MODULATION DOPED THYRISTOR AND COMPLEMENTARY TRANSISTOR COMBINATION FOR A MONOLITHIC OPTOELECTRONIC INTEGRATED CIRCUIT
First Claim
1. A multifunctional optoelectronic semiconductor device, comprising an epitaxially grown distributed bragg reflector (DBR) mirror upon which is deposited;
- a first sequence of layers to implement a modulation-doped bipolar field-effect transistor with electrons (n type) as its majority carrier, its emitter deposited on said DBR mirror and its collector as a top surface layer, said n type bipolar transistor having a p type inversion channel at a modulation-doped interface performing as a field-effect control element in the role of a conventional base region and said bipolar transistor layer structure also implementing a p channel heterostructure field-effect transistor (PHFBT) layer structure with said emitter layer performing in the role of a gate contact layer for said PHFET;
a second sequence of layers deposited on said first sequence of layers, to implement a modulation-doped bipolar field-effect transistor with holes (p type) as its majority carrier, its collector layer being common with said collector of said n type bipolar transistor and its emitter as a top surface layer, said p type bipolar transistor having an n type inversion channel at a modulation-doped interface performing as a field-effect control element in the role of a conventional base region and said bipolar transistor layer structure also implementing an n channel heterostructure field-effect transistor (NHFET) layer structure with said emitter surface layer performing in the role of a gate contact layer for said NHFET.
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Accused Products
Abstract
A family of high speed transistors and optoelectronic devices is obtained on a monolithic substrate with an epitaxial layer structure comprised of two modulation doped transistor structures, one inverted with respect to the other. The transistor structures are obtained by modification of the Pseudomorphic High Electron Mobility Transistor (PHEMT) structure and are combined in a unique way to create a thyristor structure. The thyristor structure may be used as a digital modulator, a transceiver, an amplifier and a directional coupler. These devices may be realized as either waveguide or vertical cavity devices. The vertical cavity construction enables resonant cavity operation of all device modes. In addition to the multiple optoelectronic properties, the structure also produces inversion channel bipolar devices termed BICFETs having either electrons or holes as the majority carrier and heterostructure FETs with both electron and hole channels. Therefore complementary operation of FET or bipolar circuits is possible.
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Citations
13 Claims
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1. A multifunctional optoelectronic semiconductor device, comprising an epitaxially grown distributed bragg reflector (DBR) mirror upon which is deposited;
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a first sequence of layers to implement a modulation-doped bipolar field-effect transistor with electrons (n type) as its majority carrier, its emitter deposited on said DBR mirror and its collector as a top surface layer, said n type bipolar transistor having a p type inversion channel at a modulation-doped interface performing as a field-effect control element in the role of a conventional base region and said bipolar transistor layer structure also implementing a p channel heterostructure field-effect transistor (PHFBT) layer structure with said emitter layer performing in the role of a gate contact layer for said PHFET;
a second sequence of layers deposited on said first sequence of layers, to implement a modulation-doped bipolar field-effect transistor with holes (p type) as its majority carrier, its collector layer being common with said collector of said n type bipolar transistor and its emitter as a top surface layer, said p type bipolar transistor having an n type inversion channel at a modulation-doped interface performing as a field-effect control element in the role of a conventional base region and said bipolar transistor layer structure also implementing an n channel heterostructure field-effect transistor (NHFET) layer structure with said emitter surface layer performing in the role of a gate contact layer for said NHFET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification