Surface acoustic wave apparatus and communications unit

• US 20020135442A1
• Filed: 03/08/2002
• Published: 09/26/2002
• Est. Priority Date: 03/23/2001
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Takasaki, Hiroshi, Sawada, Yoichi
• Granted Patent: US 6,693,501 B2
• Time in Patent Office: Days
• US Class Current: 333/195
• CPC Class Codes: H03H 9/0071 the balanced terminals being on the same side of the tracks
• CPC Class Codes: H03H 9/0085 having four acoustic tracks
• CPC Class Codes: H03H 9/02866 of bulk wave excitation and reflections

Abstract

In a surface acoustic wave (SAW) apparatus, a first SAW filter device and a second SAW filter device are disposed on a piezoelectric substrate such that their respective propagation paths overlap. When the center-to-center distance between the first and second SAW filter devices are indicated by d₁, and when the thickness of the piezoelectric substrate is indicated by t, the first and second SAW filter devices and the piezoelectric substrate are arranged so as to satisfy the condition d₁≦2.3×t or d₁≧2.8×t.

Claims

1. A surface acoustic wave apparatus comprising:

a piezoelectric substrate;

a first surface acoustic wave filter device including a plurality of interdigital electrodes provided on the piezoelectric substrate along a direction in which a surface acoustic wave propagates; and

a second surface acoustic wave filter device including a plurality of interdigital electrodes provided on the piezoelectric substrate along a direction in which a surface acoustic wave propagates, a propagation path of said first surface acoustic wave filter device being partially overlapped with a propagation path of said second surface acoustic wave filter device, wherein

when the center-to-center distance between said first surface acoustic wave filter device and said second surface acoustic wave filter device is indicated by d₁, and when the thickness of said piezoelectric substrate indicated by t, said first surface acoustic wave filter device, said second surface acoustic wave filter device, and said piezoelectric substrate are arranged to satisfy a condition d₁≦

2.3×

t or d₁≧

2.8×

t.

2. A surface acoustic wave apparatus according to claim 1, wherein transmission amplitude characteristics of said first surface acoustic wave filter device in a pass band are substantially the same as transmission amplitude characteristics of said second surface acoustic wave filter device in a pass band, and transmission phase characteristics of said first surface acoustic wave filter device are substantially 180°

out of phase with transmission phase characteristics of said second surface acoustic wave filter device; and

a plurality of terminals including an input terminal or output terminals are provided and one of the input terminal and the output terminals is an unbalanced terminal, and the other terminals are balanced terminals.

3. A surface acoustic wave apparatus according to claim 1, wherein a center frequency of said first surface acoustic wave filter device is different from a center frequency of said second surface acoustic wave filter device such that said surface acoustic wave apparatus is operable as a multi-band filter.

4. A surface acoustic wave apparatus according to claim 1, wherein said piezoelectric substrate is a 36°

to 44°

Y-cut X-propagating LiTaO₃ substrate.

5. A surface acoustic wave apparatus according to claim 1, wherein said first surface acoustic wave filter device includes reflectors arranged so as to sandwich the plurality of interdigital electrodes in the direction in which a surface acoustic wave propagates.

6. A surface acoustic wave apparatus according to claim 1, wherein said second surface acoustic wave filter device includes reflectors arranged so as to sandwich the plurality of interdigital electrodes in the direction in which a surface acoustic wave propagates.

7. A surface acoustic wave apparatus according to claim 1, wherein a condition 1.6t≦

d₁≦

2.3t or 2.8t≦

d₁≦

3.5t is satisfied.

8. A surface acoustic wave apparatus according to claim 1, wherein a condition 1.7t≦

d₁≦

2.1t or 2.9t≦

d₁≦

3.3t is satisfied.

