Method of manufacturing nitride semiconductor substrate

• US 20020137342A1
• Filed: 02/05/2002
• Published: 09/26/2002
• Est. Priority Date: 03/23/2001
• Status: Active Grant

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Ishida, Masahiro, Ueda, Daisuke, Yuri, Masaaki
• Granted Patent: US 6,562,701 B2
• Time in Patent Office: Days
• US Class Current: 438/689
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the base substrate to separate the semiconductor layer from the base substrate, so that a nitride semiconductor substrate is formed from the semiconductor layer.

Claims

1. A method of manufacturing a nitride semiconductor substrate, comprising:

a first step of forming a mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings on a main surface of a base substrate;

a second step of selectively growing a semiconductor layer of nitride on said base substrate through said mask film; and

a third step of irradiating an interface between said semiconductor layer and said base substrate with a laser beam, thereby separating said semiconductor layer from said base substrate to form a semiconductor substrate from said semiconductor layer.

2. The method according to claim 1, wherein

said base substrate is composed of sapphire whose main surface is in a {0001} plane orientation, and

in said first step, each said opening is formed in a stripe shape substantially in a direction of a zone axis, a <

1-100>

direction in said base substrate.

3. The method according to claim 1, wherein

said base substrate is composed of silicon carbide or aluminum nitride whose main surface is in a {0001} plane orientation, and

in said first step, each said opening is formed in a stripe shape in a direction of a zone axis, a <

11-20>

direction in said base substrate.

4. The method according to the claim 1, further comprising the step of forming an irregular region on the main surface of said base substrate before said first step,

said first step comprising the step of forming said mask film so that a top surface of a raised portion in said irregular region is exposed through said opening.

5. The method according to claim 4, wherein

said base substrate is composed of sapphire whose main surface is in a {0001} plane orientation, and

said step of forming said irregular region comprises the step of forming a plurality of grooves extending parallel to each other on the main surface of said base substrate so that the grooves are substantially in a direction of a zone axis, a <

1-100>

direction in said base substrate.

6. The method according to claim 4, wherein

said base substrate is composed of silicon carbide or aluminum nitride whose main surface is in a {0001} plane orientation, and

the step of forming said irregular region comprises the step of forming a plurality of grooves extending parallel to each other on the main surface of said base substrate so that the grooves are substantially in a direction of a zone axis, a <

11-20>

direction in said base substrate.

7. The method according to claim 4, wherein said first step comprises the steps of:

forming a mask forming film on the entire surface of said irregular region in said base substrate;

applying a resist film to cover said mask forming film;

etching said resist film while leaving said resist film on the recessed part of said irregular region, thereby exposing an upper part of the raised part of said irregular region in said mask forming film; and

etching said mask forming film using the resist film left on said recessed part as a mask.

8. The method according to claim 7, wherein oxygen plasma is used in said step of etching said resist film.

9. The method according to claim 8, wherein said mask forming film is composed of an oxide.

10. The method according to claim 4, wherein in said second step, a gap is formed between said base substrate and said semiconductor layer.

11. The method according to claim 1, wherein in said third step, a laser beam is irradiated upon at least a part of said semiconductor layer exposed through an opening in said mask film.

12. The method according to claim 1, wherein

in said first step, said plurality of openings are formed in an island shape, and

in said third step, a laser beam is irradiated while scanning in synchronization with a part of said semiconductor layer exposed through each opening in said mask film.

13. The method according to claim 1, wherein

in said first step, said plurality of openings are formed in an island shape, and

in said third step, a laser beam is irradiated upon a plurality of said exposed parts of said semiconductor layer at a time while scanning the exposed parts through openings in said mask film.

14. The method according to claim 1, wherein said mask film is composed of at least one selected from the group consisting of silicon oxide, silicon nitride, and tungsten.

15. The method according to claim 1, wherein an interval of the ends of adjacent openings in said mask film is substantially equal to or smaller than a thickness of said semiconductor layer.

16. The method according to claim 1, wherein a width of the openings in said mask film is about at most ten times as large as a distance between the ends of adjacent openings.

17. A method of manufacturing a nitride semiconductor substrate, comprising:

a first step of selectively etching a main surface of a base substrate and forming an irregular region on the main surface of said base substrate;

a second step of growing a semiconductor layer of nitride on said irregular region in said base substrate so that a gap is formed between the layer and a recess in the irregular region and the upper surface is flat; and

a third step of irradiating a laser beam upon an interface between said semiconductor layer and said base substrate to separate said semiconductor layer from said base substrate, thereby forming a semiconductor substrate from said semiconductor layer.