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Wafer inspection system and wafer inspection process using charged particle beam

  • US 20020134936A1
  • Filed: 01/04/2002
  • Published: 09/26/2002
  • Est. Priority Date: 03/23/2001
  • Status: Active Grant
First Claim
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1. A wafer inspection system using a charged particle beam, comprising:

  • a charged particle source;

    an objective lens for irradiating a wafer on which a pattern including a hole pattern is formed with a primary charged particle beam from said charged particle source;

    a sample stage for holding said wafer;

    a charged particle generator for positively charging the surface of said wafer placed on said sample stage;

    a deflector for irradiating a predetermined area in said wafer positively charged with a primary charged particle beam; and

    a detector for detecting a secondary charged particle from said wafer positively charged, wherein an inspection is conducted on said hole pattern on the basis of a signal from said detector.

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