Semiconductor device and method for producing the same, and anisotropic conductive circuit board

• US 20020132450A1
• Filed: 03/13/2002
• Published: 09/19/2002
• Est. Priority Date: 03/14/2001
• Status: Active Grant

• Current Assignee: Panasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Nose, Sachiyuki
• Granted Patent: US 6,707,158 B2
• Time in Patent Office: Days
• US Class Current: 438/460
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49866 characterised by the materials materials of the substrates H01L23/14, of the lead-frames H01L23/49579
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/20756 : larger or equal to 60 microns less than 70 microns
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns
• CPC Class Codes: H01L 2924/20758 : larger or equal to 80 microns less than 90 microns
• CPC Class Codes: H01L 2924/20759 : larger or equal to 90 microns less than 100 microns
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H05K 1/0203 : Cooling of mounted components H05K1/0272 takes precedence
• CPC Class Codes: H05K 2201/10734 : Ball grid array [BGA]; Bump grid array
• CPC Class Codes: H05K 2201/10969 : Metallic case or integral heatsink of component electrically connected to a pad on PCB
• CPC Class Codes: H05K 2203/0235 : Laminating followed by cutting or slicing perpendicular to plane of the laminate; Embedding wires in an object and cutting or slicing the object perpendicular to direction of the wires
• CPC Class Codes: H05K 3/341 : Surface mounted components
• CPC Class Codes: H05K 3/4038 : Through-connections; Vertical interconnect access [VIA] connections H05K3/403, H05K3/42 take precedence
• CPC Class Codes: Y10T 29/4913 : Assembling to base an electrical component, e.g., capacitor, etc.
• CPC Class Codes: Y10T 29/49144 : by metal fusion
• CPC Class Codes: Y10T 29/49146 : with encapsulating, e.g., potting, etc.
• CPC Class Codes: Y10T 29/49155 : Manufacturing circuit on or in base
• CPC Class Codes: Y10T 29/49171 : with encapsulating

Abstract

A semiconductor device includes a circuit board, a semiconductor element that is mounted on an upper surface of the circuit board and has an electrode terminal, and a sealing resin for sealing a periphery of the semiconductor element that is mounted on the upper surface of the circuit board. The circuit board includes a plurality of conductive members and an insulating substance for binding and fixing the plurality of conductive members. Each of the plurality of conductive members includes a conductive material formed integrally from the upper surface through the lower surface of the circuit board, and an insulating material covering an outer circumference of the conductive material. The conductive material of at least one conductive member of the plurality of conductive members is exposed to the upper surface of the circuit board. The electrode terminal of the semiconductor element is electrically connected to the conductive material of the conductive member exposed to the upper surface of the circuit board via a connecting member.

Claims

1. A semiconductor device comprising:

a circuit board;

a semiconductor element that is mounted on an upper surface of the circuit board and has an electrode terminal; and

a sealing resin for sealing a periphery of the semiconductor element that is mounted on the upper surface of the circuit board,

wherein the circuit board includes a plurality of conductive members and an insulating substance for binding and fixing the plurality of conductive members to each other, and

each of the plurality of conductive members includes a conductive material formed integrally from the upper surface through the lower surface of the circuit board, and an insulating material covering an outer circumference of the conductive material,

the conductive material of at least one conductive member of the plurality of conductive members is exposed to the upper surface of the circuit board; and

the electrode terminal of the semiconductor element is electrically connected to the conductive material of the conductive member exposed to the upper surface of the circuit board via a connecting member.

2. The semiconductor device according to claim 1, wherein

a bonding pad made of a metal coating film connected to the conductive material of a part of the plurality of conductive members, and an electrode pad connected to the conductive material of a part of the plurality of conductive members are provided on the upper surface of the circuit board,

the semiconductor element is mounted on the bonding pad,

the electrode terminal of the semiconductor element is connected to the electrode pad via the connecting member,

a lower electrode pad corresponding to the electrode pad on the upper surface is provided on a lower surface of the circuit board;

and

the lower electrode pad is connected to the conductive material of the conductive member connected to the electrode pad provided on the upper surface.

3. The semiconductor device according to claim 1, wherein

the conductive material of at least one conductive member of the plurality of conductive members is exposed to the lower surface of the circuit board, and

a ball electrode or a protruding electrode is connected to the conductive material of the conductive member exposed to the lower surface of the circuit board.

