Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
First Claim
1. A method of planarizing a microelectronic substrate assembly, comprising:
- pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;
moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;
determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;
measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time;
integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;
correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and
terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly.
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Accused Products
Abstract
Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The measured drag force can be used to generate a plot of work versus time. The work versus time plot is then integrated to determine an estimated work exerted at the pad/substrate interface. The planarizing process is terminated when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly according to a predetermined relationship between work and substrate assembly thickness.
24 Citations
53 Claims
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1. A method of planarizing a microelectronic substrate assembly, comprising:
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pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface;
moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity;
determining an association between work exerted at the pad/substrate interface and a thickness of the substrate assembly;
measuring a parameter indicative of drag force between the substrate assembly and the polishing pad at periodic intervals and generating a plot of measured drag force values versus time;
integrating the product of the measured drag force values and the relative velocity over time to determine an estimated work exerted at the pad/substrate interface;
correlating the estimated work with the association between work at the pad/substrate interface and change in thickness of the substrate assembly to ascertain an estimated thickness of the substrate assembly; and
terminating removal of material from the substrate assembly when the estimated thickness is at least approximately within a range of desired substrate assembly thickness for endpointing the substrate assembly. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of planarizing a microelectronic substrate assembly, comprising:
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removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;
estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and
terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 27, 28, 29, 30, 31)
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26. A method of planarizing a microelectronic substrate assembly, comprising:
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removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;
determining a linear relationship between work exerted at the pad/substrate interface and a change in thickness of the substrate assembly;
estimating work at the pad/substrate interface; and
terminating removal of material from the substrate assembly when the estimated work at the pad/substrate interface corresponds to a change in thickness according the linear relationship that is at least approximately within a range of desired change in thickness for endpointing the substrate assembly.
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32. A method of planarizing a microelectronic substrate assembly, comprising:
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removing material from a substrate assembly using a polishing pad by rubbing at least one of the substrate assembly and the polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface;
determining a linear relationship between work exerted at the pad/substrate interface and a change in thickness of the substrate assembly;
estimating work exerted at the pad/substrate interface by measuring drag force between the substrate assembly and the pad at periodic intervals and integrating the product of the measured drag force and the relative velocity over time; and
terminating removal of material from the substrate assembly when the estimated work exerted at the pad/substrate interface corresponds to a change in thickness according the linear relationship that is at least approximately within a range of desired change in thickness for endpointing the substrate assembly. - View Dependent Claims (33, 34, 35, 36, 37, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52)
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38. A method of endpointing a mechanical and/or chemical-mechanical planarizing process for microelectronic substrate assemblies in which material is removed from a substrate assembly by rubbing at least one of a substrate assembly and a polishing pad against the other at a relative velocity, the substrate assembly contacting a planarizing surface of the polishing pad at a pad/substrate interface, the method comprising:
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estimating total work exerted at the pad/substrate interface to rub the planarizing surface against the substrate assembly; and
terminating removal of material from the substrate assembly when the estimated work corresponds to a desired change in thickness of the substrate assembly according to a predetermined relationship between work and change in substrate assembly thickness.
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53. A machine for planarizing a microelectronic-device substrate assembly, comprising:
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a table having a bearing surface;
a polishing pad having a planarizing zone positioned over the bearing surface of the table, the polishing pad having a backside supported by the bearing surface and a planarizing surface in a planarizing plane;
a carrier assembly for controlling a substrate assembly, the carrier assembly having a head configured to hold the substrate assembly against the planarizing surface;
a drive system having a shaft pivotally coupled to one of the carrier head or the table to move at least one of the table or the carrier head in a lateral movement at least generally parallel to the planarizing plane to impart relative lateral motion between the substrate assembly and the polishing pad thereby generating lateral drag forces; and
an endpointing system including a force detector attached at a load site to at least one of the carrier head or the table, a computer readable medium programmed with a predetermined relationship between work exerted at a pad/substrate interface and thickness of the substrate assembly, and a computer programmed with an integration function being coupled to the force detector and the computer readable medium, the force detector being positioned at the load site to provide signals indicative of lateral drag forces to the computer, the computer integrating the product of the drag force signals and relative velocity over time to determine an estimated work exerted at the pad/substrate interface, and the computer correlating the estimated work with the predetermined relationship between work and substrate assembly thickness to ascertain an estimated thickness of the substrate assembly.
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Specification