Electronic device and method of manufacture the same

• US 20020130402A1
• Filed: 08/29/2001
• Published: 09/19/2002
• Est. Priority Date: 03/13/2001
• Status: Active Grant

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Usami, Mitsuo
• Granted Patent: US 6,657,542 B2
• Time in Patent Office: Days
• US Class Current: 257/678
• CPC Class Codes: G06K 19/02 characterised by the selection of materials, e.g. to avoid wear during transport through the machine
• CPC Class Codes: G06K 19/041 Constructional details G06K19/06 takes precedence
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: G06K 19/07758 arrangements for adhering the record carrier to further objects or living beings, functioning as an identification tag
• CPC Class Codes: G06K 19/07786 the antenna being of the HF type, such as a dipole
• CPC Class Codes: G06K 7/0008 General problems related to the reading of electronic memory record carriers, independent of its reading method, e.g. power transfer
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/274 by blanket deposition of the material of the layer connector
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 2224/83205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/08 the material being an electrical insulator, e.g. glass
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/4827 Materials
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/645 : Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/01 : Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/16588 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01Q 1/2283 : mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package

Abstract

An electronic device, in which a flat plate semiconductor and dumets connected to surface electrodes on the front and back surfaces of the semiconductor and to lead wires are encapsulated in a glass tube.

Claims

1. An electronic device comprising:

a flat plate IC chip having a memory for storing predetermined information and first and second external electrodes formed on front and back surfaces thereof;

first and second antennae connected to the first and second external electrodes, respectively, to supply power to the IC chip; and

a glass encapsulator provided to cover the IC chip and a part of each of the first and second antennae on sides of the first and second external electrodes.

2. The electronic device according to claim 1, wherein the IC chip has a thickness in the range of 0.1 μ

m to 200 μ

m.

3. The electronic device according to claim 1, wherein the IC chip includes long sides having a length in the range of 0.01 mm to 0.5 mm.

4. The electronic device according to claim 1, wherein the first and second antennae are different in length.

5. The electronic device according to claim 1, wherein the first and second external electrodes are formed on overall front and back sides of the IC chip, respectively.

6. The electronic device according to claim 1, wherein the first and second antennae, respectively, have a dumet connected to the first or second external electrodes and a lead wire connected to the dumet.

7. The electronic device according to claim 6, wherein the dumets have a larger diameter than a length of a diagonal line of the IC chip.

8. The electronic device according to claim 6, wherein the dumets have a larger diameter than that of the lead wires.

9. The electronic device according to any one of claims 1 to 8, wherein the electronic device including the first and second antennae is set to have a length corresponding to one-half a wavelength of a carrier wave used.

10. The electronic device according to claim 1, wherein the first and second antennae are arranged to be perpendicular to the front and back sides of the IC chip.

11. The electronic device according to claim 1, wherein the first and second antennae are used to transmit predetermined information stored in the memory.

12. The electronic device according to claim 1, wherein the first and second antennae transmit a dummy signal before transmitting the predetermined information.

13. The electronic device according to claim 1, wherein the glass encapsulator is tubular.

14. The electronic device according to claim 13, wherein the glass encapsulator has an external dimension of 0.1 mm to 5 mm.

15. The electronic device according to claim 13, wherein the glass tube has an inner dimension of 0.09 mm to 4.9 mm.

17. The electronic device according to claim 16, wherein connections between the conductive wires and the external electrodes are encapsulated by the glass encapsulator.

18. The electronic device according to claim 16, wherein the conductive wires are provided to protrude from the glass encapsulator.

19. The electronic device according to claim 16, wherein the glass encapsulator is tubular and the conductive wires extend along a center axis of a tube of the glass encapsulator.

16. An electronic device comprising:

an IC chip having a memory and external electrodes electrically connected to the memory;

conductive wires connected to the external electrodes to transmit and receive a radio wave;

a glass encapsulator provided to cover the IC chip; and

an identifier, which is used to enable indicating that the IC chip is encapsulated.

20. An electronic device comprising:

an IC chip having a memory and first and second external electrodes provided on a first side and a second side opposite to the first side;

first and second conductive wires connected to the first and second external electrodes, respectively, to transmit and receive a radio wave; and

a tubular plastic encapsulator provided to cover the IC chip.

21. The electronic device according to claim 20, wherein the IC chip has an electronic circuit adapted to operate wirelessly.

22. The electronic device according to claim 21, wherein electric power is supplied to the electronic circuit wirelessly.

23. The electronic device according to claim 21, wherein the electronic circuit has a coupling condenser connected to the external electrodes and a logic circuit, respectively.

