Method for forming a semiconductor device having a metal substrate
First Claim
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1. A method for forming a semiconductor device with a metal substrate, said method comprising:
- providing a semiconductor substrate;
forming at least a semiconductor layer on said semiconductor substrate;
forming said metal substrate on said semiconductor substrate; and
removing said semiconductor substrate.
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Abstract
The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes at least one semiconductor substrate; at least one semiconductor layer is formed on the semiconductor substrate; the metal substrate is formed on the semiconductor substrate and then the semiconductor substrate is removed. The metal substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and lifetime of the semiconductor device.
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Citations
35 Claims
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1. A method for forming a semiconductor device with a metal substrate, said method comprising:
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providing a semiconductor substrate;
forming at least a semiconductor layer on said semiconductor substrate;
forming said metal substrate on said semiconductor substrate; and
removing said semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for forming a semiconductor device, said method comprising:
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providing a semiconductor substrate;
forming at least a semiconductor layer on said semiconductor substrate;
forming a temporary substrate at a first side of said semiconductor layer;
removing said semiconductor substrate; and
forming a permanent substrate at a second side of said semiconductor layer; and
removing said temporary substrate. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for forming a light emitting diode with a metal substrate, said method comprising:
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providing a semiconductor substrate;
forming an epitaxial layer on said semiconductor substrate, said epitaxial layer consisting of a plurality of semiconductor layers;
forming a metal ohmic electrode layer on said epitaxial layer;
forming said metal substrate on said metal ohmic electrode layer;
removing said semiconductor substrate; and
forming a ohmic electrode bonding pad on said epitaxial layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification