Surface shape recognition sensor and method of manufacturing the same
First Claim
1. A surface shape recognition sensor comprising:
- a plurality of capacitive detection elements formed from lower electrodes and a deformable plate-like upper electrode made of a metal, the lower electrodes being insulated and isolated from each other and stationarily laid out on a single plane of an interlevel dielectric formed on a semiconductor substrate, and the upper electrode being laid out above the lower electrodes at a predetermined interval and having a plurality of opening portions;
a support electrode laid out around the lower electrodes while being insulated and isolated from the lower electrodes, and formed to be higher than the lower electrodes to support the upper electrode;
a protective film formed on the upper electrode to close the opening portions; and
a plurality of projections laid out in a region of said protective film above said capacitive detection element.
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Accused Products
Abstract
A surface shape recognition sensor includes a plurality of capacitive detection elements, a support electrode, a protective film, and a plurality of projections. The capacitive detection elements are formed from lower electrodes and a deformable plate-like upper electrode made of a metal. The lower electrodes are insulated and isolated from each other and stationarily laid out on a single plane of an interlevel dielectric formed on a semiconductor substrate. The upper electrode is laid out above the lower electrodes at a predetermined interval and has a plurality of opening portions. The support electrode is laid out around the lower electrodes while being insulated and isolated from the lower electrodes, and formed to be higher than the lower electrodes to support the upper electrode. The protective film is formed on the upper electrode to close the opening portions. The projections are laid out in a region of the protective film above the capacitive detection element. A method of manufacturing the surface shape recognition sensor is also disclosed.
34 Citations
57 Claims
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1. A surface shape recognition sensor comprising:
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a plurality of capacitive detection elements formed from lower electrodes and a deformable plate-like upper electrode made of a metal, the lower electrodes being insulated and isolated from each other and stationarily laid out on a single plane of an interlevel dielectric formed on a semiconductor substrate, and the upper electrode being laid out above the lower electrodes at a predetermined interval and having a plurality of opening portions;
a support electrode laid out around the lower electrodes while being insulated and isolated from the lower electrodes, and formed to be higher than the lower electrodes to support the upper electrode;
a protective film formed on the upper electrode to close the opening portions; and
a plurality of projections laid out in a region of said protective film above said capacitive detection element. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A surface shape recognition sensor comprising:
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a plurality of capacitive detection elements formed from lower electrodes and a deformable plate-like upper electrode made of a metal, the lower electrodes being insulated and isolated from each other and stationarily laid out on a single plane of an interlevel dielectric formed on a semiconductor substrate, and the upper electrode being laid out above the lower electrodes at a predetermined interval and having a plurality of opening portions;
a support electrode laid out around the lower electrodes while being insulated and isolated from the lower electrodes, and formed to be higher than the lower electrodes to support the upper electrode;
a protective film formed on the upper electrode to close the opening portions; and
a projection made of a metal and laid out in a region of said protective film above said capacitive detection element. - View Dependent Claims (8, 9, 10, 11, 12, 13, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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14. A method of manufacturing a surface shape recognition sensor, comprising the steps of:
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forming an interlevel dielectric on a semiconductor substrate;
forming a first metal film on the interlevel dielectric;
forming a first mask pattern having an opening portion in a predetermined region on the first metal film;
forming a first metal pattern on a surface of the first metal film exposed to a bottom portion of the opening portion of the first mask pattern by plating;
after the first mask pattern is removed, forming a second mask pattern having an opening portion laid out around the first metal pattern on the first metal film and first metal pattern;
forming a second metal pattern thicker than the first metal pattern on the surface of the first metal film exposed to a bottom portion of the opening portion of the second mask pattern by plating;
after the second mask pattern is removed, etching and removing the first metal film using the first and second metal patterns as a mask to form a lower electrode formed from the first metal film and first metal pattern and a support electrode formed from the first metal film and second metal pattern;
forming a sacrificial film on the interlevel dielectric to cover the lower electrode while keeping an upper portion of the support electrode exposed;
forming an upper electrode having a plurality of opening portions on the sacrificial film and support electrode;
after the upper electrode is formed, selectively removing only the sacrificial film through the opening portions;
after the sacrificial film is removed, forming a protective film on the upper electrode;
forming a photosensitive resin film having photosensitivity on the protective film; and
forming a plurality of projections in a region of the protective film above a capacitive detection element by exposing and developing a predetermined pattern on the photosensitive resin film, wherein a plurality of capacitive detection elements each having the lower electrode and upper electrode are formed.
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31. A method of manufacturing a surface shape recognition sensor, comprising the steps of:
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forming an interlevel dielectric on a semiconductor substrate;
forming a first metal film on the interlevel dielectric;
forming a first mask pattern having an opening portion in a predetermined region on the first metal film;
forming a first metal pattern on a surface of the first metal film exposed to a bottom portion of the opening portion of the first mask pattern by plating;
after the first mask pattern is removed, forming a second mask pattern having an opening portion laid out around the first metal pattern on the first metal film and first metal pattern;
forming a second metal pattern thicker than the first metal pattern on the surface of the first metal film exposed to a bottom portion of the opening portion of the second mask pattern by plating;
after the second mask pattern is removed, etching and removing the first metal film using the first and second metal patterns as a mask to form a lower electrode formed from the first metal film and first metal pattern and a support electrode formed from the first metal film and second metal pattern;
forming a sacrificial film on the interlevel dielectric to cover the lower electrode while keeping an upper portion of the support electrode exposed;
forming an upper electrode having a plurality of opening portions on the sacrificial film and support electrode;
after the upper electrode is formed, selectively removing only the sacrificial film through the opening portions;
after the sacrificial film is removed, forming a photosensitive resin film having photosensitivity on the upper electrode; and
simultaneously forming a protective film that covers the upper electrode and a plurality of projections laid out in a region of the protective film above a capacitive detection element by exposing and developing a predetermined pattern on the photosensitive resin film, wherein a plurality of capacitive detection elements each having the lower electrode and upper electrode are formed. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A method of manufacturing a surface shape recognition sensor, comprising the steps of:
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forming an interlevel dielectric on a semiconductor substrate;
forming a first metal film on the interlevel dielectric;
forming a first mask pattern having an opening portion in a predetermined region on the first metal film;
forming a first metal pattern on a surface of the first metal film exposed to a bottom portion of the opening portion of the first mask pattern by plating;
after the first mask pattern is removed, forming a second mask pattern having an opening portion laid out around the first metal pattern on the first metal film and first metal pattern;
forming a second metal pattern thicker than the first metal pattern on the surface of the first metal film exposed to a bottom portion of the opening portion of the second mask pattern by plating;
after the second mask pattern is removed, etching and removing the first metal film using the first and second metal patterns as a mask to form a lower electrode formed from the first metal film and first metal pattern and a support electrode formed from the first metal film and second metal pattern;
forming a sacrificial film on the interlevel dielectric to cover the lower electrode while keeping an upper portion of the support electrode exposed;
forming an upper electrode having a plurality of opening portions on the sacrificial film and support electrode;
after the upper electrode is formed, selectively removing only the sacrificial film through the opening portions;
after the sacrificial film is removed, forming a protective film on the upper electrode;
forming a second metal film on the protective film;
forming a third mask pattern having an opening portion in a predetermined region on the second metal film;
forming a third metal pattern on a surface of the second metal film exposed to a bottom portion of the opening portion of the third mask pattern by plating; and
after the third mask pattern is removed, etching and removing the second metal film using the third metal pattern as a mask to form a projection formed from the second metal film and third metal pattern wherein a plurality of capacitive detection elements each having the lower electrode and upper electrode are formed. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57)
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Specification