Planar spiral inductor structure with patterned microelectronic structure integral thereto

• US 20020142512A1
• Filed: 03/29/2001
• Published: 10/03/2002
• Est. Priority Date: 03/29/2001
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Ho, Yen-Shih, Ma, Ssu-Pin
• Granted Patent: US 7,038,294 B2
• Time in Patent Office: Days
• US Class Current: 438/100
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48644 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48744 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48747 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48824 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48844 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 23/5227 : Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/645 : Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: Y10S 257/909 : Macrocell arrays, e.g. gate arrays with variable size or configuration of cells

Abstract

Within a method for fabricating a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a spirally patterned conductor layer which terminates in a microelectronic structure within the center of the spirally patterned conductor layer. The spirally patterned conductor layer forms a planar spiral inductor, and the microelectronic structure formed within the center of the spirally patterned conductor layer further comprises a series of electrically interconnected sub-patterns. The method contemplates a microelectronic fabrication fabricated in accord with the method. The microelectronic fabrication is fabricated with optimal performance while occupying minimal microelectronic substrate area.

Claims

1. A method for fabricating a microelectronic fabrication comprising:

providing a substrate;

forming over the substrate a spirally patterned conductor layer which terminates in a microelectronic structure formed within the center of the spirally patterned conductor layer, wherein the spirally patterned conductor layer forms a planar spiral inductor, and wherein the microelectronic structure formed within the center of the spirally patterned conductor layer further comprises a series of electrically interconnected sub-patterns.

2. The method of claim 1 wherein by employing the series of electrically interconnected sub-patterns within the microelectronic structure formed within the center of the spirally patterned conductor layer, the microelectronic structure is fabricated with an attenuated eddy current.

3. The method of claim 1 wherein the microelectronic structure is selected from the group consisting of a resistors, diodes, capacitors, bond pads and aggregates thereof.

4. The method of claim 1 wherein the microelectronic structure comprises a capacitor electrically connected with a bond pad.

5. The method of claim 1 wherein the substrate is employed within a microelectronic fabrication selected from the group consisting of integrated circuit microelectronic fabrications, ceramic substrate microelectronic fabrications, solar cell optoelectronic microelectronic fabrications, sensor image array optoelectronic microelectronic fabrications and display image array optoelectronic microelectronic fabrications.

6. The method of claim 1 wherein the spirally patterned conductor layer is formed of a conductor material selected from the group consisting of non-magnetic metal, non-magnetic metal alloy, magnetic metal, magnetic metal alloy, doped polysilicon and polycide conductor materials, and laminates thereof.

7. The method of claim 1 wherein the spirally patterned conductor layer is formed in a geometric shape selected from the group consisting of a triangle, a square, a rectangle, a higher order polygon, an ellipse and a circle.

8. The method of claim 1 further comprising bonding upon the microelectronic structure a bond wire, wherein the bond wire has incorporated therein a minimum of one loop.

9. A microelectronic fabrication comprising:

a substrate;

a spirally patterned conductor layer formed over the substrate, wherein the spirally patterned conductor layer terminates in a microelectronic structure formed within the center of the spirally patterned conductor layer, wherein the spirally patterned conductor layer forms a planar spiral inductor, and wherein the microelectronic structure formed within the center of the spirally patterned conductor layer comprises a series of electrically interconnected sub-patterns.

10. The microelectronic fabrication of claim 9 wherein the substrate is employed within a microelectronic fabrication selected from the group consisting of integrated circuit microelectronic fabrications, ceramic substrate microelectronic fabrications, solar cell optoelectronic microelectronic fabrications, sensor image array optoelectronic microelectronic fabrications and display image array optoelectronic microelectronic fabrications.

11. The microelectronic fabrication of claim 9 wherein the microelectronic structure is selected from the group consisting of resistors, diodes, capacitors, bond pads and aggregates thereof.

12. The microelectronic fabrication of claim 9 wherein the microelectronic structure comprises a capacitor electrically connected with a bond pad.

13. The microelectronic fabrication of claim 9 wherein the spirally patterned conductor layer is formed of a conductor material selected from the group consisting of non-magnetic metal, non-magnetic metal alloy, magnetic metal, magnetic metal alloy, doped polysilicon and polycide conductor materials, and laminates thereof.

14. The microelectronic fabrication of claim 9 wherein the spirally patterned conductor layer is formed in a geometric shape selected from the group consisting of a triangle, a square, a rectangle, a higher order polygon, an ellipse and a circle.

15. The microelectronic fabrication of claim 9 further comprising a bond wire bonded upon the microelectronic structure, wherein the bond wire has incorporated therein a minimum of one loop.