×

Semiconductor light emitting device and method

  • US 20020125485A1
  • Filed: 03/09/2001
  • Published: 09/12/2002
  • Est. Priority Date: 12/22/1999
  • Status: Active Grant
First Claim
Patent Images

1. A light-emitting device, comprising:

  • a semiconductor structure formed on one side of a substrate, said semiconductor structure having a plurality of semiconductor layers and an active region within said layers; and

    first and second conductive electrodes contacting respectively different semiconductor layers of said structure on said one side of said substrate;

    said substrate comprising a material having a refractive index n>

    2.0 and light absorption coefficient α

    , at the emission wavelength of said active region, of α

    <

    3 cm

    1
    .

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×