Semiconductor device and manufacturing method of the same
First Claim
1. A semiconductor device comprising:
- a semiconductor chip;
a stud bump provided on an electrode of said semiconductor chip; and
an adhesive layer provided on a surface of said semiconductor chip on which said electrode is formed, wherein said stud bump projects from a surface of said adhesive layer.
1 Assignment
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Accused Products
Abstract
Semiconductor device 3 comprises semiconductor chip 11, Au ball bumps 21 formed on pad electrodes 12 with a stud bump method, and thermoplastic adhesive layer 22 provided on the surface of semiconductor chip 11 on which pad electrodes 12 are formed, in which the tops of Au ball bumps 21 project from the surface of adhesive layer 22. Reliable bonding can be realized by forming the bumps for electrical connection and the adhesive resin having an adhesion function on the semiconductor chip. In addition, the present invention provides a method of bonding a copper foil to a semiconductor wafer to form a wiring pattern, a multi chip module in which electrical connection is established by bumps bonded to each other through an adhesive layer, and the like.
66 Citations
25 Claims
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1. A semiconductor device comprising:
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a semiconductor chip;
a stud bump provided on an electrode of said semiconductor chip; and
an adhesive layer provided on a surface of said semiconductor chip on which said electrode is formed, wherein said stud bump projects from a surface of said adhesive layer. - View Dependent Claims (2, 4, 9)
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3. A semiconductor device comprising:
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a semiconductor chip;
a protection resin layer provided on a surface of said semiconductor chip on which an electrode is formed;
a bump provided on said electrode of said semiconductor chip and exposed at a surface of said protection resin layer; and
an interposer adhered to said surface of said protection resin layer through a cured flux and electrically connected to said bump.
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5. A semiconductor device comprising:
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a semiconductor chip;
an adhesive layer provided on a surface of said semiconductor chip on which an electrode is formed;
a bump provided on said electrode of said semiconductor chip and exposed at a surface of said adhesive layer;
a wiring pattern adhered to said surface of said adhesive layer and partially bonded to said bump; and
an insulating and covering layer for insulating and covering said wiring pattern and selectively opening to form an external connecting portion.
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6. A semiconductor device comprising:
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a semiconductor chip;
a protection resin layer provided on a surface of said semiconductor chip on which an electrode is formed;
a bump provided on said electrode of said semiconductor chip and exposed at a surface of said protection resin layer;
a wiring pattern adhered to said surface of said protection resin layer through a cured flux and partially bonded to said bump; and
an insulating and covering layer for insulating and covering said wiring pattern and selectively opening to form an external connecting portion.
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7. A semiconductor apparatus comprising:
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two or more semiconductor devices, each of said devices including a semiconductor chip, an adhesive layer provided on a surface of said semiconductor chip on which an electrode is formed, and a bump provided on said electrode of said semiconductor chip and exposed at a surface of said adhesive layer, wherein part of a surface of one of said semiconductor devices on which said adhesive layer is provided is adhered to part or all of a surface of another one of said semiconductor devices on which said adhesive layer is provided and they are electrically connected to each other with said bumps at the adhesion surface.
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8. A semiconductor apparatus comprising:
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two or more stacked semiconductor devices, each of said devices including a semiconductor chip having electrodes formed on the front and back, an adhesive layer provided on the front or back of said semiconductor chip, and a bump provided on said electrode of said semiconductor chip and exposed at a surface of said adhesive layer, wherein one of said semiconductor devices is adhered to one of said semiconductor devices below through said adhesive layer and the electrodes thereof are connected to each other through said bump.
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10. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming an adhesive layer on a surface on which said bump is provided;
etching an entire surface of said adhesive layer until said bump projects; and
cutting said semiconductor wafer for division into each of said semiconductor chips. - View Dependent Claims (24)
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11. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming an adhesive layer on a surface on which said bump is provided;
etching an entire surface of said adhesive layer until said bump projects;
cutting said semiconductor wafer for division into each of said semiconductor chips; and
mounting one, or two or more of said semiconductor chips on a single wiring substrate, and performing heating and pressing for adhesion to said wiring substrate with said adhesive layer and electrical connection to wiring on said wiring substrate with said bump. - View Dependent Claims (22, 23)
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12. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming a protection resin layer on a surface on which said bump is provided;
etching an entire surface of said protection resin layer until said bump projects;
cutting said semiconductor wafer for division into each of said semiconductor chips;
for one, or two or more of said semiconductor chips, applying a thermosetting flux to said bump and said protection resin layer or to a wiring substrate corresponding thereto;
disposing said bump on wiring of said wiring substrate; and
performing heating to solder said bump to said wiring and cure said thermosetting flux.
