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CVD RUTHENIUM SEED FOR CVD RUTHENIUM DEPOSITION

  • US 20020146513A1
  • Filed: 04/05/2001
  • Published: 10/10/2002
  • Est. Priority Date: 04/05/2001
  • Status: Active Grant
First Claim
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1. A method of forming a ruthenium seed layer on a substrate comprising the steps of:

  • (a) vaporizing a ruthenium-containing compound;

    (b) introducing the vaporized ruthenium-containing compound into a CVD apparatus;

    (c) introducing oxygen into the CVD apparatus;

    (d) maintaining an oxygen rich environment in a process chamber of the CVD apparatus for the initial formation of a ruthenium oxide seed layer;

    (e) depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and

    (f) annealing the deposited ruthenium oxide seed layer in a gas ambient thus forming a ruthenium seed layer.

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