Chemical vapor deposition apparatus
First Claim
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14. A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
providing a precursor composition comprising one or more organic solvents and one or more complexes of the formula;
LyIrYz, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
vaporizing the precursor composition to form vaporized precursor composition; and
directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form an iridium-containing film on a surface of the semiconductor substrate or substrate assembly.
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Abstract
A method of forming an iridium-containing film on a substrate, such as a semiconductor wafer using complexes of the formula LyIrXz, wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group and X is a halide; y=1 to 4; z=1 to 4; x=0 to 3.
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Citations
51 Claims
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14. A method of manufacturing a semiconductor structure, the method comprising:
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providing a semiconductor substrate or substrate assembly;
providing a precursor composition comprising one or more organic solvents and one or more complexes of the formula;
LyIrYz, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
vaporizing the precursor composition to form vaporized precursor composition; and
directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form an iridium-containing film on a surface of the semiconductor substrate or substrate assembly.
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15. A method of forming a film on a substrate, the method comprising:
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providing a substrate;
providing a precursor composition comprising one or more complexes of the formula;
LyIrYz, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
forming an iridium-containing film from the precursor composition on a surface of the substrate.
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18. A method of forming a film on a substrate, the method comprising:
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providing a substrate;
providing a precursor composition comprising one or more solvents and one or more complexes of the formula;
LyIrYz, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
vaporizing the precursor composition to form vaporized precursor composition; and
directing the vaporized precursor composition toward the substrate to form an iridium-containing film on a surface of the substrate.
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19. A chemical vapor deposition apparatus comprising:
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a deposition chamber having a substrate positioned therein;
a vessel containing a precursor composition comprising one or more complexes of the formula;
LyIrYz, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
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20. A chemical vapor deposition apparatus comprising:
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a deposition chamber having a substrate positioned therein;
a vessel containing a precursor composition comprising one or more complexes of the formula;
LyIrYz, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber. - View Dependent Claims (1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 16, 17, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 35, 37, 40, 41)
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21. A method of manufacturing a semiconductor structure, the method comprising:
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providing a semiconductor substrate or substrate assembly;
providing a precursor composition comprising one or more complexes of the formula;
LyIrYz, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
providing a precursor composition comprising one or more platinum complexes; and
forming a platinum-iridium-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
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25-1. The method of claim 24 wherein each R group is a C1-C5 organic group.
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32. A method of forming a film on a substrate, the method comprising:
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providing a substrate;
providing a precursor composition comprising one or more complexes of the formula;
LyIrY2, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
providing a precursor composition comprising one or more platinum complexes;
and;
forming a platinum-iridium-containing film from the precursor composition on a surface of the substrate. - View Dependent Claims (33, 34, 36, 38, 39)
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42. A chemical vapor deposition apparatus comprising:
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a deposition chamber having a substrate positioned therein;
a vessel containing a precursor composition comprising one or more platinum complexes and a precursor composition comprising one or more complexes of the formula;
LyIrYz, wherein;
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x =0 to 3;
y=1 to 4; and
z=1 to 4; and
a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51)
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Specification