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13. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming an adhesive layer on a surface on which said bump is provided;
etching an entire surface of said adhesive layer until said bump projects; and
bonding said semiconductor wafer to a wiring substrate through said adhesive layer and cutting said semiconductor chip along its perimeter for division into each of said semiconductor chips.
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14. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming an adhesive layer on a surface on which said bump is provided;
etching an entire surface of said adhesive layer until said bump projects;
aligning said semiconductor wafer with a wiring substrate through said adhesive layer, and performing heating and pressing for adhesion to said wiring substrate with said adhesive layer and electrical connection to wiring on said wiring substrate with said bump;
cutting said semiconductor chip along its perimeter for division into each of said semiconductor chips.
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15. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming a protection resin layer on a surface on which said bump is provided;
etching an entire surface of said protection resin layer until said bump projects;
applying a thermosetting flux to said bump and said protection resin layer or to a wiring substrate corresponding thereto;
disposing said bump on wiring of said wiring substrate;
performing heating to solder said bump to said wiring and cure said thermosetting flux; and
cutting said semiconductor chip along its perimeter for division into each of said semiconductor chips.
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16. A method of manufacturing a semiconductor device, comprising the steps of:
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providing a bump on an electrode of a semiconductor chip;
forming an adhesive layer on a surface on which said bump is provided;
etching an entire surface of said adhesive layer until said bump projects;
bonding said semiconductor chip to a metal foil through said adhesive layer; and
forming said metal foil into a wiring pattern.
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17. A method of manufacturing a semiconductor device, comprising the steps of:
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providing a bump on an electrode of a semiconductor chip;
forming an adhesive layer on a surface on which said bump is provided;
etching an entire surface of said adhesive layer until said bump projects;
aligning said semiconductor chip with a metal foil through said adhesive layer, and performing heating and pressing for adhesion to said metal foil with said adhesive layer and electrical connection to said metal foil with said bump; and
forming said metal foil into a wiring pattern.
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18. A method of manufacturing a semiconductor device, comprising the steps of:
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providing a bump on an electrode of a semiconductor chip;
forming a protection resin layer on a surface on which said bump is provided;
etching an entire surface of said protection resin layer until said bump projects;
aligning said semiconductor chip with a metal foil through said protection resin layer;
performing heating to solder said bump to said metal foil and cure a thermosetting flux; and
forming said metal foil into a wiring pattern.
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19. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming an adhesive layer on a surface on which said bump is provided;
etching an entire surface of said adhesive layer until said bump projects; and
boning said semiconductor wafer to a metal foil through said adhesive layer; and
forming said metal foil into a wiring pattern; and
then, cutting said semiconductor chip along its perimeter for division into each of said semiconductor chips.
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20. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming an adhesive layer on a surface on which said bump is provided;
etching an entire surface of said adhesive layer until said bump projects;
aligning said semiconductor wafer with a metal foil through said adhesive layer, and performing heating and pressing for adhesion to said metal foil with said adhesive layer and electrical connection to said metal foil with said bump;
forming said metal foil into a wiring pattern; and
then, cutting said semiconductor chip along its perimeter for division into each of said semiconductor chips.
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21. A method of manufacturing a semiconductor device, comprising the steps of:
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forming a predetermined number of semiconductor chips on a semiconductor wafer and providing a bump on an electrode of each of said semiconductor chips;
forming a protection resin layer on a surface on which said bump is provided;
etching an entire surface of said protection resin layer until said bump projects;
aligning said semiconductor wafer with a metal foil through said protection resin layer;
performing heating to solder said bump to said metal foil and cure a thermosetting flux;
forming said metal foil into a wiring pattern; and
then, cutting said semiconductor chip along its perimeter for division into each of said semiconductor chips.
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25. A semiconductor device comprising:
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a semiconductor chip;
an adhesive layer provided on a surface of said semiconductor chip on which an electrode is formed;
a bump provided on said electrode of said semiconductor chip and exposed at a surface of said adhesive layer;
a tape substrate; and
an interposer, wherein said semiconductor chip is adhered to the front of said tape substrate with said adhesive layer, said semiconductor chip is electrically connected to said tape substrate with said bump, and said interposer is connected to the back of said tape substrate for allowing electrical conduction.
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Specification