24. The electronic device according to claim 23, wherein the coupling condenser has a rectifier diode and a clamp diode.

25. The electronic device according to claim 24, wherein the clamp diode and the logic circuit are connected to a common line.

27. The method of manufacturing an electronic device according to claim 26, wherein the IC chip has a thickness in the range of 0.1 μ

m to 200 μ

m.

28. The method of manufacturing an electronic device according to claim 26, wherein the IC chip includes long sides having a length in the range of 0.01 mm to 0.5 mm.

29. The method of manufacturing an electronic device according to claim 26, wherein the first and second antennae are different in length.

31. The method of manufacturing an electronic device according to claim 26, wherein the dumets have a larger diameter than a length of a diagonal line of the IC chip.

32. The method of manufacturing an electronic device according to claim 31, wherein the dumets have a larger diameter than that of the lead wires.

33. The method of manufacturing an electronic device according to claim 26, wherein the first and second antennae are arranged to be perpendicular to the front and back sides of the IC chip.

38. The electronic device according to claim 37, wherein the flat plate semiconductor chip comprises a circuit element provided on a main surface thereof, the circuit element being operated wirelessly and having two terminals connected to the electrodes.

39. The electronic device according to claim 37, wherein the flat plate semiconductor chip has a thickness in the range of 0.1 mm to 200 μ

m.

40. The electronic device according to claim 37, wherein an overall length of the lead wires is one-half a wavelength of a carrier wave of the wireless transmission.

41. The electronic device according to claim 37, wherein the glass body has a diameter in the range of 0.1 mm to 5 mm.

42. The electronic device according to claim 37, wherein the flat plate semiconductor chip includes long sides having a length in the range of 0.01 mm to 0.5 mm.

44. The method of manufacturing an electronic device according to claim 34, wherein temperature, at which the glass tube melts, is 450°

C. or less.

45. The method of manufacturing an electronic device according to claim 36, wherein at least surfaces of the lead wires are made of copper.

26. A method of manufacturing an electronic device comprising the steps of:

preparing an IC chip having a memory for storing predetermined information and first and second external electrodes provided on front and back sides thereof, respectively;

preparing first and second antennae, respectively, having a dumet at one end thereof;

preparing a glass tube;

inserting a portion of the dumet of the first antenna into the glass tube;

placing the IC chip on the dumet of the first antenna arranged in the glass tube such that the first external electrode is disposed on a side of the first antenna dumet toward the dumet;

inserting a portion of the dumet of the second antenna into the IC chip placed in the glass tube such that the dumet of the second antenna is disposed on a side of the second external electrode; and

melting the glass tube to fix the IC chip and the dumets of the first and second antennae.

30. The method of manufacturing an electronic device according to any one of claims 26 to 29, wherein the first and second external electrodes are provided on overall front and back sides of the IC chip, respectively.

34. A method of manufacturing an electronic device comprising the steps of:

interposing an IC chip, which has a memory for storing predetermined information and first and second external electrodes provided on front and back sides thereof, between first and second antennae in a glass tube; and

melting the glass tube to encapsulate the IC chip and connections of the IC chip and the first and second antennae.

35. An electronic device, in which information stored a memory provided in an IC chip is read through antennae, the electronic device comprising:

an integrated circuit provided on a main surface of the IC chip and including the memory; and

electrodes provided on the main and back surfaces of the IC chip, respectively, and connected to the antennae; and

wherein the IC chip and connections of the electrodes and the antennae are encapsulated with glass.

36. An electronic device, in which self-identification information stored a memory in an IC chip is read, the electronic device comprising:

an integrated circuit provided on a main surface of the IC chip and including the memory; and

lead wires connected to electrodes provided on the main and back surfaces of the IC chip, respectively; and

wherein the IC chip and connections of the respective electrodes and the lead wires are encapsulated with glass.

37. An electronic device, in which information stored a memory in a flat plate semiconductor chip is read wirelessly, the flat plate semiconductor chip comprising:

electrodes provided on main and back sides thereof, respectively, and lead wires connected to the electrodes, respectively, in a manner to be perpendicular to the main surface, and wherein the flat plate semiconductor chip and connections of the chip and the lead wires are encapsulated with glass.

43. A method of operating an electronic device, the method comprising the steps of:

when a radio wave is to be transmitted from a reader to a transponder, beginning in a state, in which no radio wave is transmitted, transmitting a radio wave, then temporarily stopping transmission of radio wave, and since a state at that time, sending data in the transponder to the reader from the transponder.