Method of forming dielectric films
First Claim
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1. A method for depositing a dielectric coating onto a substrate comprising:
- i) providing a system comprising a reactor vessel adapted to contain the substrate and an energy source in communication with said reactor vessel for heating the substrate contained in said vessel; and
ii) forming a film on said substrate, said film being formed according to a method comprising;
a) heating the substrate with said energy source;
b) supplying to said reactor vessel an oxide gas while the substrate is being heated, said oxide gas comprising a compound that contains at least one nitrogen atom such that said oxide gas reacts with said substrate to form an oxynitride layer on said substrate, said formed layer having a thickness of less than 10 angstroms;
c) depositing a nitride layer on said oxynitride layer, said deposition occurring at a temperature less than about 750°
C.;
d) annealing said nitride layer in the presence of a nitridation annealing gas; and
e) annealing said nitride layer in the presence of an oxide annealing gas at a temperature greater than about 770°
C.
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Abstract
A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
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Citations
33 Claims
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1. A method for depositing a dielectric coating onto a substrate comprising:
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i) providing a system comprising a reactor vessel adapted to contain the substrate and an energy source in communication with said reactor vessel for heating the substrate contained in said vessel; and
ii) forming a film on said substrate, said film being formed according to a method comprising;
a) heating the substrate with said energy source;
b) supplying to said reactor vessel an oxide gas while the substrate is being heated, said oxide gas comprising a compound that contains at least one nitrogen atom such that said oxide gas reacts with said substrate to form an oxynitride layer on said substrate, said formed layer having a thickness of less than 10 angstroms;
c) depositing a nitride layer on said oxynitride layer, said deposition occurring at a temperature less than about 750°
C.;
d) annealing said nitride layer in the presence of a nitridation annealing gas; and
e) annealing said nitride layer in the presence of an oxide annealing gas at a temperature greater than about 770°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15, 16, 17, 19, 20, 21, 22, 23, 24, 25, 26, 27, 29, 30, 31, 32, 33)
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13. A method for depositing a dielectric coating onto a substrate comprising:
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heating a semiconductor wafer comprising silicon in the presence of an oxide gas, said oxide gas comprising NO, said oxide gas reacting with said semiconductor wafer to form an oxynitride layer on said wafer, said oxynitride layer being formed at a temperature, at a pressure, and for a time sufficient to form a layer having a thickness of less than about 10 angstroms;
subsequently heating said semiconductor wafer in the presence of a first gas precursor and a second gas precursor to form a nitride layer on said oxynitride layer, said first gas precursor comprising SiH4, said second gas precursor comprising ammonia, said nitride layer being formed at a temperature of less than about 750°
C., said nitride layer having a thickness of less than about 25 angstroms;
annealing said nitride layer in the presence of ammonia; and
thereafter annealing said nitride layer in the presence of N2O at a temperature of at least 770°
C.
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18. A method for forming a dielectric coating on a semiconductor wafer comprising:
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heating a wafer comprising silica in the presence of a gas containing nitrogen to form a passivation layer on said wafer;
subsequently heating said wafer in the presence of a gas precursor, said gas precursor forming a dielectric layer comprising a metal oxide or a silicate on said wafer, said dielectric layer being formed at a temperature of greater than about 300°
C.; and
annealing said dielectric layer in the presence of an annealing gas, said annealing gas comprising an inert gas and an oxygen containing gas.
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28. A dielectric coating on a semiconductor wafer comprising:
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a semiconductor wafer comprising silica;
a passivation layer deposited on said semiconductor wafer, said passivation layer formed by reacting ammonia with a surface of said semiconductor wafer;
a dielectric layer formed on said passivation layer, said dielectric layer comprising a metal oxide or a silicate; and
wherein said dielectric layer has been annealed in the presence of an oxygen containing gas.
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Specification