9. A communication unit comprising the surface acoustic wave apparatus set forth in claim 1.

10. A surface acoustic wave apparatus comprising:

a piezoelectric substrate;

a first surface acoustic wave filter device including a plurality of interdigital electrodes provided on said piezoelectric substrate along a direction in which a surface acoustic wave propagates;

a second surface acoustic wave filter device including a plurality of interdigital electrodes provided on said piezoelectric substrate along a direction in which a surface acoustic wave propagates;

a third surface acoustic wave filter device including a plurality of interdigital electrodes provided on said piezoelectric substrate along a direction in which a surface acoustic wave propagates; and

a fourth surface acoustic wave filter device including a plurality of interdigital electrodes provided on said piezoelectric substrate along a direction in which a surface acoustic wave propagates, said first surface acoustic wave filter device and said third surface acoustic wave filter device being cascade-connected, said second surface acoustic wave filter device and said fourth surface acoustic wave filter device being cascade-connected, a propagation path of said first surface acoustic wave filter device being partially overlapped with a propagation path of said second surface acoustic wave filter device, and a propagation path of said third surface acoustic wave filter device being partially overlapped with a propagation path of said fourth surface acoustic wave filter device;

wherein

when the center-to-center distance between said first surface acoustic wave filter device and said second surface acoustic wave filter device is indicated by d₁, when the center-to-center distance between said third surface acoustic wave filter device and said fourth surface acoustic wave filter device is indicated by d₂, and when a wavelength of a surface acoustic wave to be excited is indicated by λ

, said first through fourth surface acoustic wave filter devices are arranged such that the center-to-center distance d₁ is differentiated from the center-to-center distance d2 by an amount approximately equal to (2n+1)×

0.5λ

(n=0, 1, 2, 3, and so on).

11. A surface acoustic wave apparatus according to claim 10, wherein transmission amplitude characteristics of said first through fourth surface acoustic wave filter devices in a pass band are substantially the same, and three of said first through fourth surface acoustic wave filter devices have substantially the same transmission phase characteristics, the transmission phase characteristics of the remaining surface acoustic wave filter device being substantially 180°

out of phase with the transmission phase characteristics of the other surface acoustic wave filter devices, and a plurality of terminals including an input terminal or output terminals are provided and one of the input terminal and the output terminals is an unbalanced terminal, and the other terminals are balanced terminals.

12. A surface acoustic wave apparatus according to claim 10, wherein, when the thickness of said piezoelectric substrate is indicated by t, said first through fourth surface acoustic wave filter devices and said piezoelectric substrate are arranged to satisfy conditions d₁≦

2.3×

t or d₁≧

2.8×

t and d₂≦

2.3×

t or d₂≧

2.8×

t.

13. A surface acoustic wave apparatus according to claim 12, wherein said piezoelectric substrate is a 36°

to 44°

Y-cut X-propagating LiTaO₃ substrate.

14. A surface acoustic wave apparatus according to claim 10, wherein said first surface acoustic wave filter device includes reflectors arranged so as to sandwich the plurality of interdigital electrodes in the direction in which a surface acoustic wave propagates.

15. A surface acoustic wave apparatus according to claim 10, wherein said second surface acoustic wave filter device includes reflectors arranged so as to sandwich the plurality of interdigital electrodes in the direction in which a surface acoustic wave propagates.

16. A surface acoustic wave apparatus according to claim 10, wherein said third surface acoustic wave filter device includes reflectors arranged so as to sandwich the plurality of interdigital electrodes in the direction in which a surface acoustic wave propagates.

17. A surface acoustic wave apparatus according to claim 10, wherein said fourth surface acoustic wave filter device includes reflectors arranged so as to sandwich the plurality of interdigital electrodes in the direction in which a surface acoustic wave propagates.

18. A surface acoustic wave apparatus according to claim 12, wherein a condition 1.6t≦

d₁≦

2.3t or 2.8t≦

d₁≦

3.5t is satisfied.

19. A surface acoustic wave apparatus according to claim 12, wherein a condition 1.7t≦

d₁≦

2.1t or 2.9t≦

d₁≦

3.3t is satisfied.

20. A communication unit comprising the surface acoustic wave apparatus set forth in claim 10.