Substrate temperature control in an ALD reactor

• US 20020144786A1
• Filed: 10/24/2001
• Published: 10/10/2002
• Est. Priority Date: 04/05/2001
• Status: Abandoned Application

• Current Assignee: Novellus Systems Incorporated (LAM Research Corporation)
• Original Assignee: Angstron Systems, Inc. (LAM Research Corporation)
• Inventors: Leeser, Karl F., Chiang, Tony P., Brown, Jeffrey A., Babcoke, Jason E.
• Application Number:
  US10/000,825
• Publication Number:
  US 20020144786A1
• Time in Patent Office: Days
• US Class Current: 156/345.51
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/08 from metal halides
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4411 Cooling of the reaction chamber walls C23C16/45572 takes precedence
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/4486 by producing an aerosol and subsequent evaporation of the droplets or particles
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: C23C 16/515 using pulsed discharges
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/28562 : Selective deposition
• CPC Class Codes: H01L 21/76814 : post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76838 : characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76843 : formed in openings in a dielectric
• CPC Class Codes: Y10T 279/23 : with magnetic or electrostatic means

Abstract

A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. An electrostatic chuck (ESC) retains the substrate. A backside gas increases thermal coupling between the substrate and the ESC. The ESC is cooled via a coolant flowing through a coolant plate and heated via a resistive heater. Various arrangements are disclosed.

Claims

1. A system for controlling the temperature of a substrate in a process chamber comprising:

an electrostatic chuck assembly for retaining a substrate on said chuck assembly by electrostatic attraction, said substrate, when retained by said chuck assembly, forming a backside gas volume bounded by a backside surface of said substrate; and

a gas inlet leading to said backside gas volume for supplying a backside gas to said backside gas volume for providing a thermal transfer between said chuck assembly and said backside surface of said substrate.