• CPC Class Codes: H01L 23/3157 Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A surface mountable chip type semiconductor device comprises: first and second conductive land areas which are formed on an insulating substrate and which are electrically coupled with each other; a conductive post formed on the first conductive land area; and a semiconductor pellet which has electrodes on both sides thereof and which is mounted on the second conductive land area. A main area of the insulating substrate including the conductive post and the semiconductor pellet is encapsulated by encapsulation resin. Top portions of the conductive post and an external electrode electrically coupled to the semiconductor pellet are exposed from the encapsulation resin. Top surfaces of the conductive post and the external electrode are approximately coplanar with each other.

Claims

1. A chip type semiconductor device comprising:

an insulating substrate;

first and second conductive land areas which are formed on said insulating substrate and which are electrically coupled with each other;

a conductive post formed on said first conductive land area;

a semiconductor pellet which has electrodes on both sides thereof and which is mounted on said second conductive land area, said electrode on one side of said semiconductor pellet being coupled onto said second conductive land area and said electrode on the other side of said semiconductor pellet having an external electrode electrically coupled thereto; and

encapsulation resin portion which encapsulates a main area of said insulating substrate including said conductive post and said semiconductor pellet, wherein top portions of said conductive post and said external electrode electrically coupled to said semiconductor pellet being exposed from said encapsulation resin portion.

2. A chip type semiconductor device as set forth in claim 1, wherein said conductive post and said external electrode electrically coupled to said semiconductor pellet are disposed such that top surfaces of said conductive post and said external electrode become approximately coplanar with each other.

3. A chip type semiconductor device as set forth in claim 1, wherein said conductive post is a column shaped conductive block member.

4. A chip type semiconductor device as set forth in claim 3, wherein said column shaped conductive block member is coupled to said first conductive land area via conductive adhesive.

5. A chip type semiconductor device as set forth in claim 3, wherein said column shaped conductive block member is coupled to said first conductive land area by using ultrasonic bonding.

6. A chip type semiconductor device as set forth in claim 1, wherein said conductive post comprises a conductive member which is formed by plating.

7. A chip type semiconductor device as set forth in claim 1, wherein said conductive post comprises a conductive member which is formed by using conductive adhesive.

8. A chip type semiconductor device as set forth in claim 1, wherein said first and second conductive land areas are formed by a common conductive land portion which is partitioned by a resist film into said first and second conductive land areas.

9. A chip type semiconductor device as set forth in claim 1, wherein said external electrode electrically coupled with said semiconductor pellet is a flat board shaped conductive member joined onto said electrode of said semiconductor pellet.

10. A chip type semiconductor device as set forth in claim 1, wherein said external electrode electrically coupled with said semiconductor pellet is a hemispherical conductive member joined onto said electrode of said semiconductor pellet.

11. A chip type semiconductor device as set forth in claim 1, wherein said second conductive land area has a concave portion in which said semiconductor pellet is mounted.

13. A method of manufacturing a chip type semiconductor device as set forth in claim 12, wherein said conductive post and said external electrode electrically coupled to said semiconductor pellet are disposed such that top surfaces of said conductive post and said external electrode become approximately coplanar with each other.

14. A method of manufacturing a chip type semiconductor device as set forth in claim 12, wherein said conductive post is a column shaped conductive block member and, in said forming a conductive post on said first conductive land area, said column shaped conductive block member is coupled to said first conductive land area via conductive adhesive.

15. A method of manufacturing a chip type semiconductor device as set forth in claim 12, wherein said conductive post is a column shaped conductive block member and, in said forming a conductive post on said first conductive land area, said column shaped conductive block member is coupled to said first conductive land area by using ultrasonic bonding.

16. A method of manufacturing a chip type semiconductor device as set forth in claim 12, wherein said conductive post is formed by plating.

17. A method of manufacturing a chip type semiconductor device as set forth in claim 12, wherein said conductive post is formed by using conductive adhesive.

18. A method of manufacturing a chip type semiconductor device as set forth in claim 12, wherein said first and second conductive land areas are formed by a common conductive land portion which is partitioned by a resist film into said first and second conductive land areas.

19. A method of manufacturing a chip type semiconductor device as set forth in claim 12, wherein said external electrode electrically coupled with said semiconductor pellet is a flat board shaped conductive member joined onto said electrode of said semiconductor pellet.

20. A method of manufacturing a chip type semiconductor device as set forth in claim 12, wherein said second conductive land area has a concave portion and, in said mounting a semiconductor pellet which has electrodes on both sides thereof on said second conductive land area, said semiconductor pellet is mounted on said concave portion.

12. A method of manufacturing a chip type semiconductor device comprising:

preparing an insulating substrate;

forming first and second conductive land areas on said insulating substrate, said first and second conductive land areas being electrically coupled with each other;

forming a conductive post on said first conductive land area;

mounting a semiconductor pellet which has electrodes on both sides thereof on said second conductive land area, said electrode on one side of said semiconductor pellet being coupled onto said second conductive land area and said electrode on the other side of said semiconductor pellet having an external electrode electrically coupled thereto; and

encapsulating a main area of said insulating substrate including said conductive post and said semiconductor pellet with an encapsulation resin portion, wherein top portions of said conductive post and said external electrode electrically coupled to said semiconductor pellet being exposed from said encapsulation resin portion.