Chemical vapor deposition apparatus

• US 20020146902A1
• Filed: 05/29/2002
• Published: 10/10/2002
• Est. Priority Date: 09/03/1998
• Status: Abandoned Application

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A.
• Application Number:
  US10/159,143
• Publication Number:
  US 20020146902A1
• Time in Patent Office: Days
• US Class Current: 438/650
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence

Abstract

A method of forming an iridium-containing film on a substrate, such as a semiconductor wafer using complexes of the formula L_yIrX_z, wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group and X is a halide; y=1 to 4; z=1 to 4; x=0 to 3.

Claims

14. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a precursor composition comprising one or more organic solvents and one or more complexes of the formula;

L_yIrY_z,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;

y=1 to 4; and

z=1 to 4; and

vaporizing the precursor composition to form vaporized precursor composition; and

directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form an iridium-containing film on a surface of the semiconductor substrate or substrate assembly.

15. A method of forming a film on a substrate, the method comprising:

providing a substrate;

providing a precursor composition comprising one or more complexes of the formula;

L_yIrY_z,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;

y=1 to 4; and

z=1 to 4; and

forming an iridium-containing film from the precursor composition on a surface of the substrate.

18. A method of forming a film on a substrate, the method comprising:

providing a substrate;

providing a precursor composition comprising one or more solvents and one or more complexes of the formula;

L_yIrY_z,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;

y=1 to 4; and

z=1 to 4; and

vaporizing the precursor composition to form vaporized precursor composition; and

directing the vaporized precursor composition toward the substrate to form an iridium-containing film on a surface of the substrate.

19. A chemical vapor deposition apparatus comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

L_yIrY_z,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;

y=1 to 4; and

z=1 to 4; and

a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

20. A chemical vapor deposition apparatus comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

L_yIrY_z,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;

y=1 to 4; and

z=1 to 4; and

a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

1. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a precursor composition comprising one or more complexes of the formula;

L_yIrY₂,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;

y=1 to 4; and

z=1 to 4; and

forming an iridium-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.

2. The method of claim 1 wherein the step of forming an iridium-containing film comprises vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.

3. The method of claim 2 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.

4. The method of claim 1 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.

5. The method of claim 1 wherein each R group is a C₁-C₈ organic group.

6. The method of claim 5 wherein each R group is a C₁-C₅ organic group.

7. The method of claim 6 wherein each R group is a C₁-C₄ alkyl moiety.

8. The method of claim 1 wherein the precursor composition is a liquid.

9. The method of claim 8 wherein the liquid precursor composition comprises a solid dissolved in a solvent.

10. The method of claim 1 wherein the precursor composition is vaporized in the presence of a carrier gas.

11. The method of claim 1 wherein the precursor composition is vaporized in the presence of a reaction gas.

12. The method of claim 11 wherein the reaction gas is a nonhydrogen gas.

13. The method of claim 1 wherein the iridium-containing film is a single transition metal or alloy film.

16. The method of claim 15 wherein the step of forming an iridium-containing film comprises vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique.

17. The method of claim 16 wherein the precursor composition is a liquid.

22. The method of claim 20 wherein the step of forming a platinum-iridium-containing film comprises vaporizing the precursor compositions and directing them toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.

23. The method of claim 20 wherein the precursor composition comprising one or more complexes of the formula L_yIrY_z is the same as the precursor composition comprising one or more platinum complexes.

24. The method of claim 20 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.

25. The method of claim 20 wherein each R group is a C₁-C₈ organic group.

26. The method of claim 25 wherein each R group is a C₁-C₄ alkyl moiety.

27. The method of claim 20 wherein the precursor compositions are each liquids.

28. The method of claim 27 wherein the liquid precursor compositions comprise a solid dissolved in a solvent.

29. The method of claim 20 wherein the precursor compositions are vaporized in the presence of a carrier gas.

30. The method of claim 20 wherein the precursor compositions are vaporized in the presence of a reaction gas.

31. The method of claim 20 wherein the platinum precursor composition comprises CpPt(Me)₃, wherein Me is a methyl group and Cp is cyclopentadienyl.

35. The apparatus of claim 19 wherein the substrate is a semiconductor substrate.

37. The apparatus of claim 19 wherein each R group is a C₁-C₈ organic group.

40. The apparatus of claim 19 wherein the precursor composition is a liquid.

41. The apparatus of claim 40 wherein the liquid precursor composition comprises a solid dissolved in a solvent.

21. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a precursor composition comprising one or more complexes of the formula;

L_yIrY_z,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;

y=1 to 4; and

z=1 to 4; and

providing a precursor composition comprising one or more platinum complexes; and

forming a platinum-iridium-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.

25-1. The method of claim 24 wherein each R group is a C₁-C₅ organic group.

32. A method of forming a film on a substrate, the method comprising:

providing a substrate;

providing a precursor composition comprising one or more complexes of the formula;

L_yIrY₂,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_{3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=}0 to 3;

y=1 to 4; and

z=1 to 4; and

providing a precursor composition comprising one or more platinum complexes;

and;

forming a platinum-iridium-containing film from the precursor composition on a surface of the substrate.

33. The method of claim 32 wherein forming a platinum-iridium-containing film comprises vaporizing the precursor compositions and directing them toward the substrate using a chemical vapor deposition technique.

34. The method of claim 32 wherein the platinum precursor composition comprises CpPt(Me)₃, wherein Me is a methyl group and Cp is cyclopentadienyl.

36. The apparatus of claim 35 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.

38. The apparatus of claim 37 wherein each R group is a C₁-C₅ organic group.

39. The apparatus of claim 38 wherein each R group is a C₁-C₄ alkyl moiety.

42. A chemical vapor deposition apparatus comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more platinum complexes and a precursor composition comprising one or more complexes of the formula;

L_yIrY_z,

wherein;

each L group is independently a neutral or anionic ligand;

each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N₂, PX₃, PR₃, P(OR)₃, AsX₃, AsR₃, As(OR)₃, SbX₃, SbR₃, Sb(OR)₃, NH_xR_3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x =0 to 3;

y=1 to 4; and

z=1 to 4; and

a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.

43. The apparatus of claim 42 wherein the substrate is a semiconductor substrate.

44. The apparatus of claim 43 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.

45. The apparatus of claim 42 wherein each R group is a C₁-C₈ organic group.

46. The apparatus of claim 45 wherein each R group is a C₁-C₅ organic group.

47. The apparatus of claim 46 wherein each R group is a C₁-C₄ alkyl moiety.

48. The apparatus of claim 42 wherein the precursor composition comprising one or more platinum complexes is the same as the precursor composition comprising one or more complexes of the formula L_yIrY_z.

49. The apparatus of claim 42 wherein the precursor compositions are each liquids.

50. The apparatus of claim 49 wherein the liquid precursor compositions comprise a solid dissolved in a solvent.

51. The apparatus of claim 42 wherein the platinum precursor composition comprises CpPt(Me)₃, wherein Me is a methyl group and Cp is cyclopentadienyl.