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Thin planar semiconductor device having electrodes on both surfaces and method of fabricating same

  • US 20020135057A1
  • Filed: 03/19/2002
  • Published: 09/26/2002
  • Est. Priority Date: 03/26/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an IC chip;

    a wiring layer that is a planar wiring layer constituted by electrical wiring, surface electrodes of said IC chip being electrically connected to a first surface of said wiring layer;

    conductive posts provided on wiring of said wiring layer on said first surface of said wiring layer;

    insulating resin covering portions not occupied by said IC chip and conductive posts on said first surface of said wiring layer;

    end surfaces of said conductive posts exposed from said resin;

    a resist layer formed on a second surface of said wiring layer that is the opposite surface of said wiring layer; and

    exposed portions provided in said resist layer in which desired wiring portions of said wiring layer are exposed.

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