Semiconductor light emitting device and method
First Claim
1. A light-emitting device, comprising:
- a semiconductor structure formed on one side of a substrate, said semiconductor structure having a plurality of semiconductor layers and an active region within said layers; and
first and second conductive electrodes contacting respectively different semiconductor layers of said structure on said one side of said substrate;
said substrate comprising a material having a refractive index n>
2.0 and light absorption coefficient α
, at the emission wavelength of said active region, of α
<
3 cm−
1.
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Accused Products
Abstract
A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient α, at the emission wavelength of the active region, of α>3 cm−1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, α, of the substrate material is α<1 cm−1.
26 Citations
46 Claims
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1. A light-emitting device, comprising:
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a semiconductor structure formed on one side of a substrate, said semiconductor structure having a plurality of semiconductor layers and an active region within said layers; and
first and second conductive electrodes contacting respectively different semiconductor layers of said structure on said one side of said substrate;
said substrate comprising a material having a refractive index n>
2.0 and light absorption coefficient α
, at the emission wavelength of said active region, of α
<
3 cm−
1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 46)
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13. A light emitting device, comprising:
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a semiconductor structure formed on one side of a substrate, said structure having a plurality of semiconductor layers and an active region within said layers, said plurality of layers including an n-type layer of a III-nitride semiconductor and a p-type layer of III-nitride semiconductor on opposing sides of said active region;
first and second conductive electrodes respectively contacting said n-type layer and said p-type layer; and
means for applying electric signals across said electrodes to produce light at said active region, the majority of said light being emitted from said device via said substrate;
said substrate comprising a material having a refractive index n>
2.0 and light absorption coefficient α
, at the emission wavelength of said active region, of α
<
3 cm−
1.
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29. A method for making semiconductor light emitting device chips, comprising the steps of:
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providing a substrate of substantially transparent silicon carbide;
forming a semiconductor structure on one side of said substrate, said semiconductor structure having a plurality of semiconductor layers and an active region within said layers;
applying electrodes to semiconductor layers of said structure on said one side of said substrate to form semiconductor light emitting devices; and
dicing said substrate and devices into a plurality of chips.
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45. A light emitting device, comprising:
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a semiconductor structure formed on one side of a substrate, said structure having a plurality of semiconductor layers and an active region within said layers, said plurality of layers including an n-type layer of a III-nitride semiconductor and a p-type layer of III-nitride semiconductor on opposing sides of said active region;
first and second conductive electrodes respectively contacting said n-type layer and said p-type layer; and
means for applying electric signals across said electrodes to produce light at said active region, the majority of said light being emitted from said device via said substrate;
said substrate comprising polycrystalline silicon carbide.
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Specification