4. The semiconductor device according to claim 1, wherein the conductive material is a fine line-like conductive material.

5. The semiconductor device according to claim 1, wherein the conductive material has a cross-sectional shape of a circle or a polygon.

6. The semiconductor device according to claim 1, wherein the conductive member and the insulating substance are exposed alternately to a side surface of the circuit board.

7. The semiconductor device according to claim 1, wherein the circuit board is an anisotropic conductive circuit board that has electrical conductivity with respect to the upper and the lower surfaces and is electrically insulated in a horizontal direction.

8. The semiconductor device according to claim 1, wherein a shape of the circuit board viewed from the upper surface thereof is any one of a circle, a rectangle, a hexagon and an octagon.

9. The semiconductor device according to claim 1, wherein the connecting member is a conductive metal fine line or a metal ribbon.

10. The semiconductor device according to claim 1, wherein the connecting member is a conductive protruding electrode.

11. A method for producing a semiconductor device comprising the steps of:

(a) bundling and arranging a plurality of conductive members, each of which includes fine line-like conductive materials whose outer circumference is covered with an insulating material to form a conductive member cluster;

(b) attaching and fixing the conductive members constituting the conductive member cluster to each other with an insulative resin to form a rectangular solid substrate block;

(c) slicing the substrate block with a predetermined thickness to form a substrate element in which cross-sections of the plurality of conductive materials and the insulating materials covering the outer circumferences of the corresponding conductive materials are arranged and whose periphery is made of the insulating resin and the plurality of conductive members;

(d) forming metal coating films on an upper surface and a lower surface of the substrate element, thereby forming a circuit board;

(e) mounting a semiconductor element having an electrode terminal on an upper surface of the circuit board;

(f) electrically connecting the electrode terminal of the semiconductor element mounted on the circuit board and the conductive material positioned on the upper substrate of the circuit board with a connecting member; and

(g) sealing a periphery of the semiconductor element mounted on the upper surface of the circuit board and the connecting member with a sealing resin.

12. The method for producing a semiconductor device according to claim 11, wherein in the step (C), slicing is performed at an angle between 30°

to 150°

with respect to the longitudinal direction of the conductive member cluster constituting the substrate block such that a thickness becomes 0.05 mm to 3.00 mm.

13. The method for producing a semiconductor device according to claim 11, further comprising performing surface-processing by polishing both surfaces of the sliced substrate element, after the step (c).

14. The method for producing a semiconductor device according to claim 11, wherein the step (d) comprises:

forming a metal coating film in a portion on the upper surface of the substrate element on which the semiconductor element is to be mounted to form a bonding pad portion;

forming a metal coating film as an electrode pad connected to the conductive material of the substrate element in a portion of the upper surface of the substrate element to which a connecting member for electrically connecting to the electrode terminal of the semiconductor element to be mounted is to be connected, and

forming a metal coating film on the conductive material exposed on the lower surface of the substrate element to form an electrode pad.

15. The method for producing a semiconductor device according to claim 11, wherein in the step (a), a plurality of conductive members are bundled and arranged in a plurality of rows such that they are densely filled in a grid or staggered manner in cross-section.

16. The method for producing a semiconductor device according to claim 11, wherein in the step (f), the connection is performed using a conductive metal fine line as the connecting member.

17. The method for producing a semiconductor device according to claim 11, wherein in the step (f), the connection is performed using a conductive protruding electrode as the connecting member.

18. The method for producing a semiconductor device according to claim 11, further comprising forming a ball electrode or a protruding electrode on an electrode pad on the conductive material exposed on the lower surface of the circuit board, after the step (g).

19. The method for producing a semiconductor device according to claim 11, wherein in the step (a), the conductive material is a metal fine line made of at least one selected from the group consisting of copper, a copper alloy, aluminum, an aluminum alloy, nickel, and a nickel alloy.

20. A circuit board comprising:

a plurality of conductive member;

an insulating substance for binding and fixing the plurality of conductive members to each other;

wherein each of the plurality of conductive members include a conductive material formed integrally from one end through the other end and an insulating material for covering an outer circumference of the conductive material, and

there is a difference in conductivity between a direction to which the conductive material extends and directions other than that.