Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography

• US 20020148978A1
• Filed: 10/26/2001
• Published: 10/17/2002
• Est. Priority Date: 06/30/1999
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Innes, Robert, Teitzel, Robin, Babin, Sergey, Veneklasen, Lee, Veneklasen, Mary
• Granted Patent: US 6,720,565 B2
• Time in Patent Office: Days
• US Class Current: 250/492.22
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 1/78 by charged particle beam [CPB], e.g. electron beam patterning of masks
• CPC Class Codes: H01J 2237/31769 Proximity effect correction
• CPC Class Codes: H01J 37/304 Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography
• CPC Class Codes: Y10S 430/143 Electron beam

Abstract

The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.

Claims

1. A method for correcting for proximity heating of resist in an electron beam lithography system, comprising:

determining an increase of temperature at a writing point by grouping past pixel values as cells of varying size and using resulting cell values as scalar products with one or more predetermined kernels.

2. A method according to claim 1, wherein boundaries of said cells are selected such that a temperature contribution from said cells is substantially independent of a distribution of values within the cell.

3. A method according to claim 1, wherein cell boundaries are selected such that a grouping of kernel values is substantially symmetric about a correction point.

4. A method according to claim 1, wherein cell sizes are selected such that kernel values are approximately equal in value

5. A method according to claim 1, further comprising compensating for the effect of resist heating due to past writing on the exposure of the resist by backscattered electrons associated with the current flash.

6. A method according to claim 1, wherein cells include varying, generally greater numbers of pixels as distance from a point of writing increases, which cells may include contiguous or non-contiguous regions of writing.

7. A system, comprising:

a lithographic printing machine; and

one or more control processors, said one or more processors adapted to compensate for proximity resist heating by applying a kernel of values to one or more cells of pixels to determine a temperature effect of previously written pixels on a current writing pixel for determining the exposure compensation necessary to compensate for the temperature change on the lithographic quality due to earlier writing.

8. A system according to claim 7, further including one or more memory devices adapted to store determinations of cells such that cells closer to a writing pixel include relatively fewer pixels and cells farther from said writing pixel include relatively more pixels.

9. A system according to claim 8, wherein said one or more store kernels determined by approximating a pixel value distribution within said cells with a uniform distribution of values and solving a thermal diffusion equation.

10. A system according to claim 9, wherein said applying said kernel further comprises grouping cells to minimize a number of calculations required to apply said kernel by varying the size, shape and contiguity of cells.

11. A method, comprising:

determining a set of kernel values by solving a thermal diffusion equation for a plurality of cells of varying size, said cells comprising groupings of pixels assumed to have a uniform distribution of values within said cells;

applying resulting kernel values during writing to a coverage map arranged as said plurality of cells.

12. A method according to claim 11, comprising determining a cell arrangement by defining a number of bands in a beam-scan direction and varying a size of said cells in a stage-scan direction.

13. A method according to claim 12, wherein boundaries of said cells are chosen with reference to a writing point such that said kernel is symmetric and independent of the point of writing.

14. A method according to claim 11, wherein cell are generated from bands in the stage scan direction where the band height in the beam scan direction is scaled by the dimensions of electron diffusion in the substrate material.

15. A method according to claim 11, wherein cells may be comprised of varying numbers of bands in the beam scan direction when the band cells would have a substantially common kernel value.

16. A method according to claim 11, wherein cells may be comprised of groupings of band cells that are non contiguous but which would have a substantially common kernel value.

17. A method according to claim 16, further comprising applying a shifted impulse response unction during said determining.