Method of manufacturing a semiconductor device

• US 20020119606A1
• Filed: 02/21/2002
• Published: 08/29/2002
• Est. Priority Date: 02/28/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Hamada, Takashi
• Granted Patent: US 6,599,785 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Abstract

TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming on a first insulating film a first semiconductor film, a second semiconductor film, and a third semiconductor film that are separated from one another;

forming a second insulating film on the first semiconductor film, the second semiconductor film, and the third semiconductor film;

forming a first shape first electrode adjacent to the first semiconductor film, a first shape second electrode the second semiconductor film, and a first shape third electrode on the third semiconductor film;

forming though first doping treatment first concentration impurity regions of one conductivity in the first semiconductor film, the second semiconductor film, and the third semiconductor film by using the first shape first electrode, the first shape second electrode, and the first shape third electrode as masks;

forming a second shape first electrode, a second shape second electrode, and a second shape third electrode from the -first shape first electrode, the first shape second electrode, and the first shape third electrode;

forming through second doping treatment a second concentration impurity region of the one conductivity type in the second semiconductor film, and third concentration impurity regions of the one conductivity type in the first semiconductor film and the second semiconductor film, the second concentration impurity region overlapping the second shape second electrode; and

forming through third doping treatment a fourth concentration impurity region and a fifth concentration impurity region in the third semiconductor film, the regions having the other conductivity type that is opposite to the one conductivity type.

14. A method for manufacturing a semiconductor device according to claim 1, wherein said semiconductor device is incorporated into an electronic apparatuses selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, an audio reproducing device, a laptop personal computer, a game equipment, a portable information terminal and an image playback device.

2. A method of manufacturing a semiconductor device comprising the steps of.

forming a first semiconductor film, a second semiconductor film, and a third semiconductor film on a first insulating film

forming a second insulating film on the first, second and third semiconductor films;

forming a first conductive film on the second insulating film;

forming a second conductive film on said first conductive film;

etching through first etching treatment the first conductive film and the second conductive film to form a first shape first electrode adjacent to the first semiconductor film, a first shape second electrode adjacent to the second semiconductor film, and a first shape third electrode adjacent to the third semiconductor film;

forming through first doping treatment first concentration impurity regions of one conductivity type in the first semiconductor film, the second semiconductor film, and the third semiconductor film;

etching through second etching treatment the first shape first electrode, second electrode, and third electrode to form a second shape first electrode, a second shape second electrode, and a second shape third electrode;

forming through second doping treatment a second concentration impurity region of the one conductivity type in the second semiconductor film, and third concentration impurity regions of the one conductivity type in the first semiconductor film and the second semiconductor film; and

forming through third doping treatment a fourth concentration impurity region and a fifth concentration impurity region in the third semiconductor film, the regions having the other conductivity type that is opposite to the one conductivity type.

5. A method of manufacturing a semiconductor device according to claim 2,

wherein the first conductive film is formed from a compound of nitrogen and one or more elements selected from the group consisting of Ta, W,. Ti, and Mo, and

wherein the second conductive film is formed from an alloy that contains one or more elements selected from the group consisting of Ta, W, Ti, and Mo.

8. A method of manufacturing a semiconductor device according to claim 2, wherein the second conductive film is a film mainly containing silicon.

11. A method of manufacturing a semiconductor device according to claim 2 wherein the second conductive film is a film mainly containing aluminum or copper.

15. A method for manufacturing a semiconductor device according to claim 2, wherein said semiconductor device is incorporated into an electronic apparatuses selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, an audio reproducing device, a laptop personal computer, a game equipment, a portable information terminal and an image playback device.

3. A method of manufacturing a semiconductor device, comprising the steps of:

forming on a first insulating film a first semiconductor film, a second semiconductor film, and a third semiconductor film that are separated from one another;

forming a first shape first electrode over the first semiconductor film with a second insulating film interposed therebetween;

forming a first concentration impurity region of one conductivity type in the first semiconductor film by using the first shape first electrode as a mask;

forming a first shape second electrode and a first shape third electrode over the second semiconductor film and the third semiconductor film with the second insulating film interposed therebetween;

etching the first shape second electrode and the first shape third electrode to form a second shape second electrode and a second shape third electrode, respectively;

forming through second doping treatment a second concentration impurity region of the one conductivity type in the second semiconductor film, and third concentration impurity regions of the one conductivity type in the first semiconductor film and the second semiconductor film, the second concentration impurity region overlapping the second shape second electrode; and

forming through third doping treatment a fourth concentration impurity region and a fifth concentration impurity region in the third semiconductor film, the regions having the other conductivity type that is opposite to the one conductivity type.

6. A method of manufacturing a semiconductor device according to claim 3,

wherein the first conductive film is formed from a compound of nitrogen and one or more elements selected from the group consisting of Ta, W, Ti, and Mo, and

wherein the second conductive film is formed from an alloy that contains one or more elements selected from the group consisting of Ta, W, Ti, and Mo.

9. A method of manufacturing a semiconductor device according to claim 3, wherein the second conductive film is a film mainly containing silicon.

12. A method of manufacturing a semiconductor device according to claim 3 wherein the second conductive film is a film mainly containing aluminum or copper.

16. A method for manufacturing a semiconductor device according to claim 3, wherein said semiconductor device is incorporated into an electronic apparatuses selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, an audio reproducing device, a laptop personal computer, a game equipment, a portable information terminal and an image playback device.

4. A method of manufacturing a semiconductor device, comprising the steps of:

forming a first semiconductor film, a second semiconductor film, and a third semiconductor film on a first insulating film;

forming a second insulating film on the first semiconductor film, the second semiconductor film, and the third semiconductor film;

forming a first conductive film on the second insulating film;

forming a second conductive film on the first conductive film;

etching through first etching treatment the first conductive film and the second conductive film to form a first shape first electrode adjacent to the first semiconductor film;

forming through first doping treatment a first concentration impurity region of one conductivity type in the first semiconductor film by using the first shape first electrode as a mask;

etching through second etching treatment the first conductive film and the second conductive film to form a first shape second electrode and a first shape third electrode over the second semiconductor film and the third semiconductor film;

etching through third etching treatment the first shape second electrode and the first shape third electrode to form a second shape second electrode and a second shape third electrode;

forming through second doping treatment a second concentration impurity region of the one conductivity type in the second semiconductor film, and third concentration impurity regions of the one conductivity type in the first semiconductor film and the second semiconductor film; and

forming through third doping treatment a fourth concentration impurity region and a fifth concentration impurity region in the third semiconductor film, the regions having the other conductivity type that is opposite to the one conductivity type.

7. A method of manufacturing a semiconductor device according to claim 4,

wherein the first conductive film is formed from a compound of nitrogen and one or more elements selected from the group consisting of Ta, W, Ti, and Mo, and

wherein the second conductive film is formed from an alloy that contains one or more elements selected from the group consisting of Ta, W, Ti, and Mo.

10. A method of manufacturing a semiconductor device according to claim 4, wherein the second conductive film is a film mainly containing silicon.

13. A method of manufacturing a semiconductor device according to claim 4 wherein the second conductive film is a film mainly containing aluminum or copper.

17. A method for manufacturing a semiconductor device according to claim 4, wherein said semiconductor device is incorporated into an electronic apparatuses selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, an audio reproducing device, a laptop personal computer, a game equipment, a portable information terminal and an image playback device.