Mixed composition interface layer and method of forming

• US 20020142588A1
• Filed: 04/02/2001
• Published: 10/03/2002
• Est. Priority Date: 04/02/2001
• Status: Active Grant

• Current Assignee: Conversant Intellectual Property Management Inc (MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management))
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Basceri, Cem
• Granted Patent: US 6,908,639 B2
• Time in Patent Office: Days
• US Class Current: 438/652
• CPC Class Codes: C23C 16/029 Graded interfaces
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31683 of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: Y10T 428/24917 including metal layer
• CPC Class Codes: Y10T 428/24926 including ceramic, glass, porcelain or quartz layer

Abstract

An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.

Claims

1. An interface forming method comprising:

forming a first layer comprising a first chemical element;

chemisorbing on the first layer an interface layer comprising at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element; and

forming a second layer comprising the second chemical element on the interface layer.

2. The method of claim 1 wherein the first layer does not substantially comprise the second chemical element.

3. The method of claim 2 wherein the second layer does not substantially comprise the first chemical element.

4. The method of claim 1 wherein the second layer does not substantially comprise the first chemical element.

5. The method of claim 1 wherein the first layer is conductive and the second layer is insulative.

6. The method of claim 1 wherein the first layer comprises a metal other than Ta and the second layer comprises Ta₂O₅.

7. The method of claim 6 wherein the metal comprises Pt.

8. An electronic device interface forming method comprising forming an interface layer between and in contact with a first layer comprising a first chemical element and a second layer comprising a second chemical element different from the first chemical element, the interface layer being formed separately from forming the first and second layers, comprising the first and second chemical elements, and not substantially comprising material from the first or second layers as separately formed.

9. The method of claim 8 wherein the first layer does not substantially comprise the second chemical element.

10. The method of claim 9 wherein the second layer does not substantially comprise the first chemical element.

11. The method of claim 8 wherein the second layer does not substantially comprise the first chemical element.

12. The method of claim 8 wherein the interface layer comprises at least one monolayer of intermixed first and second chemical elements chemisorbed on the first layer.

14. The method of claim 13 wherein the first layer does not substantially comprise the second chemical element.

15. The method of claim 14 wherein the second layer does not substantially comprise the first chemical element.

16. The method of claim 13 wherein the second layer does not substantially comprise the first chemical element.

17. The method of claim 13 wherein the first portion of the at least one monolayer is chemisorbed on first parts of the first layer and the second portion of the at least one monolayer is chemisorbed on second parts of the first layer.

19. The method of claim 18 wherein the first layer does not substantially comprise the second chemical element.

20. The method of claim 19 wherein the second layer does not substantially comprise the first chemical element.

21. The method of claim 18 wherein the second layer does not substantially comprise the first chemical element.

13. An electronic device interface forming method comprising:

forming a first layer comprising a first chemical element;

chemisorbing a first portion of at least one monolayer over the first layer, the first portion comprising the first chemical element;

chemisorbing a second portion of the at least one monolayer over the first layer, the second portion comprising a second chemical element different from the first chemical element and the first and second portions of the at least one monolayer being comprised by an interface layer; and

forming a second layer comprising the second chemical element on the interface layer.

18. An electronic device interface forming method comprising:

forming a first device layer comprising a first chemical element;

chemisorbing a first unsaturated interface layer comprising the first chemical element on the first device layer, the first interface layer having a thickness of from about 1 to about 10 monolayers;

chemisorbing a second unsaturated interface layer at least on the first device layer in areas not saturated by the first interface layer, the second interface layer comprising a second chemical element different from the first chemical element and having a thickness of from about 1 to about 10 monolayers; and

forming a second device layer comprising the second chemical element on the first and second interface layers.

22. An apparatus comprising:

a first layer comprising a first chemical element;

an interface layer chemisorbed on the first layer, the interface layer comprising at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element; and

a second layer comprising the second chemical element on the interface layer.

23. The apparatus of claim 22 wherein the first layer does not substantially comprise the second chemical element.

24. The apparatus of claim 23 wherein the second layer does not substantially comprise the first chemical element.

25. The apparatus of claim 22 wherein the second layer does not substantially comprise the first chemical element.

26. The apparatus of claim 22 wherein the first layer is conductive and the second layer is insulative.

27. The apparatus of claim 22 wherein the first layer comprises a metal other than Ta and the second layer comprises Ta₂O₅.

28. The apparatus of claim 27 wherein the metal comprises Pt.

30. The device of claim 29 wherein the first layer does not substantially comprise the second chemical element.

31. The device of claim 30 wherein the second layer does not substantially comprise the first chemical element.

32. The device of claim 29 wherein the second layer does not substantially comprise the first chemical element.

33. The device of claim 29 wherein the interface layer comprises at least one monolayer of intermixed first and second chemical elements chemisorbed on the first layer.

35. The device of claim 34 wherein the first layer does not substantially comprise the second chemical element.

36. The device of claim 35 wherein the second layer does not substantially comprise the first chemical element.

37. The device of claim 34 wherein the second layer does not substantially comprise the first chemical element.

38. The device of claim 34 wherein the first portion of the at least one monolayer is chemisorbed on first parts of the first layer and the second portion of the at least one monolayer is chemisorbed on second parts of the first layer.

39. The device of claim 34 wherein the at least one monolayer comprises from about 1 to about 10 monolayers.

29. An electronic device comprising:

a first layer comprising a first chemical element;

a second layer comprising a second chemical element different from the first chemical element; and

an interface layer between and in contact with the first and second layers, the interface layer comprising the first and second chemical elements and not substantially comprising material originating from the first or second layers.

34. An electronic device comprising:

a first layer comprising a first chemical element;

a first portion of at least one monolayer chemisorbed on the first layer, the first portion comprising the first chemical element;

a second portion of the at least one monolayer chemisorbed on the first layer, the second portion comprising a second chemical element different from the first chemical element;

an interface layer comprising the first and second portions of the at least one monolayer; and

a second layer comprising the second chemical element on the interface layer.